Hocheon Yoo

Associate Professor of Electronic Engineering

Gachon University

Room 303 Main Library

1342 Seongnam-daero, Seongnam 13120, Korea

E-mail: hyoo@gachon.ac.kr

Website: https://sites.google.com/view/sdclab

Honors

· Gachon Academic Award (Outstanding Research Achievement #1 in Science&Engineering Field), Gachon University (2023)

· Gachon President Award for Research Excellence, Gachon University (2023)

· Innovation Excellence in Teaching Award, Gachon University (2023)

· Gachon Academic Grand Award (Outstanding Research Achievement #1 across all fields), Gachon University (2022)

· Gachon President Award for Research Excellence, Gachon University (2022)

· Researcher of the Month Winner, Gachon University (2021)

· Innovation Excellence in Teaching Award, Gachon University (2021)

· 25th Korean Conference on Semiconductors (KCS) best poster presentation winner, (2018)

· 7th Lam Research Korea Semiconductor Thesis Award Excellence Prize Winner, (2017 )

· Report Award - Identifying and Evaluating Hazards in Research Laboratory, (2017) (by National Research Safety Headquarters)

· 2016 MRS Fall Meeting Best Poster Award Winner, (2016) (by Materials Research Society)

· The Best Student of The Year Award, (2013) (by Hanyang University)

· Korea Semiconductor Fellowship Award Recipient, (2013) (by Korea Semiconductor Industry Association (KISA) / Lam Research Korea)

· Benex Fellowship Award, (2012) (by Sungam Benex Foundation)

Education

Ph.D., Creative IT Engineering, Pohang University of Science and Technology (POSTECH) (Mar 2014 - Aug 2018)

Thesis Adviser: Prof. Jae-Joon Kim

Thesis Title: Split-Gate Ambipolar Thin-Film Transistors

Ambipolar TFTs offer a potentially low-cost and easy-to-manufacture process. Inside a single semiconductor channel in ambipolar TFTs, both hole and electron carriers can be transported, which significantly reduces the complexity of process. However, conventional ambipolar transistors do not have a well-defined off-state and their inverter circuits have a poor noise margin and a high power consumption. In the thesis, I propose new concepts of split-gate ambipolar TFTs to address the issues that conventional ambipolar TFTs have.


B.S., Electronic  Engineering, Hanyang University (2014)

Work experience

Postdoc, The Hersam Research Group, Materials Research Center, Northwestern University, USA (Jan-Oct 2019)

Adviser: Prof. Mark Hersam

I contributed to devices research efforts in the Hersam Research Group. Especially,  I focused on achieving neuromophic devices using transition metal dichalcogenides (TMDs), carbon nanotubes (CNTs), and organic materials. 


Research Intern, Organic and oxide transistors team (TNO), Holst Centre, Netherlands (Jan - Aug 2015)

Mentors: Dr. Jan-Laurens van der Steen, Dr. Edsger Smits, Dr. Albert van Breemen, and Prof. Gerwin Gelinck

Holst Centre develops organic as well as oxide TFT technology compatible with flexible substrates. Main focus of the technology program is to develop TFT technology for flexible circuits and AMOLED display backplanes.

I worked on the project, titled "Split-gate ambipolar thin-film transistors" at Holst Centre. This project focused on the design, fabrication, and experimental investigation of the device physics of split-gate ambipolar field-effect transistors and circuits. The aim was to perform an in-depth characterization of the electrical transport properties of this novel TFT architecture. The project result was published in the journal of Advanced Materials Technologies with title of "Asymmetric Split-Gate Ambipolar Transistor and Its Circuit Application to Complementary Inverter" and the paper was selected as the front cover of the issue.