Ferroelectric materials and devices
Designing Emergent Electronic Phenomena in Atomically-Engineered Materials for Energy-Efficient & Energy-Autonomous Electronics
RESEARCH HIGHLIGHTS
Harnessing Ferroelectronics
Re-imagining electronic materials
Engineering emergent ferroelectric order and negative electronic properties in otherwise ordinary dielectrics
Lab-to-Fab
Samsung Advanced Institute of Technology (SAIT) confirmation of ultrathin ferroelectricity in HZO on Si
Re-imagining the transistor
from high-k dielectric to negative-k ferroelectric gate stacks
for ultralow power transistor operation
Lab-to-Fab
U.S. R&D Foundry confirmation & integration of my NC gate stack into their Defense Foundry transistor technology: IEDM 2022
Samsung Electronics and SAIT confirmation & integration of my NC gate stack into their FinFET technology: Nature Electronics 2023
Intel highlighted my NC technology as a future for energy-efficient computing in their 75th anniversary of the transistor: Science 2022
Re-imagining the capacitor
from electrochemical to electrostatic energy storage
for ultrahigh-density ultrafast-charging capacitors
Lab-to-Fab
U.S. R&D Foundry confirmation & integration of my NC energy storage stack into their 3D trench capacitor process: Nature 2024
The Pentagon invitation to present this energy storage technology to US military decision-makers at the Pentagon DARPA Demo Day 2023
