Sample Recipes & Miscellaneous Notes

Si

Si(111)

Has a 1x1 and 7x7 LEED pattern, but above 830 degs C the 7x7 pattern is lifted and you should only see the 1x1. Si(111) wafers give a good LEED pattern and can be cleaned by simply flashing to ~1100K.

Si(100)

Sonicate in acetone for 5 minutes and then 5 minutes in DI water before loading into the microscope.

Ru

Ru(0001)

Sputter 1kV; 10mA; 5E-6 Torr Ar; 20min. Introduce O2 to 1E-8 Torr and heat to 750C. Remove oxygen and flash to ~1600K for a few seconds.

Pd

Pd(111)

Sputter for 20 minutes at 1kV and 10mA. Anneal in 5E-8 Torr O2 for 5 minutes at 650-700C. Flash to 850-900 C for a few seconds in UHV to remove oxide.

Pd(100)

Sputter for 20 minutes at 1kV and 10mA. Anneal in 5E-8 Torr O2 for 5 minutes at 1000K (825C) on LEEM TC. Flash to 1200K (1000C) on LEEM TC to remove oxide. Deposit Si at 600K (325C) in 1E-6 Torr O2

W

W(100)

Heat in 5E-7 Torr O2 at 1800 C and flashing to over 1800 C in vacuum to remove oxide.

W(112)

Pt

Pt(111)

Heat in 1E-7 Torr oxygen to 1225-1275K for <1 minute. Remove O2 and wait for a few seconds before cooling down. If further cleaning is necessary then sputter with 1kV Ar ions at 5E-6 Torr for 20 minutes.

Pt(100)

Cu

Cu(111)

Cu(100)