<2012

2011

1. Y. Darma, Few Carriers Injection and Local Transport Characteristics of Si Based Quantum Dots Probed by Atomic Force Microscopy, AIP Conference Proceedings. Vol. 1415. No. 1. AIP, 2011.
2. AS Aji, MI Nugraha, Yudhistira, F Rahayu, Y Darma, Simulation of Leakage Current in Si/Ge/Si Quantum Dot Floating Gate MOSFET Using High‐K Material as Tunnel Oxide, AIP Conference Proceedings. Vol. 1415. No. 1. AIP, 2011.
3. MI Nugraha, AS Aji, Yudhistira, F Rahayu, Y Darma, Quantum Size Effect Simulation on the Electronic Characteristic of Silicon Based Single Electron Transistor, AIP Conference Proceedings. Vol. 1415. No. 1. AIP, 2011.
4. F Rahayu, Y Darma, Simulation of spontaneous emission power on silicon based quantum dot with variation of light source and dot size, Instrumentation, Communications, Information Technology, and Biomedical Engineering (ICICI-BME), 2011 2nd International Conference on. IEEE, 2011
5. F Rahayu, Y Darma, Quantum size effect simulation and Ge composition on SiGe quantum dot for intermediate band solar cell applications, Instrumentation, Communications, Information Technology, and Biomedical Engineering (ICICI-BME), 2011 2nd International Conference on. IEEE, 2011.
6. Y Darma, Low Temperature Oxidation by Continuous UV Generated Ozone on Nanometer-thick Amorphous Silicon Surface as Characterized by XPS, Jurnal Matematika dan Sains 16.3 (2011): 153-157

2010

1. FA Noor, Y Darma, M Abdullah, Khairurrijal, The Effect of Electron Incident Angle on Transmittance and Tunneling Current in an Anisotropic Metal‐Oxide‐Semiconductor Capacitor with High‐K Dielectric Gate Stack, AIP Conference Proceedings. Vol. 1325. No. 1. AIP, 2010
2. A Latununuwe, N Hattu, A Setiawan, T Winata, M Abdullah, Y Darma, Transparent Conductive Coating Based on Carbon Nanotubes Using Electric Field Deposition Method, AIP Conference Proceedings. Vol. 1284. No. 1. AIP, 2010.
3. R Widita, R Kurniadi, F Haryanto, Y Darma, YS Perkasa, SS Zasneda, AIRS: The Medical Imaging Software for Segmentation and Registration in SPECT/CT, AIP Conference Proceedings. Vol. 1244. No. 1. AIP, 2010.

2008

1. Y Darma, T Fatirahman, R Kurniadi, Simulation Of Non-Volatile Mos Memory Using Si Quantum Dot With Ge Core As Electronics Storage Node, Solid State Science and Technology 16.1 (2008): 160-167.
2. Y Darma, Photoemission Studies of Si Quantum Dots with Ge Core: Dots formation, Intermixing at Si-clad/Ge-core interface and Quantum Confinement Effect, Journal of Mathematical and Fundamental Sciences 40.1 (2008): 88-96.
3. Y Darma, H Murakami, S Miyazaki, Influence of thermal annealing on compositional mixing and crystallinity of highly selective grown Si dots with Ge core, Applied surface science 224.1 (2004): 156-159.

2004

1. Y Darma, Structural and electrical characterization of self-assembled silicon quantum dots with germanium core, Diss. 広島大学, 2004.
2. Y Darma, H Murakami, S Miyazaki, Influence of thermal annealing on compositional mixing and crystallinity of highly selective grown Si dots with Ge core, Applied surface science 224.1 (2004): 156-159.
3. Y Darma, S Miyazaki, Characterization of electronic transport through Si dot with Ge core using AFM conducting probe, Microprocesses and Nanotechnology Conference, 2003. Digest of Papers. 2003 International. IEEE, 2003.
4. Y. Darma, Ge コア Si ナノメートルドットの熱的安定性: ラマン散乱分光及び光電子分光分析 (AWAD2003: 先端デバイスの基礎と応用に関するアジアワークショツプ), 電子情報通信学会技術研究報告. SDM, シリコン材料・デバイス 103.164 (2003): 13-17.
5. Y Darma, H Murakami, S Miyazaki, Formation of nanometer silicon dots with germanium core by highly-selective low-pressure chemical vapor deposition, Japanese journal of applied physics 42.6S (2003): 4129.
6. Y Darma, R Takaoka, H Murakami, S Miyazaki, Self-assembling formation of silicon quantum dots with a germanium core by low-pressure chemical vapour deposition, Nanotechnology 14.4 (2003): 413.