The key feature of the modern electronics is the continuing miniaturization of the transistor size. Does the existing knowledge of electronic properties (current flow, electrical resistance, electrostatics of the nano-contacts of the source, drain and gate electrodes in a transistor) applicable to these nano (quantum) devices or we have to develop something new? In this course, we will discuss what really happens to the electronic properties of a transistor if the channel length goes down to 1nm. The students will learn in this course, the new understanding of the electronic properties (current flow, electrical resistance, density of states, contact resistance of the electrodes etc.) of the devices when the channel length of a transistor becomes really few atoms or molecules and how to reach the bulk electronic properties starting from small one (bottom-up approach).
The first part of this course will provide the transport properties both electronic and spintronic in the bulk solids with an overview of basic understanding of solid state Physics. In the second part it will show what really happens to the transport phenomena if the channel length of a transistor goes down to 1nm or less. It will also be discussed whether it is possible to reach the quantum regime (quantum transport) starting from the classical transport theory (top down approach) or vice versa (bottom up approach). At the end, this course will provide a complete understanding of the transport phenomena starting from atoms to transistor.