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PM50502C 2MOS: 50A500V; PM50502C

Hitachi PM50502C New 2MOS: 50A500V, PM50502C pictures, PM50502C price, PM50502C supplier

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PM50502C Description

Silicon N-Channel power MOSFET module. High speed power switching, 50 A, 500 V.

PM50502C 0.65 lbs

PM50502C could be used in Inverters, Converters, DC choppers, Induction heating, DC to DC converters.

. Equipped with Power MOS FET

. Low On-Resistance

. High Speed Switching

. Low Drive Current

. Wide Area of Safe Operation

. Inherent Parallel Diod between Source and Drain

.Isolated Base from Terminal

. Suitable for Motor Driver, Switching Regulator and etc.

Maximum ratings and characteristics

.Absolute maximum ratings (Tc=25°C unless without specified)

Collector-Emitter voltage Vces:500V

Gate-Emitter voltage VGES:±20V

Collector current Ic:50A

Collector current Icp:100A

Collector power dissipation Pc:300W

Collector-Emitter voltage VCES:2000V

Operating junction temperature Tj:+150°C

Storage temperature Tstg :-40 to +125°C