Fabrication of different resistive switching devices by using DC/Pulsed DC/RF sputtering systems.
Fabrication and analysis of Threshold resistive switching devices (Volatile) using amorphous Barium titanate (BTO) thin film in Ag, Ti, Cu, Co/am-BTO/Ag cross point geometries.
Understanding of threshold resistive switching property which is mediated by oxygen vacancies in light with X-ray photon spectroscopy.
Fabrication and analysis of Bipolar resistive switching devices (Non-volatile) amorphous Barium titanate (BTO) thin film in Ag/am-BTO/ITO and Ag/am-BTO/FTO dot point geometries
Analysis of bipolar assisted ferroelectric resistive switching in Ti/am-BTO/ITO dot point geometries.
Understanding of ferroelectric (behavior) switching in Ag|am-BTO|Ag in a novel parallel electrode geometry by using a 100 µm thick copper wire as mask.