Japan GaN Power Discrete Device Market was valued at USD 0.15 Billion in 2022 and is projected to reach USD 0.90 Billion by 2030, growing at a CAGR of 24.6% from 2024 to 2030.
Japan's Gallium Nitride (GaN) power discrete device market is experiencing remarkable growth, driven by the material's superior properties over traditional silicon-based semiconductors. GaN devices offer higher efficiency, faster switching speeds, and the ability to operate under higher voltages and temperatures, making them highly sought after in various industries.
Recent reports indicate that the Japanese GaN power devices market has been growing at a compound annual growth rate (CAGR) of 17.8% from 2012 to 2016, with projections suggesting an acceleration to a 23.1% CAGR from 2017 to 2027. This growth trajectory is expected to propel the market value from over US$100 million in 2017 to more than US$800 million by 2027, creating an incremental opportunity exceeding US$700 million during this period.
The surge in demand for GaN power discrete devices is particularly notable in the following sectors:
Consumer Electronics: The push for more compact and efficient devices has led manufacturers to adopt GaN technology, enabling smaller chargers and power adapters that deliver higher performance.
Telecommunications: With the rollout of 5G networks, GaN devices are essential due to their high-frequency performance and efficiency, supporting faster data transmission and improved network reliability.
Automotive: The electric vehicle (EV) industry benefits from GaN's efficiency in power conversion, leading to reduced energy losses during battery charging and discharging. This efficiency contributes to longer driving ranges and faster charging times for EVs.
Industrial and Renewable Energy: GaN devices are utilized in industrial power supplies and renewable energy systems, such as solar inverters, where efficient power conversion is crucial for maximizing energy output and reducing operational costs.
In my experience working with semiconductor technologies, the transition from silicon to GaN has been transformative. A notable example is Infineon's recent achievement in producing GaN chips on 300mm wafers, a world-first that significantly reduces production costs by yielding 2.3 times more chips per wafer compared to the traditional 200mm wafers. This advancement not only makes GaN devices more cost-competitive but also accelerates their adoption across various applications.
Moreover, the global GaN power devices market is projected to grow at an impressive CAGR of 57.4% from 2022 to 2030, driven by the increasing adoption of GaN in commercial radio-frequency applications, electric vehicles, and wireless charging systems. This global trend underscores the importance for Japanese manufacturers to align with industry requirements and standards to maintain competitiveness.
Key industry requirements for GaN power discrete devices include:
High Efficiency and Reliability: Industries demand devices that offer superior efficiency to reduce energy consumption and enhance system performance. Reliability under various operating conditions is also paramount.
Cost-Effectiveness: As production technologies advance, reducing manufacturing costs is essential to make GaN devices more accessible and appealing to a broader market.
Scalability: The ability to produce GaN devices at scale without compromising quality is crucial to meet the growing demand across different sectors.
Compliance with Standards: Adherence to international and industry-specific standards ensures compatibility and safety, facilitating smoother integration into existing systems.
In conclusion, Japan's GaN power discrete device market is poised for substantial growth, driven by the material's inherent advantages and the increasing demand across multiple industries. By focusing on efficiency, cost reduction, scalability, and compliance, Japanese manufacturers can capitalize on this trend, solidifying their position in the global market.
Get an In-Depth Research Analysis of the Japan GaN Power Discrete Device Market Size And Forecast [2025-2032]
Efficient Power Conversion Corporation
NXP Semiconductors N.V.
GaN Systems Inc Texas Instruments
Infineon Technologies AG
Fujitsu Limited
Transphorm Inc Cree Incrporated
OSRAM Opto Semiconductors
Qorvo
By the year 2030, the scale for growth in the market research industry is reported to be above 120 billion which further indicates its projected compound annual growth rate (CAGR), of more than 5.8% from 2023 to 2030. There have also been disruptions in the industry due to advancements in machine learning, artificial intelligence and data analytics There is predictive analysis and real time information about consumers which such technologies provide to the companies enabling them to make better and precise decisions. The Asia-Pacific region is expected to be a key driver of growth, accounting for more than 35% of total revenue growth. In addition, new innovative techniques such as mobile surveys, social listening, and online panels, which emphasize speed, precision, and customization, are also transforming this particular sector.
Get Discount On The Purchase of the Japan GaN Power Discrete Device Market Size And Forecast [2025-2032]
Growing demand for below applications around the world has had a direct impact on the growth of the Japan GaN Power Discrete Device Market
Transistors
Diodes
Integrated Circuits (ICs)
Hybrid Devices
Consumer Electronics
Telecommunications
Automotive
Industrial
Renewable Energy
Data Centers
Telecom Infrastructure
Aerospace and Defense
IT and Cloud Services
Low Voltage (<200V)
Medium Voltage (200V - 600V)
High Voltage (>600V)
Surface Mount Devices (SMD)
Through-Hole Devices
Chip-on-Board (COB)
Discrete Packages
Asia-Pacific (China, Japan, Korea, India, Australia, Indonesia, Thailand, Philippines, Malaysia and Vietnam)
For More Information or Query, Visit @ Japan GaN Power Discrete Device Market Research Analysis
1. Introduction of the Japan GaN Power Discrete Device Market
Overview of the Market
Scope of Report
Assumptions
2. Executive Summary
3. Research Methodology of Verified Market Reports
Data Mining
Validation
Primary Interviews
List of Data Sources
4. Japan GaN Power Discrete Device Market Outlook
Overview
Market Dynamics
Drivers
Restraints
Opportunities
Porters Five Force Model
Value Chain Analysis
5. Japan GaN Power Discrete Device Market, By Type
6. Japan GaN Power Discrete Device Market, By Application
7. Japan GaN Power Discrete Device Market, By Geography
Asia-Pacific
China
Japan
Korea
India
Australia
Indonesia
Thailand
Philippines
Malaysia and Vietnam
8. Japan GaN Power Discrete Device Market Competitive Landscape
Overview
Company Market Ranking
Key Development Strategies
9. Company Profiles
10. Appendix
About Us: Verified Market Reports
Verified Market Reports is a leading Research and Consulting firm servicing over 5000+ clients. We provide advanced analytical research solutions while offering information-enriched research studies. We also offer insights into strategic and growth analyses and data necessary to achieve corporate goals and critical revenue decisions.
Our 250 Analysts and SMEs offer a high level of expertise in data collection and governance using industrial techniques to collect and analyze data on more than 25,000 high-impact and niche markets. Our analysts are trained to combine modern data collection techniques, superior research methodology, expertise, and years of collective experience to produce informative and accurate research.
Contact us:
Mr. Edwyne Fernandes
US: +1 (650)-781-4080
US Toll-Free: +1 (800)-782-1768
Website: https://www.verifiedmarketreports.com/