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Journals (Main Author)

[11] Yeong Kwon Kim†, Sangyong Park†, Junhwan Choi, Hamin Park*, and Byung Chul Jang*, "Low-Power Charge Trap Flash Memory with MoS2 Channel for High-Density In-Memory Computing" Advanced Functional Materials, 2405670 (2024)

[10] Hyunjin Kim, Beom Jung Kim, Jungyeop Oh, Sung-Yool Choi, and Hamin Park*, "Bi-directional threshold voltage shift of amorphous InGaZnO thin film transistors under alternating bias stress" Semiconductor Science and Technology 39, 025011 (2024)

[9] Yonghee Jeong, Hyunjin Kim, Jungyeop Oh, Sung-Yool Choi, and Hamin Park*, "Bias Temperature Instability of a-IGZO TFTs under Repeated Stress and Recovery" Journal of Electronic Materials 52, 3914 (2023)

[8] Juwon Kim, Hyunjin Kim, Jungyeop Oh, Sung-Yool Choi, and Hamin Park*, "Turn-around of threshold voltage shift in amorphous InGaZnO TFT under positive bias illumination stress", Solid-State Electronics 201, 108605 (2023)

[7] Byung Chul Jang and Hamin Park*, "Non-volatile flash memory based on van der Waals gate stack using bandgap tunability of hexagonal boron nitride", Surfaces and Interfaces 32, 102179 (2022)

[6] Hamin Park†, Dong Sik Oh†, Woonggi Hong†, Juyeon Kang, Geon-Beom Lee, Gwang Hyuk Shin, Yang-Kyu Choi, Sung Gap Im, and Sung-Yool Choi*, "Hybrid Gate Dielectric of MoS2 Transistors for Enhanced Photo-Electronic Stability", Advanced Materials Interfaces 8, 2100599 (2021)

[5] Hamin Park, Gwang Hyuk Shin, Khang June Lee, and Sung-Yool Choi*, “Probing Temperature-Dependent Interlayer Coupling in a MoS2/h-BN Heterostructure” Nano Research 13, 576-582 (2020)

[4] Hamin Park, Dong Sik Oh, Khang June Lee, Dae Yool Jung, Seunghee Lee, Seunghyup Yoo, and Sung-Yool Choi*, “Flexible and Transparent Thin-Film Transistors Based on Two-Dimensional Materials for Active-Matrix Display” ACS Applied Materials & Interfaces 12, 4749-4754 (2020)

[3] Hamin Park, Gwang Hyuk Shin, Khang June Lee, and Sung-Yool Choi*, “Atomic-scale etching of hexagonal boron nitride for device integration based on two-dimensional materials” Nanoscale 10, 15205-15212 (2018)

[2] Hamin Park, Tae Keun Kim, Sung Woo Cho, Hong Seok Jang, Sang Ick Lee, and Sung-Yool Choi*, “Large-scale synthesis of uniform hexagonal boron nitride films by plasma-enhanced atomic layer deposition” Scientific Reports 7, 40091 (2017)

[1] Hamin Park, Ick-Joon Park, Dae Yool Jung, Khang June Lee, Sang Yoon Yang, and Sung-Yool Choi*, “Polymer-free graphene transfer for enhanced reliability of graphene field-effect transistors” 2D Materials 3, 021003 (2016)

Journals

[32] Yeong Kwon Kim†, Sangyong Park†, Junhwan Choi, Hamin Park*, and Byung Chul Jang*, "Low-Power Charge Trap Flash Memory with MoS2 Channel for High-Density In-Memory Computing", Advanced Functional Materials, 2405670 (2024)

[31] Hyunjin Kim, Beom Jung Kim, Jungyeop Oh, Sung-Yool Choi, and Hamin Park*, "Bi-directional threshold voltage shift of amorphous InGaZnO thin film transistors under alternating bias stress" Semiconductor Science and Technology 39, 025011 (2024)

[30] Hamin Park and Dong Chan Kim*, "Structural and Material-Based Approaches for the Fabrication of Stretchable Light-Emitting Diodes" Micromachines 15, 66 (2024)

[29] Dong-Gyun Mah, Hamin Park, and Won-Ju Cho*, "Synaptic Plasticity Modulation of Neuromorphic Transistors through Phosphorus Concentration in Phosphosilicate Glass Electrolyte Gate" Nanomaterials 14, 203 (2024)

[28] Dong-Hee Lee, Hamin Park, and Won-Ju Cho*, "Nanowire-Enhanced Fully Transparent and Flexible Indium Gallium Zinc Oxide Transistors with Chitosan Hydrogel Gate Dielectric: A Pathway to Improved Synaptic Properties" Gels 9, 931 (2023)

[27] Hwi-Su Kim, Hamin Park, and Won-Ju Cho*, "Light-Stimulated IGZO Transistors with Tunable Synaptic Plasticity Based on Casein Electrolyte Electric Double Layer for Neuromorphic Systems" Biomimetics 8, 532 (2023)

[26] Dong-Hee Lee, Hamin Park, and Won-Ju Cho*, "Advancements in Complementary Metal-Oxide Semiconductor-Compatible Tunnel Barrier Engineered Charge-Trapping Synaptic Transistors for Bio-Inspired Neural Networks in Harsh Environments" Biomimetics 8, 506 (2023)

[25] Dong-Hee Lee, Hwi-Su Kim, Ki-Woong Park, Hamin Park, and Won-Ju Cho*, "Enhanced Synaptic Behaviors in Chitosan Electrolyte-Based Electric-Double-Layer Transistors with Poly-Si Nanowire Channel Structures" Biomimetics 8, 432 (2023)

[24] Dong-Hee Lee, Hamin Park, and Won-Ju Cho*, "Implementation of Highly Stable Memristive Characteristics in an Organic–Inorganic Hybrid Resistive Switching Layer of Chitosan-Titanium Oxide with Microwave-Assisted Oxidation" Molecules 28, 5174 (2023)

[23] Yonghee Jeong, Hyunjin Kim, Jungyeop Oh, Sung-Yool Choi, and Hamin Park*, "Bias Temperature Instability of a-IGZO TFTs under Repeated Stress and Recovery" Journal of Electronic Materials 52, 3914 (2023)

[22] Juwon Kim, Hyunjin Kim, Jungyeop Oh, Sung-Yool Choi, and Hamin Park*, "Turn-around of threshold voltage shift in amorphous InGaZnO TFT under positive bias illumination stress", Solid-State Electronics 201, 108605 (2023)

[21] Dong-Hee Lee, Hamin Park, and Won-Ju Cho*, "Synaptic Transistors Based on PVA: Chitosan Biopolymer Blended Electric-Double-Layer with High Ionic Conductivity", Polymers 15, 896 (2023)

[20] Hwi-Su Kim, Hamin Park, and Won-Ju Cho*, "Enhanced Synaptic Properties in Biocompatible Casein Electrolyte via Microwave-Assisted Efficient Solution Synthesis", Polymers 15, 293 (2023)

[19] Hyun-Sik Choi, Young-Jun Lee, Hamin Park, and Won-Ju Cho*, "Biocompatible Potato-Starch Electrolyte-Based Coplanar Gate-Type Artificial Synaptic Transistors on Paper Substrates", International Journal of Molecular Sciences 23, 15901 (2022)

[18] Jin-Gi Min, Hamin Park, and Won-Ju Cho*, "Milk–Ta2O5 Hybrid Memristors with Crossbar Array Structure for Bio-Organic Neuromorphic Chip Applications", Nanomaterials 12, 2978 (2022)

[17] Hwi-Su Kim, Hamin Park, and Won-Ju Cho*, "Biocompatible Casein Electrolyte-Based Electric-Double-Layer for Artificial Synaptic Transistors", Nanomaterials 12, 2596 (2022)

[16] Byung Chul Jang and Hamin Park*, "Non-volatile flash memory based on van der Waals gate stack using bandgap tunability of hexagonal boron nitride", Surfaces and Interfaces 32, 102179 (2022)

[15] Jun-Hwe Cha†, Byung Chul Jang†, Jungyeop Oh, Changhyeon Lee, Sang Yoon Yang, Hamin Park, Sung Gap Im, and Sung-Yool Choi*, "Highly reliable synaptic cell array based on organic-inorganic hybrid bilayer stack toward precise offline learning", Advanced Intelligent Systems 4, 2200018 (2022)

[14] Hamin Park†, Dong Sik Oh†, Woonggi Hong†, Juyeon Kang, Geon-Beom Lee, Gwang Hyuk Shin, Yang-Kyu Choi, Sung Gap Im, and Sung-Yool Choi*, "Hybrid Gate Dielectric of MoS2 Transistors for Enhanced Photo-Electronic Stability", Advanced Materials Interfaces 8, 2100599 (2021)

[13] Ho Jin Kim†, Khang June Lee†, Junghoon Park†, Gwang Hyuk Shin, Hamin Park, Kyoungsik Yu*, and Sung-Yool Choi*, “Photoconductivity Switching in MoTe2/Graphene Heterostructure by Trap-Assisted Photogating”, ACS Applied Materials & Interfaces 12, 38563-38569 (2020)

[12] Hamin Park, Gwang Hyuk Shin, Khang June Lee, and Sung-Yool Choi*, “Probing Temperature-Dependent Interlayer Coupling in a MoS2/h-BN Heterostructure” Nano Research 13, 576-582 (2020)

[11] Hamin Park, Dong Sik Oh, Khang June Lee, Dae Yool Jung, Seunghee Lee, Seunghyup Yoo, and Sung-Yool Choi*, “Flexible and Transparent Thin-Film Transistors Based on Two-Dimensional Materials for Active-Matrix Display” ACS Applied Materials & Interfaces 12, 4749-4754 (2020)

[10] Khang June Lee†, Shinho Kim†, Woonggi Hong, Hamin Park, Min Seok Jang, Kyoungsik Yu,* and Sung-Yool Choi*, “Observation of Wavelength-Dependent Quantum Plasmon Tunneling with Varying the Thickness of Graphene Spacer” Scientific Reports 9, 1199 (2019)

[9] Gwang Hyuk Shin, Bondae Koo, Hamin Park, Youngjun Woo, Jae Eun Lee, and Sung-Yool Choi*, “Vertical-Tunnel Field-Effect Transistor based on Silicon-MoS2 3D-2D Heterostructure” ACS Applied Materials & Interfaces 10, 40212-40218 (2018)

[8] Bondae Koo†, Gwang Hyuk Shin†, Hamin Park, Hojin Kim, and Sung-Yool Choi*, “Vertical-tunneling field-effect transistor based on MoTe2/MoS2 2D-2D heterojunction” Journal of Physics D: Applied Physics 51, 475101 (2018)

[7] Hamin Park, Gwang Hyuk Shin, Khang June Lee, and Sung-Yool Choi*, “Atomic-scale etching of hexagonal boron nitride for device integration based on two-dimensional materials” Nanoscale 10, 15205-15212 (2018)

[6] Gyeong Sook Bang, Gi Woong Shim, Gwang Hyuk Shin, Dae Yool Jung, Hamin Park, Won G. Hong, Jinseong Choi, Jaeseung Lee, and Sung-Yool Choi*, “Pyridinic-N-doped Graphene Paper from Perforated Graphene Oxide for Efficient Oxygen Reduction” ACS Omega 3, 5522 (2018)

[5] Hamin Park, Tae Keun Kim, Sung Woo Cho, Hong Seok Jang, Sang Ick Lee, and Sung-Yool Choi*, “Large-scale synthesis of uniform hexagonal boron nitride films by plasma-enhanced atomic layer deposition” Scientific Reports 7, 40091 (2017)

[4] Khang June Lee†, Daewon Kim†, Byung Chul Jang, Da-Jin Kim, Hamin Park, Dae Yool Jung, Woonggi Hong, Tae Keun Kim, Yang-Kyu Choi*, and Sung-Yool Choi*, “Multilayer graphene with a rippled structure as a spacer for improving plasmonic coupling” Advanced Functional Materials 26, 5093-5101 (2016)

[3] Hamin Park, Ick-Joon Park, Dae Yool Jung, Khang June Lee, Sang Yoon Yang, and Sung-Yool Choi*, “Polymer-free graphene transfer for enhanced reliability of graphene field-effect transistors” 2D Materials 3, 021003 (2016)

[2] Choong-Ki Kim†, Chan Hak Yu†, Jae Hur, Hagyoul Bae, Seung-Bae Jeon, Hamin Park, Yong Min Kim, Kyung Cheol Choi, Yang-Kyu Choi*, and Sung-Yool Choi*, “Abnormal electrical characteristics of multi-layered MoS2 FETs attributed to bulk traps” 2D Materials 3, 015007 (2016)

[1] Dae Yool Jung, Sang Yoon Yang, Hamin Park, Woo Cheol Shin, Joong Gun Oh, Byung Jin Cho, and Sung-Yool Choi*, “Interface engineering for high performance graphene electronic devices” Nano Convergence 2, 1 (2015)

Conferences

[24] Sungbin Lim, Dong-Gyun Mah, Won-Ju Cho, and Hamin Park "Analysis of Fermi Level Pinning of Metal-InGaZnO Junction with Interfacial Self-Assembled Monolayer" 제31회 한국반도체학술대회, Jan. 24 (2024)

[23] Yerim Lee, Tae-Gyu Hwang, Won-Ju Cho, and Hamin Park "Thermal Annealing of Solution-Processed p-type NiO Thin-Film Transistors" 제31회 한국반도체학술대회, Jan. 24 (2024)

[22] Hyunseok Son, Beomhee Yoon, Hyunho Lee, and Hamin Park "Supercycle of AlO and HfO using Atomic Layer Deposition for Nanolaminate Capacitor" 제31회 한국반도체학술대회, Jan. 24 (2024)

[21] Juwon Kim, Hyun-Sik Choi, Won-Ju Cho, and Hamin Park "Performance Improvement of Indium Oxide TFTs with Tungsten Doping" 제31회 한국반도체학술대회, Jan. 24 (2024)

[20] 강지훈, 김현곤, 박하민 "Gate-All-Around FET Inner Spacer 두께에 따른 Parasitic Capacitance 모델링" 대한전자공학회 2023년도 추계학술대회, Nov. 24 (2023) [Oral Presentation]

[19] 편상일, 박성민, 정대웅, 옥희성, 박하민 "전압 및 광 스트레스에 따른 a-IGZO 소자의 문턱전압 신뢰성 및 hump 효과 분석" 대한전자공학회 2023년도 추계학술대회, Nov. 24 (2023)

[18] 조승준, 이도현, 박하민 "Punch-Through Path 제어 기반의 1T-DRAM 소자" 대한전자공학회 2023년도 추계학술대회, Nov. 24 (2023)

[17] 정장호, 박하민 "1T-DRAM 동작을 위한 Impact-Ionization MOS 연구" 대한전자공학회 2023년도 추계학술대회, Nov. 24 (2023)

[16] Hamin Park "Device Architecture for High-Density NAND Flash Memory" 대한전자공학회 SoC 학술대회, May. 13 (2023) [Oral Presentation]

[15] Hyunjin Kim, Beom Jung Kim, Jungyeop Oh, Sung-Yool Choi, and Hamin Park "Ionized Oxygen Vacancies in Amorphous InGaZnO Thin Film Transistors under Cross-applied Bias Stress" 제30회 한국반도체학술대회, Feb. 15 (2023)

[14] Hamin Park, "Reliability of field-effect transistors" 10th SK Hynix Conference, Oct. 28 (2022) [Oral Presentation]

[13] Hamin Park, Dong Sik Oh, Khang June Lee, Dae Yool Jung, Seunghee Lee, Seunghyup Yoo, and Sung-Yool Choi, "Flexible and Transparent 2D TFTs for Active-Matrix Display" 2021 KOREA-CHINA Joint Seminar, Online, Jul. 1 (2021) [Oral Presentation]

[12] Hamin Park, Dong Sik Oh, Khang June Lee, Dae Yool Jung, Seunghee Lee, Seunghyup Yoo, and Sung-Yool Choi, “Flexible 2D FETs for active-matrix display application” 3rd International Workshop on 2D Materials, Seoul, Korea, Jul. 1 (2019)

[11] Hamin Park, and Sung-Yool Choi, “Temperature-dependent phonon vibration and excitonic transition in a van der Waals heterostructure” 2nd International Workshop on 2D Materials, Nanjing, China, Feb. 21 (2019)

[10] Hamin Park, and Sung-Yool Choi, “High-quality synthesis of 2D materials and integration into electronic devices” 1st International Workshop on 2D Materials, Tokyo, Japan, Nov. 16 (2018)

[9] Hamin Park, and Sung-Yool Choi, “Interlayer interaction in a van der Waals heterostructure of transition metal dichalcogenide and hexagonal boron nitride” RPGR 2018, Guilin, China, Oct. 23 (2018) [Oral Presentation]

[8] Hamin Park, Gwang Hyuk Shin, Khang June Lee, and Sung-Yool Choi, “Ar plasma etching of hexagonal boron nitride films” ICAMD 2017, Jeju, Korea, Dec. 06 (2017)

[7] Hamin Park, Khang June Lee, Jae Eun Lee, and Sung-Yool Choi, “Atomic scale etching of hexagonal boron nitride for two-dimensional integrated circuits” Nano Korea 2017, Ilsan, Korea, Jul. 13 (2017) [Oral Presentation]

[6] Hamin Park, Tae Keun Kim, Sung Woo Cho, Hong Seok Jang, Sang Ick Lee, and Sung-Yool Choi, “Plasma-enhanced atomic layer deposition of uniform hexagonal boron nitride films.” MRS 2017 Spring, Phoenix, USA, April 20 (2017) [Oral Presentation]

[5] Hamin Park, Sang Yoon Yang, Dae Yool Jung, Ick-Joon Park, and Sung-Yool Choi, “Interface Engineering for High Performance Graphene Devices” 2017 SNU Winter Workshop on 2D Materials, Seoul, Korea, Feb. 09 (2017)

[4] Hamin Park, Tae Keun Kim, Seung-Bum Seo, Gi Woong Shim, and Sung-Yool Choi, “Surface passivation effect on the bias-stress-induced instability of CVD-grown molybdenum disulfide transistor.” Graphene 2016, Genova, Italy, April 19 (2016)

[3] Hamin Park, Ick-Joon Park, Young-Wook Ha, and Sung-Yool Choi, “Bias stress effect in graphene field-effect transistors based on passivation layer.” Nano Korea 2015, Seoul, Korea, Jul. 03, (2015)

[2] Hamin Park, Ick-Joon Park, Young-Wook Ha, and Sung-Yool Choi, “Bottom-gate graphene field-effect transistors with enhanced reliability based on passivation layer” Graphene 2015, Bilbao, Spain, July 03 (2015)

[1] Hamin Park, Ick-Joon Park, and Sung-Yool Choi, “Investigation of bias-stress-induced instability in graphene field-effect transistor using new polymer-free transfer method” ICEIC 2015, Singapore, Jan. 29 (2015)