Research Interest
The number of Journals : #444
High-Pressure Deuterium Annealing Effect on HfO2-based Gate-All-Around Ferroelectric FET
Min-Jae Choi, Ju-Won Yeon, Ji-Man Yu, Myungsoo Seo, Min-Ho Kang, Sheung Hun Kim, Byung Jin Cho, Jun-Young Park and Yang-Kyu Choi
IEEE Electron Device Letters
Janus Behavior of Stochastic and Deterministic Operation in a MOSFET
Sang-Won Lee, Ho-Young Maeng, Seung-Il Kim and Yang-Kyu Choi
IEEE Electron Device Letters
Oscillatory Neural Network with High-Order Sub-Harmonic Injection Locking
Ye-Seong Chung, Seong-Yun Yun, Sang-Won Lee, Jun-Hyoung Park, Ho-Young Maeng, and Yang-Kyu Choi
ACS Applied Materials & Interfaces
Scalable Ising machine composed entirely of Si transistors
Seong-Yun Yun†, Joon Pyo Kim†, Jaeyong Jeong, Sang-Won Lee, Ye-Seong Chung, Sanghyeon Kim, and Yang-Kyu Choi
Science Advances