Low Temperature Graphene Growth via CVD

The biggest problem with contemporary production technique of single crystal graphene is that it requires extreme temperature of more than 1000 degrees Celsius. 

Recently our lab has discovered process for low temperature growth of graphene by optimizing MOCVD technology. Benzene is found to be a useful carbon precursor thanks to its low activation energy.  Also copper foil has been used as substrate because of its low carbon solubility, making it easier to control the number of layers.  

For the expansion of our RT graphene synthesis research, follow-up research has been configured as follows:

• RT-grown doped graphene

• RT-grown graphene through different carbon precursors.

Moreover, even further research for various applications is planned, including FET, gas sensors, catalysts. 

This low temperature nature of our research is profitable for future applications such as flexible devices, biotechnology, electronics, LEDs and storage devices.

Related Articles

• B. J. Kim#, S. Chae#, S. H. Lee, J. -Y. Moon, S. Oh, B. J. Jeong, K. H. Choi, S. -I. Kim, H. -W. Kim, J. Lee, J. Huh, J. R. Ahn, D. Whang, H. K. Yu, J. -H. Lee, and J. -Y. Choi, "Room temperature growth of single-crystalline monolayer graphene on Cu foil",  Nature Nanotechnology, Under review (2022).