Semiconductor Devices & Photo Sensors

We made electronic device of 1D materials using mechanical exfoliation process and dispersed solution coating method. Our recent studies are focused on ternary transition metal chalcogenides M2X3Y8 (M= Ta, Nb; X= Ni, Pd, Pt; Y= S, Se) and Te nanowires which shows semiconducting behavior.

We demonstrated its property by making simple three-terminal gated device structure through typical photolithography and shadow mask method. In terms of the semiconducting materials, transport measurement at room temperature revealed that the materials show high performance such as high electron mobility and Ion/Ioff ratio in various types of semiconductors, for example, n, p, and ambipolar behavior.

Based on these characteristics, the obtained 1D vdW materials are expected to be a competitive candidate as channel materials. Furthermore, these study not only provide basic information on 1-diemnsional material device fabrication but also expand the potential of 1D-based semiconductor devices in further electronic application.

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• K. H. Choi#, B. J. Jeong#, J. Jeon, Y. K. Chung, D. Sung, S. O. Yoon, S. Chae, B. J. Kim, S. Oh, S. H. Lee, C. Woo, X. Dong, A. Ghulam, J. Ali, T. Y. Kim, M. Seo, J. -H. Lee, J. Huh, H. K. Yu*, and J. -Y. Choi*, "Ta2Ni3Se8: One-dimensional van der Waals Material with ambipolar behavior", Small, vol.17, 2102602 (2021) doi.org/10.1002/smll.202102602

• B. J. Jeong#, K. H. Choi#, J. Jeon, S. O. Yoon, Y. K. Chung, D. Sung S. Chae, B. J. Kim, S. Oh, S. H. Lee, C. Woo, T. Y. Kim, J. Ahn, J. -H. Lee, J. Huh, H. K. Yu*, and J. -Y. Choi*, "Ternary Transition Metal Chalcogenide Nb2Pd3Se8: 1-Dimensional van der Waals materials for a High-Performance Field-Effect Transistor", Advanced Functional Materials, vol.32, 2108104 (2022) doi.org/10.1002/adfm.202108104