Authors / Journal
Keun Soo Kim, Yue Zhao, Houk Jan2, Sang Yoon Lee, Jong Min Kim, Kwang S. Kim, Jong-Hyun Ahn, Philip Kim, Jae-Young Choi & Byung Hee Hong
Nature / 2009 / vol.457, iss7719, p706
Abstract
Problems associated with large-scale pattern growth of graphene constitute one of the main obstacles to using this material in device applications. Recently, macroscopic-scale graphene films were prepared by two-dimensional assembly of graphene sheets chemically derived from graphite crystals and graphene oxides. However, the sheet resistance of these films was found to be much larger than theoretically expected values. Here we report the direct synthesis of large-scale graphene films using chemical vapor deposition on thin nickel layers, and present two different methods of patterning the films and transferring them to arbitrary substrates. The transferred graphene films show very low sheet resistance of 280Vpersquare,with 80percentopticaltransparency. At low temperatures, the monolayers transferred to silicon dioxide substrates show electron mobility greater than 3,700cm2V21s21 and exhibit the half-integer quantum Hall effect, implying that the quality of graphene grown by chemical vapor deposition is as highasmechanicallycleavedgraphene6.Employingtheoutstanding mechanical properties of graphene, we also demonstrate the macroscopic use of these highly conducting and transparent electrodes in flexible, stretchable, foldable electronics.