Research

Our main research interest is to conduct basic and applied research at the frontier of nanomaterials, logic and memory devices, neuromorphic applications, flexible nanoelectronics, bioelectronics, RF integrated circuits, and electromagnetics. Our passion lies in discovering, understanding, and applying new paradigms to enable novel ubiquitous systems that can address societal needs. 


My M.S./Ph.D. research focused on exploring novel two-dimensional (2D) atomically thin semiconductors, such as the Transition Metal Dichalcogenides (TMDs) and hexagonal Boron Nitride (hBN), for their application in memory and high-frequency RF switches. I published my work as a first author in Nature Communications, Nature Electronics, two IEDM (International Electron Device Meeting) conferences, and etc.


Nature Electronics: hBN switches for 5G & THz. On TV

A single atomically-thin layer of hexagonal boron nitride shows that thinner is better with regards to radio-frequency switching applications. This work is now published and is based on our earlier discovery of atomristors. 

Title: Analog switches made from boron nitride monolayers for application in 5G and terahertz communication systems. Nature Electronics May 2020. 

A blog post in Nature can be read here.

News Media coverage:

Live TV interview on the public importance

Public Radio interview and Texas Standard transcript

NPR on KUT 

IEEE Spectrum News

UT-Austin Press Release

UK Daily Mail

PhysicsWorld

Army Press Release

Federal News Network

Nature News

Yahoo 

Redditt Commentary