Non-universal localization transition in the quantum Hall effect probed through broken-symmetry states of graphene
A. Zhang, T. Röper, Manjari Garg, K. Watanabe, T. Taniguchi, C. Altimiras, P. Roche, E. Bocquillon, O. Maillet and F. D. Parmentier
Enhanced shot noise in graphene quantum point contacts with electrostatic reconstruction
Manjari Garg*, O. Maillet*, N. L. Samuelson, T. Wang, J. Feng, L. A. Cohen, K. Watanabe, T. Taniguchi, P. Roulleau, M. Sassetti, M. Zaletel, A. F. Young, D. Ferraro, P. Roche and F. D. Parmentier
(*Equal Contribution)
Vanishing bulk heat flow in the ν = 0 quantum Hall ferromagnet in monolayer graphene
R. Delagrange*, Manjari Garg*, G. Le Breton, A. Zhang, Q. Dong, Y. Jin, K. Watanabe, T. Taniguchi, P. Roulleau, O. Maillet, P. Roche, and F.D. Parmentier
(*Equal Contribution)
Nature Physics, 20, 1927 (2024).
Non-Boltzmann thermoelectric transport in minimally twisted bilayer graphene
B. Ghawri*, P. S. Mahapatra*, Manjari Garg*, S. Mandal, A. Jayaraman, K. Watanabe, T. Taniguchi, M. Jain, U. Chandni, and A. Ghosh
(*Equal Contribution)
Physical Review B, 109, 045436 (2024).
Heat equilibration of integer and fractional quantum Hall edge modes in graphene
G. Le Breton, R. Delagrange, Y. Hong, Manjari Garg, K. Watanabe, T. Taniguchi, R. Ribeiro-Palau, P. Roulleau, P. Roche, and F.D. Parmentier
Physical Review Letters, 129, 116803 (2022).
Quantum Hall Interferometry in Triangular Domains of Marginally Twisted Bilayer Graphene
P. S. Mahapatra, Manjari Garg, B. Ghawri, A. Jayaraman, K. Watanabe, T. Taniguchi, A. Ghosh, and U. Chandni
Nano Letters, 22, 14, 5708 (2022).
Breakdown of Semiclassical Description of Thermoelectricity in Near-Magic Angle Twisted Bilayer Graphene
B. Ghawri*, P. S. Mahapatra*, Manjari Garg*, S. Mandal, S. Bhowmik, A. Jayaraman, R. Soni, K. Watanabe, T. Taniguchi, H. R. Krishnamurthy, M. Jain, S. Banerjee, U. Chandni, and Arindam Ghosh
(*Equal Contribution)
Nature Communications, 13:1522, 1 (2022).
Tailoring the Transfer Characteristics and Hysteresis in MoS2 Transistors Using Substrate Engineering
P. Prasad, Manjari Garg, and U. Chandni
Misorientation-Controlled Cross-Plane Thermoelectricity in Twisted Bilayer Graphene
P. S. Mahapatra*, B. Ghawri*, Manjari Garg, S. Mandal, K. Watanabe, T. Taniguchi, M. Jain, S. Mukerjee, and Arindam Ghosh
(* Equal Contribution)
Physical Review Letters, 125, 226802 (2020).
Surface Modification of AlN Using Organic Molecular Layer for Improved Deep UV Photodetector Performance
S. Kaushik, T. R. Naik, A. Alka, Manjari Garg, B. R. Tak, M. Ravikanth, V. R. Rao, and R. Singh
ACS Applied Electronic Materials, 2, 3, 739 (2020).
Temperature dependent electrical studies on Cu/AlGaN/GaN Schottky barrier diodes with its microstructural characterization
Manjari Garg, A. Kumar, H. Sun, C.-H. Liao, X. Li, and R. Singh
Journal of Alloys and Compounds, 806, 852 (2019).
High-Temperature Photocurrent Mechanism of β-Ga2O3 Based Metal-Semiconductor-Metal Solar-Blind Photodetectors
B. R. Tak, Manjari Garg, S. Dewan, C. G. Torres-Castanedo, K.-H. Li, V. Gupta, X. Li, and R. Singh
Journal of Applied Physics, 125, 144501 (2019).
Gamma Irradiation Effect on Performance of β-Ga2O3 Metal-Semiconductor-Metal Solar-Blind Photodetectors for Space Applications
B. R. Tak, Manjari Garg, A. Kumar, V. Gupta, and R. Singh
ECS Journal of Solid State Science and Technology, 8, Q3149 (2019).
Enhanced Performance of MSM UV Photodetectors by Molecular Modification of Gallium Nitride Using Porphyrin Organic Molecules
Manjari Garg, B. R. Tak, V. R. Rao, and R. Singh
IEEE Transactions on Electron Devices, 66, 2036 (2019).
Giant UV Photoresponse of GaN-based photodetectors by surface modification using Phenol functionalized Porphyrin organic molecules
Manjari Garg, B. R. Tak, V. R. Rao, and R. Singh
ACS Applied Materials and Interfaces, 11, 12017 (2019).
Effect of surface passivation process for AlGaN/GaN HEMT heterostructures using phenol functionalized-Porphyrin based organic molecules
Manjari Garg, T. R. Naik, R. Pathak, V. R. Rao, C.-H. Liao, K.-H. Li, H. Sun, X. Li, and R. Singh
Journal of Applied Physics, 124, 195702 (2018).
Understanding of MoS2/GaN Heterojunction Diode and its Photodetection Properties
M. Moun, M. Kumar, Manjari Garg, R. Pathak, and R. Singh
Scientific Reports, 8, 11799 (2018).
Current Transport Properties of Monolayer Graphene/n-Si Schottky Diodes
C. S. Pathak, Manjari Garg, J. P. Singh, and R. Singh
Semiconductor Science and Technology, 33, 055006, (2018).
Significant improvement in the electrical characteristics of Schottky barrier diodes on molecularly modified Gallium Nitride surfaces
Manjari Garg, T. R. Naik, C. S. Pathak, S. Nagarajan, V. Ramgopal Rao, and R. Singh
Applied Physics Letters, 112, 163502 (2018).
Direct evidence of barrier inhomogeneities at metal/AlGaN/GaN interfaces using nanoscopic electrical characterizations
Ashutosh Kumar, R. Kapoor, Manjari Garg, V. Kumar, and R Singh
Nanotechnology, 28, 26LT02 (2017).
Investigation of significantly high barrier height in Cu/GaN Schottky diode
Manjari Garg, A. Kumar, S. Nagarajan, M. Sopanen, and R. Singh
AIP Advances, 6, 015206 (2016).
Cu–Ni alloy decorated graphite layers for EMI suppression
Saroj Kumari, A. Kumar, A. P. Singh, Manjari Garg, P. K. Dutta, S. K. Dhawan and Rakesh B. Mathur