Improved electrical properties of atomic layer

deposited tin disulfide at low temperatures using ZrO2 layer

Juhyun Lee, Jeongsu Lee, Giyul Ham, Seokyoon Shin, Joohyun Park

Hyeongsu Choi, Seungjin Lee, Juyoung Kim, Onejae Sul, Seungbeck Lee, and Hyeongtag Jeon

AIP advances, volume 7, No. 025311, 2017.02

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