Achieving High Field Effect Mobility of Top Gate a-IGZO TFTs with High-K gate insulator through Capping Layer Oxidation

 Jinwook Do, Taeyang Kim, Jeongeun Kim, Jeemin Kang, Kyubin Hwang, Jiyoung Bang, Hyeonjeong Sun, Seungmin Choi,
Yeongsoo Noh, Hyowon Kim, Seungjae Lee, Yeoeun Yun and Seng-Beck Lee

                                                                                            NANOKOREA 2024, July 3-5, KINTEX (Ilsan)