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Research Interests
Negative capacitance-enabled FETs | Nanoelectronics | FET-based gas Sensors | 2D material-based sensors | Semiconductor Device modeling and simulation
Research Experience
Graduate Research Assistant, Emerging Nanoscale Device (END) Research Group
May 2024-present
Undergraduate Research Assistant, Emerging Nanoscale Device (END) Research Group
January 2023-April 2024
Masters Thesis
Research Topics:
2D Steep-Slope Field-Effect Transistors for Highly Sensitive Gas Sensors.
Enhanced Gas Sensing Performance of In₂O₃-Based Sensors: A Combined Experimental and DFT Study.
Optimization of h-BN/graphene FET based biosensors.
AlGaN/GaN HEMT based highly sensitive gas sensors.
Collaborator: Afsana Anjum Akhi
Supervisor: Dr. Mainul Hossain
Undergraduate Thesis
Title : Negative Capacitance Nanowire Fets for Highly Sensitive Gas Sensors
Collaborator: Afsana Anjum Akhi
Supervisor: Dr. Mainul Hossain
Field-effect transistor (FET) based gas sensors have attracted a lot of attention in recent years, due to their compact size, high sensitivity, excellent reliability, and compatibility with existing CMOS process technology. Here, we present a class of novel nanowire FET-based catalytic metal gate gas sensors with a ferroelectric layer introduced into the metal gate stack. The resulting negative capacitance (NC) effect lowers the subthreshold swing below the Boltzmann limit of 60 mV/decade and offers steep switching characteristics, leading to enhanced sensitivity.
Title : Highly sensitive detection of ammonia gas using steep-switching organic field-effect transistors
Collaborator: Afsana Anjum Akhi
Supervisor: Dr. Mainul Hossain
Organic field-effect transistor (OFET) based gas sensors have attracted a lot of attention in recent years, due to their flexibility, solution processability, transparency, excellent reliability, low power consumption, and potential for use in wearable sensors for personalized health monitoring. In this work, we present a class of novel OFET-based catalytic metal gate gas sensor that can detect NH3 with high sensitivity. The signal transduction is based on the change in work function of the platinum metal gate when NH3 is absorbed on its surface. The proposed OFET consists of an organic ferroelectric layer in its gate stack. The resulting negative capacitance (NC) effect lowers the subthreshold swing and offers steep-switching characteristics, leading to enhanced sensitivity. The performance of the proposed sensor is evaluated by combining the solutions of one-dimensional (1D) Landau-Khalatnikov (L-K) equation with three-dimensional (3D) technology computer-aided (TCAD) device simulations. For a work function change of 50 meV in a double gate NC-OFET device, results show a sensitivity as high as 7.14 µA/eV, paving the way for flexible, lightweight, and highly sensitive gas sensing platforms for wearable applications.
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