Research

We investigate the roles of defects, the dielectric environment, and strain in tuning the electronic and optoelectronic properties of two-dimensional transition-metal dichalcogenides (TMDs). Spatial inhomogeneities arising from lattice imperfections, impurities, and strain significantly influence carrier transport, optical response, and device performance. 

We explore emerging high-mobility materials, including 2D oxychalcogenides and tellurene (Te). These materials exhibit ultrahigh carrier mobility, anisotropic transport, and strong spin–orbit coupling. Our work focuses on understanding their topological electronic properties and evaluating their potential for next-generation electronic and quantum devices.

We study low-temperature magneto-transport properties of monolayer and few-layer 2D materials, including MoS₂, MoSe₂, WS₂, WSe₂, and graphene. Using techniques such as I–V, C–V, C–f, R–T, R–H, photoresponse, and low-frequency noise measurements, we probe the interplay between disorder, carrier interactions, and quantum effects in determining transport behavior.

We investigate light–matter interactions in 2D materials, twisted nanostructures, and 2D–3D heterostructures. Twist engineering enables exciton manipulation and band structure modification, while hybrid heterostructures offer tunable band gaps and efficient charge transport. These studies aim to develop advanced photodetectors, LEDs, and quantum optoelectronic devices.

We explore temperature-, doping-, strain-, and field-induced electronic phase transitions in 2D materials. Special emphasis is placed on metal–insulator transitions and disorder-driven quantum phases. Understanding these phenomena is crucial for designing high-performance transistors, memory elements, and sensors based on tunable electronic states.

Our research includes controlled synthesis of high-quality 2D perovskite nanostructures with tunable bandgaps and strong quantum confinement. Devices fabricated from these materials exhibit low leakage current and ferroelectric behavior, making them promising candidates for optoelectronics, memory devices, and energy-efficient electronics.

We develop nanostructured materials for sensing and neuromorphic computing applications. Dense nanoparticle assemblies with sub-10 nm separation enable sensitive LSPR and SERS-based detection. We also explore FET-based sensors and resistive switching devices for chemical, biomedical, and neuromorphic computing applications, leveraging their nonlinear and memory characteristics.