･[16p-K401-6] 

　Local luminescence characterization of gallium nitride semiconductors 　by wavelength angle-resolved cathodoluminescence method

　Shota Usami(1), Zentaro Akase(1), Kazunori Iwamitsu(1), Toshiya Yokogawa(1), Hajime Fujikura(2), Shigetaka Tomiya(1)

  NAIST(1), Sumitomo Chemical Co., Ltd. (2)

・[17p-K505-9] 

  Spectral Imaging Analysis of InGaN QWs Using Nonnegative Matrix Factorization II

  Kazunori Iwamitsu(1), Kenta Sakai(2), Zentaro Akase(1), Atsushi A. Yamaguchi(2), Shigetaka Tomiya(1)

　　NAIST(1), Kanazawa Inst. of Tech.(2)

・[17p-K505-10] 

  Bayesian Inference for Time-Resolved Photoluminescence in Nitride Semiconductors

  K. Ikebe(1), K. Iwamitsu(1),  S. Kaneki(2), H. Fujikura(2), Z. Akase(1), Atsushi A. Yamaguchi(3), S. Tomiya(1)

   NAIST (1), Sumitomo Chemical Co., Ltd. (2), Kanazawa Inst. of Tech. (3)

・[17p-K505-12]

 Non-rigid Registration of 3D Atom Probe and Transmission Electron Microscopy Data

  Zentaro Akase (1), Yoshito Otake (1), Jun Uzuhashi (2),  Kazunori Iwamitsu (1), Jun Yamasaki (3), Tadakatsu Ohkubo (2), Shigetaka Tomiya (1)

  NAIST (1), NIMS (2), Osaka Univ. (3)

 In addition, the following presentations were made in collaboration with Sony Semiconductor Solutions Corporation and Tokyo University of Science:

・[15a-K301-1]

  The relationship between the crystallinity and thermal conductivity of MoS2 thin films produced by RF magnetron sputtering

  Tatsuya Kitazawa (1) , Yuta Inaba (1), Shunsuke Yamashita (1), Shinya Imai (2) , Keita Kurohara (2), Tetsuya Tatsumi (2), Hitoshi Wakabayashi (2), Shigetaka Tomiya (3,1,2)

 Sony Semiconductor Solutions (1), Science Tokyo (2), NAIST (3)

・ [16a-K101-5] 

 Low-particle-flux sputtering of thin MoS2 film at low temperature

 Shinya Imai, Iriya Muneta, Kuniyuki Kakushima, Tetsuya Tatsumi, Shigetaka Tomiya and Hitoshi Wakabayashi

 Science Tokyo

Bessho, Taisei 

  "Initial investigation of a three-dimensional observation method for amorphous oxide multilayers by transmission electron microscopy"

Fuku, Ryunosuke

    "Characterization of optical properties of GaInN QWs by cathodoluminescence spectral imaging"

Ikebe, Keita 

   "Bayesian estimation approach to photoluminescence spectrum analysis in nitride semiconductor"

Kitajima, Koki 

   "Analysis of emission spectrum in AlGaN/GaN two-dimensional electron gas structures"

Nojima, Seiyo

   "Preliminary Study on Image Recognition Technique for Semiconductor Trench Structures using Scanning Electron Microscopy"

Usami, Shota 

   "Study of characterization methodology for luminescence distribution from surface morphology of Gallium Nitrideu using wavelength- and angle-resolved cathodoluminescence spectroscopy"

"Spectral Imaging Analysis of InGaN Quantum Wells Using Tensor Decomposition"

Kazunori Iwamitsu 1, Kenta Sakai 2, Zentaro Akase 1, Atsushi A. Yamaguchi 2, and Shigetaka Tomiya1

1. Nara Institute of Science and Technology, 8916-5 Takayama-cho / Ikoma, Nara 630-0192, Japan

2. Kanazawa Institute of Technology, 7-1 Ohgigaoka / Nonoichi, Ishikawa 921-8501, Japan

Uploaded photos to X (Photo 1, Photo 2).

[18p-A24-8]

"Multimodal Emission Spectral Imaging Analysis of InGaN Quantum Well Structure Using Non-negative Matrix Factorization" 

〇Kazunori Iwamistu 1, Kenta Sakai 2, Zentaro Akase 1, Atsushi A. Yamaguchi 2、Shigetaka Tomiya 1 (1.NAIST (Narai Institute of Science and Technology), 2. KIT (Kanazawa Institute of Technology)

Tatsuki Shimbo (M1) of the Kanazawa Institute of Technology gave the following lecture at the conference.

[19p-C42-13]

"Wavelength dependence of photoluminescence lifetime in InGaN single quantum wells" 

〇Tatsuki Shimbo1, Hiroki Tosa 1, Atsushi A. Yamaguchi 1, Kazunori Iwamitsu 2, Shigetaka Tomiya  (1.KIT, 2.NAIST)

P-11

"Characterization of III-Nitride materials by using wavelength- and angle-resolved cathodoluminescence spectroscopy"

Shota Usami, Zentaro Akase, Kazunori Iwamitsu, Shigetaka Tomiya

P-12

"Feature Extraction Techniques for Electron Microscope Images Using Machine Learning"

Seiyo Nojima, Zentaro Akase, Kazunori Iwamitsu, Shigetaka Tomiya

Abstract

Defects such as grain boundaries (GBs) fundamentally control thermal and electrical transport in two-dimensional (2D) transition metal dichalcogenide (TMDC) materials, but the mechanism remains elusive. We have studied thermal and electrical transport across and along the GB within a monolayer of a prototypical TMDC, MoS2, using molecular dynamics simulation and first-principles quantum-mechanical calculation. We found the existence of an interfacial phase (or “interphase”) within a few nanometers from the GB, which has anisotropic transport properties that are distinct from those of a perfect crystal. Namely, the GB interphase has reduced thermal conductivity across the GB. In stark contrast, the electrical conductivity of electron-doped MoS2 is enhanced in both directions, with higher conductivity across the GB. These results are understood in terms of the alignment of energy levels and spatial distribution of electronic wave functions around the GB. Such contrasting thermal and electrical transport properties of the GB interphase suggest a promising application of GB superlattices to thermoelectric power regeneration for sustainable future 2D electronics.

Abstract

With the advent of new materials and the increasing complexity of devices, there is a need to develop more advanced measurement and data analysis techniques. This talk first discusses the purpose of measurement and the need for metrology informatics using data science. Then, a case study of efficient data processing by machine learning in the analysis of ion-induced damage in GaN is presented. A case study of dislocation analysis in GaN using a combination of transmission electron mi-croscopy and 3D atom probe tomography will also be presented. Finally, I explore the potential of multimodal analysis methods to obtain accurate and reliable results. 

https://www.nedo.go.jp/introducing/iinkai/ZZBF_100742.html

Abstract

This study investigates the effects of sulfur atomic defects and crystallinity on the thermal conductivity of MoS2 thin films. Utilizing scanning transmission electron microscopy (STEM), X-ray diffraction (XRD), and Raman spectroscopy, we examined MoS2 films, several nanometers thick, deposited on Si/SiO2 substrates. These films were prepared via a combination of RF magnetron sputtering and sulfur vapor annealing (SVA) treatment. Structural analyses, including cross-sectional STEM and in-plane and out-of-plane XRD measurements, revealed an increase in the S/Mo ratio and grain size of the MoS2 films following SVA treatment. Notably, the in-plane thermal conductivity of MoS2 films treated with SVA was found to be at least an order of magnitude higher than that of films without SVA treatment. This research suggests that the in-plane thermal conductivity of MoS2 thin films can be significantly enhanced through crystallinity improvement via SVA treatment.

"Introduction to the Data Science Center at the NAIST"

The approach to science is changing from hypothesis-driven science, in which assumptions made by researchers are verified through experiments, to "data-driven" science, in which models that explain the assumptions are found based on experimental data obtained in various ways. The Center is developing data-driven science across information, biotechnology, materials, and their interdisciplinary fields. It is pioneering new interdisciplinary fields in these fields, promoting the development of advanced research and flexible education that meets the demands of society. Furthermore, the Center has begun pioneering activities to build a "research transformation" platform that realizes a new research cycle in which experimental, theoretical, and AI research fields are closely linked, and knowledge extracted from research results is quickly returned to determine the next research direction. This presentation will introduce the Center and its research transformation efforts, especially its measurement informatics efforts.

"Metrology Informatics on Semiconductor Materials"

  Materials Informatics is a method of exploring and designing new materials using data-driven science. For this purpose, optimizing materials fabrication processes and processing methods for data measurement and analysis are also indispensable. In recent years, it has come to be called process informatics and metrology informatics.  

  Material properties and device characteristics depend highly on the fabrication method, i.e., "process." Therefore, it is necessary to add process conditions in addition to the correlation between physical properties and structure (composition and device configuration). Measurement and analysis are essential to grasp changes in materials due to processes. Therefore, the key is extracting valuable and extensive information from the acquired data.  It is essential to accurately capture material changes caused by process conditions in process development, and quantitative measurement data is required. Using informatics methods will become increasingly important to extract more information from measurement data than ever.  

  In this talk, after describing the importance of metrology informatics from the viewpoint of so-called RX (research transformation), we will introduce examples of metrology informatics mainly related to semiconductors, including our studies, such as the dry etching process of GaN and composition fluctuations of InGaN ternary alloys by using transmission electron microscopy and the related spectroscopy.

Metrology informatics in materials and devices

The role of measurement in materials informatics

Award name: 13th Materia Paper Award, Japan Institute of Metals and Materials

Award recipients: Kazuya Okamoto (Professor, Nippon Institute of Technology), Masaaki Sugiyama (Visiting Professor, Ultra-High Voltage Electron Microscopy Center, Osaka University), Shunsuke Muto (Professor), Rika Aoyagi (Professor, Seikei University), Shigetaka Tomiya (Nara) (Professor, Japan Advanced Institute of Science and Technology)

Paper title: Consideration from Multiple Perspectives of Advanced AI Measurement Technology for the Development of Advanced Materials (Part 1) (Part 2)