Publications

71. Dynamic Interplay between Transport and Reaction Kinetics of Luminophores on the Operation of AC-driven Electrochemiluminescence Devices

◎ J. I. Lee#, D. Kang#, S. H. Kong, H. Gim, I.-S. Shin*, J. Kim*, and M. S. Kang* (#contributed equally to this work) 

◎ ACS Appl. Mater. Interfaces (IF: 8.758, ISSN: 1944-8244) 2018 (Nov. 6) 10, 41562-41569 (link), 10.1021/acsami.8b13680

70. Dicyanodistyrylbenzene-Based Copolymers for Ambipolar Organic Field-Effect Transistors with Well-Balanced Hole and Electron Mobilities

◎ H. S. Ryu, M. J. Kim, M. S. Kang, J. H. Cho*, and H. Y. Woo*  

◎ Macromolecules (IF: 5.918, ISSN: 1520-5835) 2018 (Oct 10) 51, 8258-8267 (link), 10.1021/acs.macromol.8b01700

69. Pulsed Driving Method for Enhancing the Stability of Electrochemiluminescence Devices

◎ E.-S. Ko#, J. I. Lee#, H. C. Lim, J.-E. Park, S. H. Kong, J.-I. Hong, M. S. Kang* and I.-S. Shin* (#contributed equally to this work) 

◎ ACS Photon. (IF: 6.864, ISSN: 2330-4022) 2018 (July 31) 5, 3723-3730 (link), 10.1021/acsphotonics.8b00748

68. Capacitively Coupled Hybrid Ion Gel and Carbon Nanotube Thin-Film Transistors for Low Voltage Flexible Logic Circuits

◎ Y. Choi, J. Kang, E. B. Secor, J. Sun, H. Kim, J. A. Lim, M. S. Kang, M. C. Hersam and J. H. Cho*  

◎ Adv. Funct. Mater.  (IF: 16.836, ISSN: 1616-301X), 2018 (Jun, 25) 28, 1802610 (link), 10.1002/adfm.201802610

67. Proton-Conductor-Gated MoS2 Transistors with Room Temperature Electron Mobility of >100cm2/Vs

◎ Y. Choi, H. Kim, J. Yang, S. W. Shin, S. H. Um, S. Lee, M. S. Kang*, and J. H. Cho* 

◎ Chem. Mater.  (IF: 9.567, ISSN: 1520-5002) 2018 (Jun. 19) 30, 4527-4535 (link), 10.1021/acs.chemmater.8b00568

66. Piezotronic Graphene Barristor: Efficient and Interactive Modulation of Schottky Barrier 

◎ S. Kim, Y. J. Choi, H. J. Woo, Q. Sun*, S. Lee, M. S. Kang, Y. J. Song, Z. L. Wang, and J. H. Cho*   

◎ Nano Energy (IF:16.602, ISSN: 2211-2855) 2018 (Aug) 50, 598-605 (link), 10.1016/j.nanoen.2018.06.010

◎ selected as the back cover article

65. Electrically Controllable Molecularization of Terahertz Meta-Atoms 

◎ H. Jung#, J. Koo#, E. Heo, B. Cho, C. In, W. Lee, H. Jo, J. H. Cho, H. Choi, M. S. Kang*, and H. Lee*  (#contributed equally to this work) 

◎ Adv. Mater. (IF:27.398, ISSN: 0935-9648) 2018 (May. 8) 30, 1802760 (link), 10.1002/adma.201802760

◎ selected as the frontispiece article  

64. [Perspective] Lead-Free Perovskite Nanocrystals for Light-Emitting Devices 

◎ J. Sun, J. Yang, J. I. Lee, J. H. Cho*, and M. S. Kang*  

◎ J. Phys. Chem. Lett. (IF: 6.710, ISSN: 1948-7185) 2018 (Mar. 9) 9, 1573-1583 (link), 10.1021/acs.jpclett.8b00301

63. Non-volatile Electric Double Layer Transistor Memory Devices Embedded with Au Nanoparticles 

◎ J. Koo#, J. Yang#, B. Cho, H. Jo, K. H. Lee, and M. S. Kang* (#contributed equally to this work) 

◎ ACS Appl. Mater. Interfaces (IF: 8.758, ISSN: 1944-8244) 2018 (Feb. 22) 10, 9563-9570 (link), 10.1021/acsami.8b01902

62. Tunable Charge Injection via Solution-Processed Reduced Graphene Oxide Electrode for Vertical Schottky Barrier Transistors

◎ Y. J. Choi, J. S. Kim, J. Y. Cho, H. J. Woo, J. Yang, Y. J. Song, M. S. Kang, J. T. Han* and J. H. Cho* 

◎ Chem. Mater.  (IF: 9.567, ISSN: 1520-5002) 2018 (Jan. 4) 30, 636-643 (link), 10.1021/acs.chemmater.7b03460

61. [Perspective] Light-Emitting Devices Based on Electrochemiluminescence: Comparison to Traditional Light-Emitting Electrochemical Cells

◎ S. H. Kong#, J. I. Lee#, S. Kim, and M. S. Kang* (#contributed equally to this work) 

◎ ACS Photonics (IF: 6.884, ISSN: 2330-4022) 2018 (Oct. 30) 5, 267-277 (link), 10.1021/acsphotonics.7b00864

60. Area-Controllable Stamping of Semicrystalline Copolymer Ionogels for Solid-State Electrolyte-Gated Transistors and Light -Emitting Devices

◎ H. J. Kim, H. M. Yang, J. Koo, M. S. Kang, K. Hong* and K. H. Lee*

◎ ACS Appl. Mater. Interfaces (IF: 8.097, ISSN: 1944-8244) 2017 (Nov. 16), 9, 42978-42985 (link), 10.1021/acsami.7b12712

59. Schottky Barrier Controllable Graphene Electrode to Boost Rectification in Organic Vertical P-N Junction Photodiodes

◎ J. S. Kim, Y. J. Choi, H. J. Woo, J. Yang, Y. J. Song, M. S. Kang,* and J. H. Cho*  

◎ Adv. Funct. Mater.  (IF: 13.325, ISSN: 1616-301X), 2017 (Nov, 2) 27, 1704475 (link), 10.1002/adfm.201704475

◎ selected as the inside front cover article  

58. Structure-Property Relationships for Semiconducting Polymers for Flexible and Durable Polymer Field-Effect Transistors

◎ M. J. Kim, A.-R. Jung, M. Lee, D. Kim, S. Ro, S.-M. Jin, H. D. Nguyen, J. Yang, K.-K. Lee, E. Lee, M. S. Kang, H. Kim, J.-H. Choi, B.S. Kim* and J. H. Cho*

◎ ACS Appl. Mater. Interfaces (IF: 8.097, ISSN: 1944-8244) 2017 (Nov. 1), 9, 40503-40515 (link), 10.1021/acsami.7b12435

57. Reliable Multi-State Data Storage with Low-Power Consumption by Selective Oxidation of Pyramid-Structured Resistive Memory

◎ Y. Kim, H. Choi, H. S. Park, M. S. Kang, K.-Y. Shin,* S.-S. Lee,*  and J. H. Park*

◎ ACS Appl. Mater. Interfaces (IF: 8.097, ISSN: 1944-8244) 2017 (Oct. 17), 9, 38643-38650 (link), 10.1021/acsami.7b10188

56. A Non-Chlorinated-Solvent-Processable Fluorinated Planar Conjugatd Polymer for Flexible Field-Effect Transistors

◎ M. Lee, M. J. Kim, S. Ro, S. Choi, S.-M. Jin, H. D. Nguyen, J. Yang, K.-K. Lee, D. U. Lim, E. Lee, M. S. Kang, J. H. Choi, J. H. Cho,*  and B.S. Kim*

◎ ACS Appl. Mater. Interfaces (IF: 8.097, ISSN: 1944-8244) 2017 (Aug. 7), 9, 28817-28827 (link), 10.1021/acsami.7b08071

55. High Resolution a-IGZO TFT Pixel Circuit for Compensating Threshold Voltage Shifts and OLED Degradation

◎ D. Kim. Y. Kim, S. Lee, M. S. Kang, D. Kim, and H. Lee* 

◎ IEEE J. Electron Dev. Soc. (IF: 2.696, ISSN: 2168-6734), 2017 (Jun 20), 5, 372-377 (link), 10.1109/JEDS.2017.2716368

54. Large-area Schottky Barrier Transistors Based on Vertically-Stacked Graphene-Metal Oxide Heterostructure

◎ S. Kim, Y. J. Choi, Y. Choi, M. S. Kang, and J. H. Cho* 

◎ Adv. Funct. Mater. (IF: 13.325, ISSN: 1616-301X), 2017 (Jun 14), 27, 1700651 (link), 10.1002/adfm.201700651

◎ selected as the front cover article (link)

53. Low-Voltage 2D Material Field-Effect Transistors Enabled by Ion Gel Capacitive Coupling

◎ Y. Choi, J. Kang, D. Jariwala, S. A. Wells, M. S. Kang, T. J. Marks, M. C. Hersam* and J. H. Cho* 

◎ Chem. Mater. (IF: 9.890, ISSN: 1520-5002), 2017 (Apr 24), 28, 4008-4013 (link), 10.1021/acs.chemmater.7b00573

52. Large-Area CVD-Grown Sub-2V ReS2 Transistors and Logic Gates

◎ A. Dathbun, Y. Kim, S. Kim, Y. Yoo, M. S. Kang, C. Lee* and J. H. Cho* 

◎ Nano Lett. (IF: 12.080, ISSN: 1530-6984), 2017 (Apr 17), 17, 2999-3005 (link), 10.1021/acs.nanolett.7b00315

51. Assemblies of Colloidal CdSe Tetrapod Nanocrystals with Length Arms for Flexible Thin-Film Transistors

◎ H. Heo#, M. H. Lee#, J. Yang, H. S. Wee, J. Lim, K. Hahm, J. W. Yu, W. K. Bae, W. B. Lee, M. S. Kang*, and K. Char* (#contributed equally to this work)

◎ Nano Lett. (IF: 12.080, ISSN: 1530-6984), 2017 (Mar 28) 17, 2433-2439 (link), 10.1021/acs.nanolett.7b00096

50. Graphene Phototransistors Sensitized by Cu2-xSe Nanocrystals with Short Amine Ligands

◎ J. Lee#, Y. Gim#, J. Yang, H. Jo, J. Han, H. Lee, D. H. Kim, W. Huh, J. H. Cho*, and M. S. Kang* (#contributed equally to this work)

◎ J. Phys. Chem. C (IF: 4.484, ISSN: 1932-7447), 2017 (Feb 17) 121, 5436-5443 (link), 10.1021/acs.jpcc.7b01212

49. Influence of Dielectric Layers on Charge Transport through Diketopyrrolopyrrole-Containing Polymer Films: Dielectric Polarizability vs. Capacitance

◎ J. Lee,* J. W. Chung. G. Yoon, M. H. Lee, D. H. Kim, J. Park, J.-K. Lee, M. S. Kang*

◎ ACS Appl. Mater. Interfaces (IF: 8.097, ISSN: 1944-8244) 2016 (Oct. 18) 8, 30344-30350 (link), 10.1021/acsami.6b09993

48. Organic Dye-Graphene Hybrid Structures with Spectral Color Selectivity

◎ Y. S. Gim#, Y. Lee#, S. Kim, S. Hao, M. S. Kang, W. J. Yoo, H. Kim, C. Wolverton, and J. H. Cho* (#contributed equally to this work)

◎ Adv. Funct. Mater.  (IF: 13.325, ISSN: 1616-301X) 2016 (Jul 18) 26, 6593-6600 (link), 10.1002/adfm.201601200

47. Graphene Transistors Gated by Salted Proton Conductors

◎ H. Kim#, B. J. Kim#, Q. Sun, M. S. Kang*, and J. H. Cho* (#contributed equally to this work)

◎ Adv. Electron. Mater.  (IF: 4.193, ISSN: 2199-160X), 2016 (Aug) 2, 1600122 (link), 10.1002/aelm.201600122

46. Combinatorial Study of Temperature-Dependent Nanostructure and Electrical Conduction of Polymer Semiconductors: Even Bimodal Orientation Can Enhance 3D-Charge Transport

◎ S. Park#, M. H. Lee#, K. S. Ahn#, H. H. Choi, J. Shin, J. Xu, J. Mei, K. Cho, Z. Bao, D. R. Lee*, M. S. Kang*, and D H. Kim* (#contributed equally to this work)

◎ Adv. Funct. Mater.  (IF: 13.325, ISSN: 1616-301X) 2016 (Jul 12), 26, 4627-4634 (link), 10.1002/adfm.201670162

◎ selected as the front cover article (link)

45. An Organic Vertical Field-Effect Transistor with Underside-Doped Graphene Electrodes

◎ J. S. Kim, B. J. Kim, Y. J. Choi, M. H. Lee, M. S. Kang, and J. H. Cho*  

◎ Adv. Mater.  (IF: 21.950, ISSN: 0935-9648) 2016 (Jun 22), 28, 4803-4810 (link), 10.1002/adma.201505378

44. Electronic Properties of Cu2-xSe Nanocrystal Thin Films Treated with Short Ligand (S2-, SCN-, and Cl-) Solutions

◎ J. Lee#, J. Yang#, C. Park, J. H. Kim, and M. S. Kang* (#contributed equally to this work)

◎ J. Phys. Chem. C (IF: 4.484, ISSN: 1932-7447), 2016 (Jun 17) 120, 14899-14905  (link), 10.1021/acs.jpcc.6b03214

43. Low-Band Gap Polymer-Based Ambipolar Transistors and Inverters Fabricated Using a Flow-Coating Method

◎ M. J. Kim, J. H. Park. B. Kang, D. Kim, A-R. Jung, J. Yang, M. S. Kang, D. Y. Lee, K. Cho, H. Kim, B.S. Kim*, and J. H. Cho*)

◎ J. Phys. Chem. C (IF: 4.484, ISSN: 1932-7447), 2016 (Jun 14) 120, 13865-13872 (link), 10.1021/acs.jpcc.6b01371

42. Low-Voltage Complementary Electronics from Ion Gel-Gated Vertical van der Waals Heterostructures

◎ Y. Choi, J. Kang, D. Jariwala, M. S. Kang, T. J. Marks, M. C. Hersam*, and J. H. Cho*  

◎ Adv. Mater.  (IF: 21.950, ISSN: 0935-9648) 2016 (May 18), 28, 3742-3748 (link), 10.1002/adma.201506450

41. Black Phosphorous Nonvolatile Transistor Memory

◎ D. Lee, Y. Choi, E. Hwang, M. S. Kang, S. Lee, and J. H. Cho*  

◎ Nanoscale (IF: 7.233, ISSN: 2040-3364) 2016 (Mar 31), 8, 9107-9112 (link), 10.1039/C6NR02078J 

◎ selected as 2016 Hot Articles in Nanoscale 

40. Electrolyte-Gated Graphene Schottky Barrier Transistors

◎ B. J. Kim, E. Hwang, M. S. Kang, and J. H. Cho*  

◎ Adv. Mater.  (IF: 21.950, ISSN: 0935-9648) 2015 (Oct 21), 27, 5875-5881 (link)

◎ selected as the cover article (link)

39. Thin Films of Highly Planar Polymer Semiconductor Exhibiting Band-like Transport at Room Temperature

◎ J. Lee,*. J. W. Chung, D. H. Kim, B.-L. Lee, J.-I. Park, S. Lee, R. Hausermann, B. Batlogg, S.-S. Lee, I. Choi, I. W. Kim, and M. S. Kang*  

◎ J. Am. Chem. Soc. (IF: 14.357, ISSN: 0002-7863) 2015 (Jun 12), 137, 7990-7993 (link)

38. Apparent pH Sensitivity of Solution-Gated Graphene Transistors

◎ M. H. Lee, B. J. Kim, K. H. Lee, I.-S. Shin, W. Huh, J. H. Cho*, and M. S. Kang*  

◎ Nanoscale (IF: 7.233, ISSN: 2040-3364) 2015 (Mar 27), 7, 7540-7544 (link)

37. Monolithic Metal Oxide Transistors 

◎ Y. Choi#, W.-Y. Park#, M. S. Kang, G.-R. Yi, J. Y. Lee, Y.-H. Kim*, and J. H. Cho* (#contributed equally to this work) 

◎ ACS Nano (IF: 13.709, ISSN: 1936-0851) 2015 (Mar 16), 9, 4288-4295 (link)  

36. Quasi-Unipolar Pentacene Films Embedded with Fullerene for Non-Volatile Organic Transistor Memories

◎ J. Lee#, S. Lee#, M. H. Lee, and M. S. Kang* (#contributed equally to this work) 

◎ Appl. Phys. Lett. (IF: 3.495 , ISSN: 0003-6951), 2015 (Feb 11), 106, 063302 (link)

35. pn-Heterojunction Effects of Perylene Tetracarboxylic Diimide (PTCDI) Derivatives on Pentacene Field-Effect Transistor

◎ S. H. Yu, B. Kang, G. An. B.S. Kim, M. H. Lee, M. S. Kang, H. Kim, J. H. Lee, S. Lee, K. Cho, J. Y. Lee*, and J. H. Cho*

◎ ACS Appl. Mater. Interfaces (IF: 8.097, ISSN: 1944-8244) 2015 (Jan 12), 7, 2025-2031  (link) 

34. Self-Organization of Nanorods into Ultra-Long Range Two-Dimensional Monolayer End-to-End Network

◎ D. Kim, W. D. Kim,  M. S. Kang, S.-H. Kim*, and D. C. Lee*  

◎ Nano Lett. (IF: 12.080, ISSN: 1530-6984), 2015 (Dec 15), 15, 714-720 (link)

27. Reduction and Transition in Thermal Activation for Charge Transport through Electrolyte-Gated Polythiophene Thin Films with High Hole Densities

◎ J. Lee, B. Cho, J. W. Chung, and M. S. Kang*

◎ Appl. Phys. Lett. (IF: 3.495, ISSN: 0003-6951), 2013 (Oct 18) 103, 163302 (link)                                            

26. In/Ga-Free, Inkjet-Printed Charge Transfer Doping for Solution-Processed ZnO

◎ S. H. Yu, B. J. Kim, M. S. Kang, S. H. Kim, J. Y. Lee*, and J. H. Cho*

◎ ACS Appl. Mater. Interfaces (IF: 8.097, ISSN: 1944-8244), 2013 (Oct 9) 5, 9765 (link)      

25. Polyelectrolyte Interlayer for Ultra-Sensitive Organic Transistor Humidity Sensors

◎ Y. D. Park#, B. Kang#, H. Lim, K. Cho, M. S. Kang*, and J. H. Cho* (#contributed equally to this work)

◎ ACS Appl. Mater. Interfaces (IF: 8.097, ISSN: 1944-8244), 2013 (Sep 11) 5, 8591-8596 (link)

24. Wafer-Scale Patterning of Reduced Graphene Oxide Electrodes by "Transfer-and-Reverse-Stamping Method" for High Performance OFETs

◎ J. S. Lee, N. H. Lee, M. S. Kang, H. Yu, D. R. Lee, J. H. Oh, S. T. Chang*, and J. H. Cho*

◎ Small (IF: 9.590, ISSN: 1613-6810) 2013 (Aug 26), 9, 2817-2825 (link)

23. Correlation between Crystallinity, Charge Transport, and Electrical Stability in an Ambipolar Polymer Field-Effect Transistor based on Poly(naphthalane-alt-diketopyrrolopyrrole)

◎ B. J. Kim, H.-S. Lee, J. S. Lee, S. Cho, H. Kim, H. J. Son, H. Kim, M. J. Ko, S. Park, M. S. Kang, S. Y. Oh, B.S. Kim*, and J. H. Cho*

◎ J. Phys. Chem. C (IF: 4.484, ISSN: 1932-7447) 2013 (Jun 6), 117, 11479-11486 (link)

22. A Pedagogical Perspective on Ambipolar FETs

◎ M. S. Kang and C. D. Frisbie*

◎ ChemPhysChem (IF: 2.947, ISSN: 1439-7641) 2013 (Jun 3), 14, 1547-1552 (link)

◎ selected as the cover article (link)

21. Electrical Transport through Single Nanowires of Dialkyl Perylene Diimide

◎ B. J. Kim#, H. Yu#, J. H. Oh*, M. S. Kang*, and J. H. Cho* (#contributed equally to this work)

◎ J. Phys. Chem. C (IF: 4.484, ISSN: 1932-7447) 2013 (May 23), 117, 10743-10749 (link)

20. Decoupling the Bias-Stress-Induced Charge Trapping in Semiconductors and Gate-Dielectrics of Organic Transistors Using a Double Stretched-Exponential Formula

◎ H. H. Choi, M. S. Kang, M. Kim, H. Kim, J. H. Cho*, and K. Cho*

◎ Adv. Funct. Mater. (IF: 13.325, ISSN: 1616-301X) 2013 (Feb 11), 6, 690-696 (link)

19. Influence of Silver Doping on Electron Transport in Thin Films of PbSe Nanocrystals

◎ M. S. Kang, A. Sahu, C. D. Frisbie*, and D. J. Norris*

◎ Adv. Mater. (IF: 21.950, ISSN: 0935-9648) 2013 (Feb 6), 25, 725-731 (link)

18. Enhancing Crystallinity of C60 Layer by Thickness-Control of Underneath Pentacene Layer for High Mobility C60/Pentacene Ambipolar Transistors

◎ K. Ahn, J. B. Kim, H. Park, H. Kim, M. H. Lee, B. J. Kim, J. H. Cho. M. S. Kang*, and D. R. Lee*

◎ Appl. Phys. Lett. (IF: 3.495 , ISSN: 0003-6951) 2013 (Jan 31), 102, 043306 (link)

17. Coplanar-Gate Transparent Graphene Transistors and Inverters on Plastic

◎ B. J. Kim, S.-K. Lee, M. S. Kang, J.-H. Ahn*, and J. H. Cho*

◎ ACS Nano (IF: 13.709, ISSN: 1936-0851) 2012 (Oct 23), 6, 8646-8651 (link)

16. Surface Viscoelasticity of an Organic Interlayer Affects the Crystalline Nanostructure of an Organic Semiconductor and Its Electrical Performance

◎ H. S. Lee#, M. S. Kang#, S. K. Kang, B. J. Kim, S. H. Um, D. Y. Ryu, D. R. Lee*, and J. H. Cho* (#contributed equally to this work)

◎ J. Phys. Chem. C (IF: 4.484, ISSN: 1932-7447) 2012 (Oct 18), 116, 21673-21678 (link)

15. "Cut and Stick" Rubbery Ion Gels as High Capacitance Gate Dielectric

◎ K. Lee, M. S. Kang, S. Zhang, Y. Gu, T. P. Lodge*, and C. D. Frisbie*

◎ Adv. Mater. (IF: 21.950, ISSN: 0935-9648) 2012 (Aug 22), 24, 4457-4462 (link)

◎ highlighted in Nature, 2012, 489, 510-511 (link)

14. Electronic Impurity Doping in CdSe Nanocrystals

◎ A. Sahu, M. S. Kang, A. Kompch, C. Notthoff, A. W. Wills, D. Deng, M. Winterer, C. D. Frisbie, and D. J. Norris*

◎ Nano Lett. (IF: 12.080, ISSN: 1530-6984) 2012 (May 9), 12, 2587-2594 (link)

◎ highlighted in Nature Mater., 2012, 11, 486 (link)

13. Gallium Nitride Nanostructure for Light-Emitting Diode Applications

◎ M. S. Kang, C.-H. Lee, J. B. Park, H. Yoo, and G.-C. Yi*

◎ Nano Energy (IF: 13.120, ISSN: 2211-2855) 2012 (May), 1, 391-400 (link)

12. Highly Tunable Charge Transport in Layer-by-Layer Assembled Graphene Transistors

◎ H. Hwang, P. Joo, M. S. Kang, J. T. Han, B.-S. Kim*, and J. H. Cho*

◎ ACS Nano (IF: 13.709, ISSN: 1936-0851) 2012 (Mar 27), 6, 2432-2440 (link)

11. Synthesis and Characterization of Al- and In-Doped CdSe Nanocrystals

◎ A. W. Wills, M. S. Kang, K. M. Wentz, S. E. Hayes, A. Sahu, W. L. Gladfelter*, and D. J. Norris*

◎ J. Mater. Chem. (IF: 6.626, ISSN: 0929-9428) 2012 (Apr 7), 22, 6335-6342 (link)

10. Low-Temperature, Solution-Processed and Alkali Metal Doped ZnO for High Performance Thin-Film Transistors

◎ S. Y. Park, B. J. Kim, K. Kim, M. S. Kang, K. -H. Lim, T. I. Lee, J. M. Myoung, H. K. Baik, J. H. Cho*, and Y. S. Kim*

◎ Adv. Mater. (IF: 21.950, ISSN: 0935-9648) 2012 (Feb 7), 24, 834-838 (link)

9. Stereodiversgent Approach to Both syn- and anti-Isomers of gamma-Amino-beta-Hydroxy Acids: (3S,4S)- and (3R,4S)-AHPPA Derivatives

◎ D. Yoo, J. Song, M. S. Kang, E.-S. Kang, and Y. G. Kim*

◎ Tetrahedron: Asymmetry (IF:2.126, ISSN: 0957-4166) 2011 (Sep), 22, 1700-1704 (link)

8. Size- and Temperature-Dependent Charge Transport in PbSe Nanocrystal Thin Films

◎ M. S. Kang, A. Sahu, D. J. Norris*, and C. D. Frisbie*

◎ Nano Lett. (IF: 12.080, ISSN: 1530-6984) 2011 (Sep 14), 11, 3887-3892 (link)

7. Low-Voltage Solution Processed Graphene Transistors Based on Chemically and Solvothermally Reduced Graphene Oxide

◎ B. J. Kim#, M. S. Kang#, V. H. Pham, T. V. Cuong, E. J. Kim, J. S. Chung, S. H. Hur*, and J. H. Cho* (#contributed equally to this work)

◎ J. Mater. Chem. (IF: 6.626, ISSN: 0929-9428) 2011 (Sep 14), 21, 13068-13073)  (link)

6. Facile Synthesis of Silver Chalcogenide (Ag2E, E = Se, S, and Te) Semiconductor Nanocrystals

◎ A. Sahu, L. Qi, M. S. Kang, D. Deng, and D. J. Norris*

◎ J. Am. Chem. Soc. (IF: 14.357, ISSN: 0002-7863) 2011 (May 4), 133, 6509-6512 (link)

5. Size-Dependent Electrical Transport in CdSe Nanocrystal Thin Films

◎ M. S. Kang, A. Sahu, D. J. Norris*, and C. D. Frisbie*

◎ Nano Lett. (IF: 12.080, ISSN: 1530-6984) 2010 (Sep 8), 10, 3727-3732 (link)

4. Thermally Degradable Ligands for Nanocrystals

◎ A. W. Wills, M. S. Kang, A. Khare, W. L. Gladfelter*, and D. J. Norris*

◎ ACS Nano, (IF: 13.709, ISSN: 1936-0851) 2010 (Aug 24), 4, 4523-4530 (link)

3. Influence of Atmospheric Gases on the Electrical Properties of PbSe Quantum-Dot Films

◎ K. S. Leschkies, M. S. Kang, E. S. Aydil*, and D. J. Norris*

◎ J. Phys. Chem. C (IF: 4.484, ISSN: 1932-7447) 2010 (Jun 3), 114, 9988-9996 (link)

2. Solar Cells Based on Junctions between Colloidal PbSe Nanocrystals and Thin ZnO Films

◎ K. S. Leschkies, T. J. Beatty, M. S. Kang, D. J. Norris*, and E. S. Aydil*

◎ ACS Nano (IF: 13.709, ISSN: 1936-0851) 2009 (Nov 24), 3, 3638-3648 (link)

1. High Carrier Densities Achieved at Low Voltages in Ambipolar PbSe Nanocrystal Thin-Film Transistors

◎ M. S. Kang, J. Lee, D. J. Norris*, and C. D. Frisbie*

◎ Nano Lett. (IF: 12.080, ISSN: 1530-6984) 2009 (Nov 11), 9, 3848-3852 (link)

33. Low-Temperature Annealed PbS Quantum Dot Films for Scalable and Flexible Ambipolar Thin-Film-Transistors and Circuits

◎ C. H. Jo#, J. H. Kim#, J. Kim, J. Kim, M. S. Oh, M. S. Kang, M.-G. Kim, Y. H. Kim, B.-K. Ju*, and S. K. Park* (#contributed equally to this work) 

◎ J. Mater. Chem. C (IF: 5.976, ISSN: 2050-7526), 2014 (Dec 28), 2, 10305-10311 (link)

32. Versatile Threshold Voltage Control of OTFTs via Discontinuous pn-Heterojunction Formation 

◎ B. Cho#, S. H. Yu#, M. H. Lee, J. Lee, J. Y. Lee, J. H. Cho, and M. S. Kang* (#contributed equally to this work)

◎ Org. Electron. (IF: 3.680, ISSN: 1566-1199), 2014 (Oct 7), 15, 3439-3444 (link) 

31. Discontinuous pn-Heterojunction for Organic Thin Film Transistors

◎ B. Cho#, S. H. Yu#, M. Kim, M. H. Lee, W. Huh, J. Lee, J. Kim, J. H. Cho, J. Y. Lee, Y. J. Song*, and M. S. Kang* (#contributed equally to this work)  

◎ J. Phys. Chem. C (IF: 4.484, ISSN: 1932-7447), 2014 (Jul 9) 118, 18146-18152 (link)

30. Water-Gel for Gating Graphene Transistors

◎ B. J. Kim, S. H. Um, W. C. Song, Y. H. Kim, M. S. Kang*, and J. H. Cho* 

◎ Nano Lett. (IF: 12.080, ISSN: 1530-6984), 2014 (Apr 28), 14, 2610-2616 (link) 

29. Modular Fabrication of Hybrid Bulk Heterojunction Solar Cells Based on Breakwater-like CdSe Tetrapod Nanocrystal Network Infused with P3HT

◎ J. Lim#, D. Lee#, M. Park, J. Song, S. Lee, M. S. Kang*, C. Lee*, and K. Char* (#contributed equally to this work)

◎ J. Phys. Chem. C (IF: 4.484, ISSN: 1932-7447) 2014 (Jan 31), 118, 3942-3952 (link)                                                      

28. Solid-Phase Flexibility in Ag2Se Semiconductor Nanocrystals

◎ A. Sahu, D. Braga, O. Waser, M. S. Kang, D. Deng, and D. J. Norris*

◎ Nano Lett. (IF: 12.080, ISSN: 1530-6984), 2014 (Jan 8), 14, 115-121 (link)

1. 이온젤 전해질 절연체 기반 고분자 비휘발성 메모리 트랜지스터

◎ 조보은, 강문성*

◎ 한국전기전자재료학회지 (연구재단 등재), ISSN: 1226-7945) 2016 (Dec), 29, 759-763, (link) 10.4313/JKEM.2016.29.12.759

등록

24. [KR] 광 데이타 기반 전류 측정 시스템 및 이를 이용하는 전류 측정 방법 제 10-2826780

◎ 강문성, 이현오, 이종익 

◎ 출원:22.10.31, 등록 25.06.25

23. [KR] 아연이 도핑된 양자점 및 이의 제조 방법 제 10-2796928

◎ 정소희, 강문성, 김효인, 신대권, 윤종일, 조현우 

◎ 출원:24.10.16, 등록 25.04.11

22. [KR] 아연이 도핑된 양자점 및 이의 제조 방법 제 10-2720207호

◎ 정소희, 강문성, 김효인, 신대권, 윤종일, 조현우 

◎ 출원:21.12.14, 등록 24.10.16

21. [KR] 양자점 리간드 가교제, 이를 포함하는 양자점 잉크 조성물, 및 이를 이용하여 제작된 양자점 패턴 제 10-2698404호

◎ 강문성, 이도창 

◎ 출원:21.12.01, 등록 24.8.20

20. [KR] 가교와 해리가 가역적으로 가능한 양자점 리간드 및 이를 이용하여 제조된 양자점 박막 제 10-2699703호 

◎ 강문성, 김혁준, 임창혁, 배완기, 임재민, 함동효 

◎ 출원:21.12.01, 등록 24.8.23

19. [KR] 백색 유기 발광층 및 이의 제조방법 제 10-2680965호

◎ 강문성, 한동헌, 장우익 

◎ 출원:22.5.30, 등록 24.6.28

18. [KR] 플로팅 전극을 포함하는 전기화학발광 디바이스 제 10-2615102호

◎ 강문성, 이종익, 박동목 

◎ 출원:20.4.3, 등록 23.12.13

17. [KR] 전하 수송 복합체 및 이를 포함하는 전하 수송층의 고해상도 패터닝 방법, 이를 포함하는 전하 수송층 조성물, 이를 포함하는 유기발광소자 제 10-2537611호 

◎ 김도환, 권혁민, 정욱진, 하보리나, 조정호, 김선권, 강문성, 이승한 

◎ 출원:22.7.11, 등록 23.5.23

16. [US] ACTIVE METAMATERIALS ARRAY AND METHOD FOR MANUFACTURING THE SAME US 11,520,206 B2 

◎ Ho Jin Lee, Moon Sung Kang, Hyun Seung Jung, Eun Ah Heo, Bo Eun Cho, Jae Mok Koo 

◎ 출원:18.9.24, 등록 22.12.6

15.  [US] FILM OF QUANTUM DOT, METHOD FOR PATTERNING THE SAME AND QUANTUM DOT LIGHT EMITTING DEVICE USING THE SAME US 11,056,650 B2

◎ Moon Sung Kang, Jeong Ho Cho, Jee Hye Yang 

◎ 출원:19.4.8, 등록 21.7.6

14. [US] COMPOUND OF ORGANIC SEMICONDUCTOR AND ORGANIC SEMICONDUCTOR DEVICE USING THE SAME US 10,991,894 B2

◎ Do Hwan Kim, Hojin Lee, Han Wool Park, Keun-Yeong Choi, Moon Sung Kang, Haejung Hwang, Ji Hye Shin 

◎ 출원:18.11.15, 등록 21.4.27

13. [KR] 발광 및 변색형 듀얼모드 멀티 터치 센서 제 10-2173827호 

◎ 김도환, 남경아, 양지혜, 김승한, 강문성 

◎ 출원:17.9.26, 등록: 2020.10.28

12. [US] VISCO-POROELASTIC ELASTOMER-BASED CAPACITOR TYPE TACTILE SENSOR US 10,684,179 B2 

◎ Do Hwan Kim, Joo Sung Kim, Eun Song Jee, Moon Sung Kang 

◎ 출원:18.8.10, 등록:20.6.16

11. [KR] 양자점 박막, 이의 패터닝 방법 및 이를 적용한 양자점 발광소자 제 10-2087299호 

◎ 강문성, 조정호, 양지혜 

◎ 출원:18.4.09, 등록 20.3.4

10. [US] METHOD OF MANUFACTURING ORGANIC SEMICONDUCTOR DEVICE US 10,529,937 B2

◎ Do Hwan Kim, Moon Sung Kang, Haejung Hwang, Han Wool Park, Ji Hye Shin 

◎ 출원:17.11.30, 등록:20.01.07

9. [US] LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREFOR US 10,411,216 B2

◎ Do Hwan Kim, Moon Sung Kang, Sang Sik Park, Seok Hwan Kong 

◎ 출원:18.7.25, 등록:19.09.10

8.  [KR] 유기 반도체 소자의 제조 방법 제 10-2038124 호 

◎ 김도환, 강문성, 황해중, 박한울, 신지혜 

◎ 출원:17.6.22, 등록: 19.10.23

7. [KR] 이온성 젤 미세 패턴 형성 방법 제 10-1922572 호 

◎ 이호진, 강문성, 정현승, 허은아, 구재목, 이원우, 조보은

◎ 출원:17.3.27, 등록: 18.11.21

6. [KR] 점유탄성 탄성중합체 기반 커패시터형 촉각센서 제 10-1876438 호

◎ 김도환, 김주성, 지은송, 강문성 

◎ 출원:17.8.10, 등록: 18.7.3

5. [KR] 발광 소자 및 제조방법 제 10-1876436 호 

◎ 김도환, 강문성, 박상식, 공석환 

◎ 출원:16.10.17/등록: 18.7.3

4. [KR] 발광소자 제 10-1864835 호 

◎ 신익수, 강문성, 이지열, 공석환 

◎ 출원:16.7.28, 등록: 18.5.30

3. [KR] 능동형 메타물질 어레이 및 그 제조 방법 제 10-1785508 호 

◎ 이호진, 강문성, 정현승, 허은아, 조보은, 구재목 

◎ 출원:16.10.12, 등록: 17.9.29

2. [KR] 금속 산화물 트랜지스터 및 이의 제조 방법 제 10-1556644 호

◎ 조정호, 최용석, 김영훈, 박원영, 강문성 

◎ 출원:14.11.7/등록:15.9.23

1. [KR] 그래핀-유기 반도체 수직형 트랜지스터 및 이의 제조 방법 제 10-1744231 호

◎ 조정호, 김범준, 강문성 

◎ 출원:15.8.12, 등록: 17.5.31

출원

• 29 [KR] 전계 발광용 양자점, 상기 전계 발광용 양자점을 포함하는  양자점 잉크 조성물 및 전계 발광 소자, 상기 전계 발광 소자의  제조 방법 및 상기 전계 발광 소자를 포함하는 전자 장치 10-2025-0216604 강문성 외 (출원 25.12.31) 

• 28 [KR] 광경화성 단량체, 이를 포함하는 광경화성 공중합체, 이를 포함하는 양자점 잉크 조성물 및 이를 이용하여 제조된 양자점 패턴 10-2025-0160241 강문성 외 (출원 25.10.31)

• 27 [KR] 광가교성 양자점 리간드용 화합물, 광가교성 양자점, 이를 포함하는 양자점 잉크 조성물 및 이를 이용하여 제조된 양자점 패턴 10-2025-0160242 강문성 외 (출원 25.10.31)

• 26 [KR] 양자점 리간드 가교제, 이를 포함하는 양자점 잉크 조성물 및 이를 이용하여 제조된 양자점 패턴 10-2025-0160243 강문성 외 (출원 25.10.31)

• 25 [KR] 양자점, 이를 포함하는 조성물, 상기 조성물의 전기영동 특성과 이를 이용하여 제조된 발광층, 이를 포함하는 디스플레이 장치 및 제조방법 강문성 외 (출원 25.9.4)

• 24 [KR] 레지스트 조성물 및 이를 이용한 반도체 소자의 제조 방법 10-2025-0073748 강문성 외 (출원:25.6.5)

• 23. [JP] COLLOIDAL PARTICLE INK COMPOSITION, METHOD OF FORMING COLLOIDAL PARTICLE PATTERN BY USING THE SAME, COLLOIDAL PARTICLE PATTERNED FILM USING THE SAME, AND ELECTRONIC DEVICE INCLUDING COLLOIDAL PARTICLE PATTERN 2025-3483 강문성 외 (출원:25.1.9)

• 22. [CN] COLLOIDAL PARTICLE INK COMPOSITION, METHOD OF FORMING COLLOIDAL PARTICLE PATTERN BY USING THE SAME, COLLOIDAL PARTICLE PATTERNED FILM USING THE SAME, AND ELECTRONIC DEVICE INCLUDING COLLOIDAL PARTICLE PATTERN 202510034554.1 강문성 외 (출원:25.1.9)

• 21. [US] COLLOIDAL PARTICLE INK COMPOSITION, METHOD OF FORMING COLLOIDAL PARTICLE PATTERN BY USING THE SAME, COLLOIDAL PARTICLE PATTERNED FILM USING THE SAME, AND ELECTRONIC DEVICE INCLUDING COLLOIDAL PARTICLE PATTERN 19/013514 강문성 외 (출원:25.1.8)

• 20. [KR] 콜로이달 입자 잉크 조성물, 이를 이용한 콜로이달 입자 패터니 형성 방법, 콜로이달 입자 패턴 필름 및 전자 소자 10-2025-0002060 강문성 외 (출원:24.01.09, 25.01.07)

• 19. [US] ZINC-DOPED QUANTUM DOT AND MANUFACTURING METHOD THEREFORE 18/743654 강문성 외 (출원:24.6.14) 

• 18. [KR] 등록

• 17. [KR] 3차원 가교제용 조성물 및 이를 이용한 전자 소자 제조 방법 10-2024-0003638 강문성 외 (출원:24.01.09)

• 16. [KR] 표시 장치 및 표시 장치의 제조 방법 10-2023-0076433 강문성 외 (출원:23.06.14)

• 15. [PCT] 아연이 도핑된 양자점 및 이의 제조 방법 PCT/KR2022/019691 강문성 외 (출원:22.12.06)

• 14. [KR] 등록

• 13. [KR] 광가교를 이용한 다층 반도체 나노판상구조체 제조 방법 10-2022-0101307 강문성 외 (출원:22.08.12)

• 12. [KR] 백색 유기 발광 소자 및 이의 제조 방법 10-2022-0039722 강문성 외 (출원:22.3.30) 

• 11. [KR] 유기 실리콘-유기 반도체 복합체 및 이를 포함하는 유기 반도체 막 10-2022-0022084 강문성 외 (출원:22.2.21)

• 10. [KR] 광가교를 이용한 반도체 나노판상구조체의 패터닝 방법 10-2021-0172863 강문성 외 (출원:21.12.06)

• 9. [KR] 가교와 해리가 가역적으로 가능한 양자점 리간드 10-2020-0173251 강문성 외 (출원:20.12.11)

• 8. [KR] 양자점 리간드 가교제, 및 이를 포함하는 양자점 잉크 조성물 10-2020-0173204 강문성 외 (출원:20.12.11)

• 7. [KR] 광가교를 이용한 반도체 나노판상구조체의 패터닝 방법 10-2020-0171939 강문성 외 (출원:20.12.10)

• 6. [KR] 전기화학발광소자용 계측 장치 및 그 방법 10-2018-0014051 강문성 외 (출원:18.2.5)

• 5. [KR] 수직형 유기 PN 접합 포토다이오드 및 이의 제조 방법 10-2017-0177506 강문성 외 (출원:17.12.21)

• 4. [KR] 수직형 쇼트키 장벽 트랜지스터 및 이의 제조 방법 10-2017-0177512 강문성 외 (출원:17.12.21)

• 3. [PCT] 능동형 메타물질 어레이 및 그 제조 방법 PCT/KR2017/001929 강문성 외 (출원:17.2.22)

• 2. [PCT] 발광 소자 및 제조방법 PCT/KR2017/000379 강문성 외 (출원:17.1.11)

• 1. [PCT] 유기 반도체 소자의 제조 방법 PCT/KR2017/006734 강문성 외 (출원:17.6.26)

Submitted

1. Meta Surface (1/16)

◎ W. Lee, H. Jo, H. Jung, M. S. Kang*, and H. Lee*

2. Multi-Threshold Synaptic Transistors (12/24)

◎ D. U. Lim, D G. Roe, Y. Y. Choi, Y. Yoo, M. S. Kang, and J. H. Cho*

3. Twisted bilayer graphene (12/30)

◎ B. Kim, A. Yuk, Y. Chang, D. Park, M. Kim, M. S. Kang*, and H. Yoo*

4. QD direct photolithography (1/3)

◎ J. H. Keum, Y. Kang, S. Y. Park, H. Kim, S.H. Roh, Y. Jo, and M. S. Kang*

5. PR (1/8)

◎ T. H. Kwon, S. Chang, E. Hong, J. Jeon, G. Jeon, H.-K. Lim, H. J. Kim, S. Hong, and M. S. Kang*

6. Thermoelectric (1/13)

◎ Y.-C. Peng, C.-W. Hsu, H. Kwon, P.-S. Lin, M. S. Kang, H. Y. Woo, C.-L. Liu*

7. Crosslinker (1/27)

◎ S. Y. Park, S. Lee, R. S. Ramji, J. Yang, M. Park, T. A. Pascal, D. J. Lipomi, and M. S. Kang*

Under revision

1. Electrochemiluminescence

◎ N. H. Kim, H. Yee, T. N. Le, D. Lee, Y. S. Ham, J. I. Lee, M. C. Suh, T. A. Grusenmeyer, W. Huh, and M. S. Kang*

2. QD patterning

◎ C. H. Lim, H. Ham, H. J. Lee, M. Lee, J. Keum, J. W. Park, S. Lee, H. Bhang, S. Lee, H. Jo, Y. H. Jo, W. K. Bae, M. S. Kang* and B.S. Kim*