The 18th MRAM Global Innovation Forum
December 17, 2026
San Francisco, USA
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The MRAM Global Innovation Forum is an annual event that brings together leading experts, researchers, and industry professionals in the field of Magnetoresistive Random Access Memory (MRAM).
The forum serves as a platform for sharing the latest advancements, innovations, and research findings in MRAM technology, which is a type of non-volatile memory known for its high speed, endurance, and low power consumption.
This annual one-day event, held the day after IEDM, will feature 10+ invited talks from leading experts in MRAM technology, along with a panel discussion.
MRAM Forum is now part of the SNIA MRAM Alliance Special Interest Group (SIG), part of the SNIA Compute, Memory and Storage community.
Date & Location
December 17, 2026
8:45 AM - 6 PM | Room Imperial A/B
Hilton San Francisco Union Square, USA
Registration
From September 14 to December 1, 2026
The event is free and includes a free lunch, but it is limited to 250 participants.
Program Committee
Chair : Kevin Garello and Daniel Worledge
Shunsuke Fukami (Tohoku University, Japan)
Kevin Garello (Spintec, France)
Jack Guedj (Numem, USA)
Jean Anne Incorvia (University of Texas at Austin, USA)
Jordan Katine (Western Digital, USA)
Kyung-Jin Lee (KAIST, South Korea)
Vinayak Bharat Naik (Tata Electronics, India)
Luc Thomas (Vertical Computing Technology, USA)
Daniel Worledge (IBM, USA)
Acknowledgements and Sponsors
This Forum marks the 18th edition of a series initiated by Samsung Semiconductor in 2013.
It is primarily supported by Samsung Semiconductor.
MRAM Forum is now part of the SNIA MRAM Alliance Special Interest Group (SIG), part of the SNIA Compute, Memory and Storage community
The Society extends its deep gratitude to Samsung for their continued sponsorship.
We also thank the IEEE Magnetics Society, for their logistical support and additional funding, and this year’s Gold and Silver Sponsors.
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