The 17th MRAM Global Innovation Forum

The MRAM Global Innovation Forum is an annual event that brings together leading experts, researchers, and industry professionals in the field of Magnetoresistive Random Access Memory (MRAM). 

The forum serves as a platform for sharing the latest advancements, innovations, and research findings in MRAM technology, which is a type of non-volatile memory known for its high speed, endurance, and low power consumption.

This annual one-day event, held the day after IEDM, will feature 12 invited talks from leading experts in MRAM technology, along with a panel discussion.

Panel Discussion                                                                                              

Advantages & Challenges of MRAM on system-level designs (from user perspective)

Panelists

• TBD

• Name, Affiliation

Ackowledgements                                                                                                            

This Forum marks the 17th edition of a series initiated by Samsung Semiconductor in 2013.

It is supported by Samsung Semiconductor through a donation to the IEEE Magnetics Society. 

The Society extends its deep gratitude to Samsung for their continued sponsorship.

We also thank the IEEE Magnetics Society for their logistical support and additional funding.