MG300Q1US11 IGBT: 300A1200V; MG300Q1US11
Toshiba MG300Q1US11 New IGBT: 300A1200V, MG300Q1US11 pictures, MG300Q1US11 price, MG300Q1US11 supplier
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MG300Q1US11, V(ces): 1200V V(ges): 20V 2000W insulated gate bipolar transistor. For high power switching and motor control applications
MG300Q1US11 1.03 lbs
MG300Q1US11 could be used in High Power Switching Applications Motor Control Applications
INSULATED GATE BIPOLAR TRANSISTOR
IGBT: 300A1200V