Sell Toshiba MG150Q2YS50 New Stock

MG150Q2YS50 IGBT: 150A1200V; MG150Q2YS50

• Part Number: MG150Q2YS50
• Category: IGBT Module
• Manufacturer: Toshiba
• Packaging: IGBT Module
• Data Code: 2016+
• Qty Available: 321

Toshiba MG150Q2YS50 New IGBT: 150A1200V, MG150Q2YS50 pictures, MG150Q2YS50 price, MG150Q2YS50 supplier

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MG150Q2YS50 N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS), Toshiba

Collector-emitter voltage Vces=1200V

Gate-emitter voltage Vges=±20V

Collector current DC IC=200 / 150A VCE = 5V

Collector current 1ms ICP=400/300A

Forward current DC IF=150A

Forward current 1ms IFM=300A

collector power dissipation(Tc = 25°C) PC=1250W

Junction temperature Tj=150°C

Storage temperature range Tstg=−40 ~ 125 °C

Isolation voltage VIsol=2500V

Screw torque (Terminal / mounting)= 3/3 N·m

High Power Switching ApplicationsMotor Control Applications

MG150Q2YS50 Description

MG150Q2YS50 GTR Module: Silicon N-Channel IGBT; 150 Amp; 1200 Volt

MG150Q2YS50 0.56 lbs

Target_Applications

MG150Q2YS50 could be used in High Power Switching / Motor Control Applications

Features

N Channel IGBT (High Power Switching / Motor Control Applications)