Facilities

Cryogenic VTI (300 mK, 12 Tesla)

Cryogenic Variable Temperature Insert (12 T,  300 mK) setup with rotator probe

2d Layer Aligner

2D dry transfer system with 0.01 degree rotation and heater enabled stage 

Exfoliated 2d vdW material onto Si/SiO_2 substrate

Targeted delivery of a few nm thick 2d-vdW material onto pre-patterned (EBL) substrate

Ferro-Magnetic Resonance (FMR) Spectroscopy

FMR Spectroscopy Setup (NanOsc Sweden PhaseFMR) with ISHE enabled.

Multiferroic properties measurement setup

Multiferroic properties measurement setup powered by PRECESION PREMEIER II(Radiant Technologies) embedded with low temperature setup powered by LAKESHORE 340 PID controller

(A) Remanent electric polarization of PLD made PCMO|Si  at different temperature from 80 K-120 K taken by “PUND” method at pulse width of 1 kHz with maximum applied field of 1 kV/cm. Inset: The corresponding saturation polarization versus temperature, (B) Corresponding temperature dependence of coercive field at pulse width of 1 kHz , (C) frequency dependence of coercive field at 80 K for two different maximum applied electric fields of 700 V/cm (solid red) and 1 kV/cm (open blue). 

Wire Bonder and E-Beam Deposition System

Wire Bonder is used to make contact using thin platinum/gold/aluminum wire  with thin film grown on substrate.

Electron Beam Deposition System for high quality thin films

2-Zone Furnace for Chemical Vapor Transport(CVT) and Muffle Furnace

Chemical Vapor Transport(CVT) Furnace: To grow high quality single crystals.

High quality single crystals (maximum lateral size of 5mm) were grown using CVT method with the 2-zone tube furnace

Muffle Furnace: To grow high quality single crystals.

High quality single crystals  were grown using self flux method

Single crystals grown by self flux and chemical vapor transport (CVT) method