"Pulse program for improving learning accuracy and reducing programming energy consumption of ferroelectric synaptic transistor"

Jae Yeob Lee, Cheol Jun Kim, Minkyung Ku, Tae Hoon Kim, Taehee Noh, Seung Won Lee, Yoonchul Shin, Ji-Hoon Ahn, and Bo Soo Kang*

Current Applied Physics 67, 93 (2024). (link)

"Switching layer optimization in Co-based CBRAM for > 10^5 memory window in sub-100 µA regime"

Yongjun Cho, Bo Soo Kang*, Pankaj Kumbhare, Romain Delhougne, Laura Nyns, Ming Mao, Ludovic Goux, Gouri Sankar Kar, and Attilio Belmonte*

Solid State Electronics 219, 108964 (2024). (link)

"Optimization Method for Conductance Modulation in Ferroelectric Transistor for Neuromorphic Computing"

Cheol Jun Kim, Jae Yeob Lee, Minkyung Ku, Tae Hoon Kim, Taehee Noh, Seung Won Lee, Ji-Hoon Ahn, and Bo Soo Kang*

Advanced Electronic Materials 10, 2300698 (2024). (link)

(Front inside cover link)

"Mechanism of the Wake-Up and the Split-Up in AlOx/Hf0.5Zr0.5Ox Film"

Min Jin Kim, Cheol Jun Kim, and Bo soo Kang*

Nanomaterials 13(14), 2146 (2023). (link) 

"Effect of wake-up on the polarization switching dynamics of Si doped HfO2 thin films with imprint"

Min Chul Chun, Sanghyun Park, Solmin Park, Ga-yeon Park, Min Jin Kim, Yongjun Cho, and Bo Soo Kang∗

Journal of Alloys and Compounds, 823, 153777 (2020). (link) 

"Effects of Pb content and electrode materials on the ferroelectric properties of Pb(Zr0.52Ti0.48)O3 thin films"

Min Chul Chun, Sanghyun Park, Solmin Park, Ga-yeon Park, and Bo Soo Kang∗

Journal of Alloys and Compounds, 781, 1028 (2019).  (link) 

"Negative capacitance phenomena depending on the wake-up effect in the ferroelectric Si:HfO2 film"

Sanghyun Park, Min Chul Chun, Solmin Park, Ga-yeon Park, Moonyoung Jung, Youngji Noh, Seung-Eon Ahn, and Bo Soo Kang*

Current Applied Physics. Vol.19, Issue 3, 347-350 (2019). (link) 

"Effects of repetitive polarization switching on the coercive voltage of Pt/Pb(Zr0.52Ti0.48)O3/Pt thin films analyzed using impedance spectroscopy"

Min Chul Chun, Solmin Park, Sanghyun Park, Ga-yeon Park, and Bo Soo Kang∗

Current Applied Physics Vol.19, Issue 3, 503-505 (2019). (link) 

"Effects of the fluctuation in a singly-connected conducting filament structure on the distribution of the reset parameters in unipolar resistance switching"

Sang-Chul Na, Keundong Lee, Min Chul Chun, Young-Sun Kwon, Hye-Jin Shin, Sangik Lee, Bae Ho Park, and Bo Soo Kang*

Applied Physics Letters, 106, 133503 (2015).

"Mechanism of the reset process in bipolar-resistance-switching Ta/TaOx/Pt capacitors based on observation of the capacitance and resistance"

Sang-Chul Na, Jae-Jun Kim, Min Chul Chun, Da Hee Jin, Seung-Eon Ahn, and Bo Soo Kang*

Applied Physics Letters, 104, 123503 (2014).

"Impedance spectroscopy of resistance switching in a Pt_NiO_Pt capacitor"

Sangchul Na, Minchul Chun, Jae-Jun Kim, Jung Wook Shon, Sunkak Jo, Hyunjin Kim, and Bo Soo Kang*

J. Korean Phys. Soc. 63, 2277 (2013).

"Dynamic switching mechanism of conduction,set process in Cu/a-Si/Si memristive device"

Ligang Gao*, Shin Buhm Lee, Brian Hoskins, Hyang Keun Yoo, and Bo Soo Kang

Applied Physics Letters, 103, 043503 (2013).

"Forming Mechanism of the Bipolar Resistance Switching in Double-layer Memristive Nanodevices"

S. B. Lee, H. K. Yoo, K. Kim, J. S. Lee, Y. S. Kim, S. Sinn, D. Lee, B. S. Kang, B. Kahng, and T. W. Noh

Nanotechnology (2012).

"Investigation for Resistive Switching by Controlling Overflow Current in Resistance Change Nonvolatile Memory"

S.-E. Ahn, M.-J. Lee, B. S. Kang, D. Lee, C.-J. Kim, D.-S. Kim, and U.-I. Chung

IEEE Transactions on Nanotechnology, 11, 1122 (2012).

"Reversible changes between bipolar and unipolar resistance-switching phenomena in a Pt/SrTiOx/Pt cell"

S. B. Lee, S. H. Chang, H. K. Yoo, M. J. Yoon, S. M. Yang, and B. S. Kang*

Current Applied Physics, 12, 1515 (2012).

"Avoiding fatal damage to the top electrodes when forming unipolar resistance switching in nano-thick material systems"

S. B. Lee, D.-H. Kwon, K. Kim, H. K. Yoo, S. Sinn, M. Kim, B. Kahng, and B. S. Kang*

J. Physics D-Applied Physics (2012).

"Dielectric-breakdown-like forming process in the unipolar resistance switching of Ta2O5-x thin films"

M. J. Yoon, S. B. Lee, H. K. Yoo, S. Sinn, and B. S. Kang*

Current Applied Physics (2012).

"Strain Mismatch Induced Tilted Heteroepitaxial (000l) Hexagonal ZnO Films on (001) Cubic Substrates"

B. S. Kang, L. Stan, I. O. Usov, J.-K. Lee, T. A. Harriman, D. A. Lucca, R. F. DePaula, P. N. Arendt, M. Nastasi, J. L. MacManus-Driscoll, B. H. Park, and Q. Jia

Advanced Engineering Materials, 13, 1142 (2011).

"Bipolar resistance switching of NiO/indium tin oxide heterojunction"

S.-E. Ahn and B. S. Kang*

Current Applied Physics, 11, S349 (2011).

"Oxide Double-Layer Nanocrossbar for Ultrahigh-Density Bipolar Resistive Memory"

S. H. Chang, S. B. Lee, D. Y. Jeon, S. J. Park, G. T. Kim, S. M. Yang, S. C. Chae, H. K. Yoo, B. S. Kang, M.-J. Lee, and T. W. Noh

Advanced Materials, 23, 4063 (2011).

"Resistive Switching and Transport Characteristics of Cu/a-Si/Si Devices"

B. S. Kang, D. Cha, S. Lee, S.-C. Na, D.-W. Kim

J. Korean Physical Society, 58, 1156 (2011).

"Time-dependent current-voltage curves during the forming process in unipolar resistance switching"

S. B. Lee, H. K. Yoo, S. H. Chang, L. G. Gao, B. S. Kang, M.-J. Lee, C. J. Kim, and T. W. Noh

Applied Physics Letters, 98, 053503 (2011).

"Conversion from unipolar to bipolar resistance switching by inserting Ta2O5 layer in Pt/TaOx/Pt cells"

H. K. Yoo, S. B. Lee, J. S. Lee, S. H. Chang, M. J. Yoon, Y. S. Kim, B. S. Kang, M.-J. Lee, C. J. Kim, B. Kahng, and T. W. Noh

Applied Physics Letters, 98, 183507 (2011).

"Metal-Insulator-like transition in the LaAlO3/BaTiO3 interface"

S. C. Chae, W. S. Choi, H. K. Yoo, and B. S. Kang*

Current Applied Physics, 11, 521 (2011).

"Stabilizing the forming process in unipolar resistance switching using an improved compliance current limiter"

S. B. Lee, S. H. Chang, H. K. Yoo, and B. S. Kang*

J. Physics D: Applied Physics, 43, 485103 (2010).

"Resistive switching transition induced by a voltage pulse in a Pt/NiO/Pt structure"

I. Hwang, M.-J. Lee, G.-H. Buh, J. Bae, J. Choi, J.-S. Kim, S. Hong, Y. S. Kim, I.-S. Byun, S.-W. Lee, S.-E. Ahn, B. S. Kang, S.-O. Kang, and B. H. Park

Applied Physics Letters, 97, 052106 (2010).

"Reduction in high reset currents in unipolar resistance switching Pt/SrTiOx/Pt capacitors using acceptor doping"

S. B. Lee, A. Kim, J. S. Lee, S. H. Chang, H. K. Yoo, T. W. Noh, B. Kahng, M.-J. Lee, C. J. Kim, and B. S. Kang*

Applied Physics Letters, 97, 093505 (2010).

“Fractal dimension of conducting paths in nickel oxide (NiO) thin films during resistance switching”

I. K. Yoo, B. S. Kang, S. E. Ahn, C. B. Lee, M. J. Lee, G.-S. Park, and X.-S. Li

IEEE Transactions on NanoTechnology, 9, 131 (2010).

“Multilevel programmable oxide diode for cross-point memory by electrical-pulse-induced resistance change”

K. H. Kim, B. S. Kang*, M.-J. Lee, S.-E. Ahn, C. B. Lee, G. Stefanovich, W. X. Xianyu, C. J. Kim, and Y. Park

IEEE Electron Device Letters, 30, 1036 (2009).

“Large 1/f noise of unipolar resistance switching and its percolating nature”

S. B. Lee, S. Park, J. S. Lee, S. C. Chae, S. H. Chang, M. H. Jung, Y. Jo, B. Kahng, B. S. Kang, M.-J. Lee, and T. W. Noh

Applied Physics Letters, 95, 122112 (2009).

“Stackable all oxide based nonvolatile memory with Al2O3 antifuse and p-CuOx/n-InZnOx diode”

S.-E. Ahn, B. S. Kang*, K. H. Kim, M.-J. Lee, C. B. Lee, G. Stefanovich, C. J. Kim and Y. Park

IEEE Electron Device Letters, 30(5), 550 (2009).

“Low-temperature-grown transition metal oxide based storage material and oxide transistors for high-density non-volatile memory”

M.-J. Lee, S. I. Kim, C. B. Lee, H. Yin, S.-E. Ahn, B. S. Kang, K. H. Kim, J. C. Park, C. J. Kim, I. Song, S. W. Kim, G. Stefanovich, J. H. Lee, S. J. Chung, Y. H. Kim, and Y. Park

Advanced Functional Materials, 19, 1587 (2009).

"High-current-density CuOx/InZnOx thin-film diode for cross-point memory applications"

B. S. Kang, S.-E. Ahn, M.-J. Lee, G. Stefanovich, K. H. Kim, W. X. Xianyu, C. B. Lee, Y. Park, I. G. Baek, and B. H. Park

Advanced Materials, 20(16),3066 (2008).

"Write current reduction in transition metal oxide based resistance change memory"

S.-E. Ahn, M.-J. Lee, Y. Park, B. S. Kang*, C. B. Lee, K. H. Kim, S. Seo, D.-S. Suh, D.-C. Kim, J. Hur, W. Xianyu, G. Stefanovich, H. Yin, I.-K. Yoo, J.-H. Lee, J.-B. Park, I.-G. Baek and B. Ho. Park

Advanced Materials, 20, 924-928 (2008).

"Effects of metal electrodes on the resistive memory switching property of NiO thin films"

C. B. Lee, B. S. Kang*, M. J. Lee, S. E. Ahn, K. H. Kim, G.Stefanovich, A. Benayad, Y. Park, and I. K. Yoo

Applied Physics Letters, 93(4), 042115 (2008).

"Defect-induced degradation of rectification properties of aged Pt/n-InxZn1-xOy Schottky diodes"

K. H. Kim, B. S. Kang*, M.-J. Lee, S.-E. Ahn, C. B. Lee, G. Stefanovich, W. X. Xianyu, K.-K. Kim, J. S.Kim, I. K. Yoo, and Y. Park

Applied Physics Letters, 92(23), 233507 (2008).

"Interpretation ofnano-scale conducting paths and their control in nickel oxide (NiO) thin films"

I. K. Yoo, B. S. Kang, Y. D. Park, M. J. Lee, and Y. Park

Applied Physics Letters, 92, 202112 (2008).

"Comparative structural and electrical analysis of NiO and Ti doped NiO as materials for resistance random access memory"

M.-J. Lee, Y. Park, S. E. Ahn, B. S. Kang,C. B. Lee, K. H. Kim, W. X. Xianyu, I. K. Yoo, J. H. Lee, S. J. Chung, Y. H.Kim, C. S. Lee, K. N. Choi and K. S. Chung

J. Appl. Phys. 103, 013706 (2008).

"Strain relaxation in sol-gel grown epitaxial anatase thin films"

H. S. Jung, J. K. Lee, J. Lee, B. S. Kang, Q. X. Jia, and M.Nastasi

J. Phys. Chem. C,112, 4205 (2008).

“Electromigration effect of Nielectrodes on the resistive switching characteristics of NiO thin films”

C. B.Lee, B. S. Kang*, M.-J. Lee,S.-E. Ahn, G. Stefanovich, W. X. Xianyu, K. H. Kim, J. H. Hur, H. Yin, Y. Park,I. K. Yoo, J.-B. Park, and B. H. Park

Applied Physics Letters, 91, 082104 (2007).

"Data retention characteristics of Bi3.25La0.75Ti3O12 thin films on conductive SrRuO3 electrodes"

J.-S. Lee, B. S. Kang, and Q. X. Jia

Applied Physics Letters, 91, 142901 (2007).

"Two series oxide resistors applicable to high speed and high density nonvolatile memory"

M.-J. Lee, Y. Park, D.-S. Suh, E.-H. Lee, S. Seo, D.-C. Kim, R. Jung, B.-S. Kang, S.-Eon Ahn, C. B. Lee, D. H. Seo, Y.-K. Cha, I.-K. Yoo, J.-S. Kim, and B. H. Park

Advanced Materials, 19, 3919 (2007).

“Effect of conductive LaNiO3 electrode on the structural and ferroelectric properties of Bi3.25La0.75Ti3O12 films”

M. Jain, B. S. Kang, and Q. X. Jia

Applied Physics Letters, 89(24),242903 (2006).

“Low field magneto-transport properties of (La0.7Sr0.3MnO3)0.5:(ZnO)0.5 nanocomposite films”

B. S. Kang, H. Wang, J. L. MacManus-Driscoll, Y. Li, Q. X. Jia, I. Mihut, and J. B. Betts

Applied Physics Letters, 88(19), 192514(2006).

“Dielectric properties of <001>-oriented Ba0.6Sr0.4TiO3 thin films on polycrystalline metal tapes using biaxially oriented MgO/γ-Al2O3 buffer layers”

W. Choi, B. S. Kang, Q. X. Jia, V. Matias, and A. T.Findikoglu

Applied Physics Letters, 88(6), 062907 (2006).

“Ferromagnetic properties of epitaxial SrRuO3 thin films grown on SiO2/Si using bi-axially oriented MgO as templates”

B. S. Kang, J.-S. Lee,L. Stan, R. F. DePaula, P. D. Arendt, and Q. X. Jia

Applied Physics Letters, 86(7),072511 (2005).

“Retention properties of fully integrated (Bi,La)4Ti3O12capacitors and their lateral size effects”

D. J. Kim, J. Y.Jo, Y. W. So, B. S. Kang, T. W. Noh, J.-G. Yoon, T. K. Song, K. H. Noh,S.-S. Lee, S.-H. Oh, K.-N. Lee, S.-K. Hong, and Y.-J. Park

Applied Physics Letters, 86(2), 022903 (2005).

“Dielectric properties of epitaxial Ba0.6Sr0.4TiO3 filmson SiO2/Si using bi-axially oriented ion-beam-assisted deposited MgO as templates”

B. S. Kang, J.-S. Lee, L. Stan, J.-K. Lee, R. F.DePaula, P. N. Arendt, M. Nastasi, and Q. X. Jia

Applied Physics Letters, 85(20), 4702 (2004).

“Anisotropic dielectricproperties in epitaxial Bi3.25La0.75Ti3O12 thin films along different crystal directions”

J.-S. Lee, B.S. Kang, Y. Li, Y. Lin, and Q. X. Jia

Applied Physics Letters, 85(13),2586 (2004).

“Polarization retention in Pb(Zr0.4Ti0.6)O3 capacitors withIrO2 top electrodes”

B. S. Kang, D. J. Kim, J. Y. Jo, T. W.Noh, J.-G. Yoon, Y. K. Lee, J. K. Lee, S. Shin, and Y. S. Park

Applied Physics Letters, 84(16), 3127 (2004)

“Charge retention loss and its mechanism of (Bi,La)4Ti3O12 capacitors”

D. J. Kim, J. Y. Jo, Y. W. So, B. S. Kang, T. W. Noh, J.-G.Yoon, T. K. Song, K. H. Noh, S.-S. Lee, S.-H. Oh, S.-K. Hong, and Y.-J. Park

Integrated Ferroelectrics, 67, 85 (2004).

"Mechanisms for retention loss in ferroelectric Pt/PbZr0.4Ti0.6O3/Pt capacitors"

B. S. Kang, J.-G. Yoon, D. J. Kim, T. K. Song, T. W. Noh, S. Seo, Y. K. Lee,and J. K. Lee

Applied Physics Letters, 82(13), 2124 (2003).

"Polarizationdynamics and retention loss in fatigued PbZr0.4Ti0.6O3ferroelectric capacitors"

B. S. Kang, J.-G. Yoon, T. K. Song, T. W. Noh, S. Seo, Y. K. Lee, and J. K.Lee

Applied Physics Letters, 82, 248 (2003).

"Hydrogen-induceddegradation in ferroelectric Bi3.25La0.75Ti3O12"

S. Seo, J.-G. Yoon, T. K. Song, J. D. Kim, B. S. Kang, T. W.Noh, Y. K. Lee, Ch. J. Kim, I. S. Lee, J. K. Lee, and Y. S. Park

Applied Physics Letters, 81(10), 1857 (2002).

"Mechanism of lowtemperature hydrogen-annealing-induced degradation in Pb(Zr0.4Ti0.6)O3capacitors"

S. Seo, J.-G. Yoon, T. K.Song, B. S. Kang, T. W. Noh, Y. K. Lee, C. J. Kim, and Y. S. Park

Applied Physics Letters, 81, 697 (2002).

"Dynamical aspects ofretention and its relation to fatigue in ferroelectric thin films"

B. S. Kang, J.-G. Yoon, T. K. Song, Y.W. So, S. Seo, and T. W. Noh

Jpn. J. Appl. Phys. 41(11B), 6836 (2002).

"Hydrogen-induceddegradation mechanisms in ferroelectric (Bi,La)4Ti3O12and Pb(Zr,Ti)O3 thin films"

J.-G. Yoon, S. Seo, B. S. Kang, J. D. Kim, T. W. Noh, Y. K.Lee, and Y. S. Park

Jpn. J. Appl. Phys. 41(11B), 6781 (2002).

"Effects of lanthanide dopants on the ferroelectric properties of Bi4Ti3O12Thin Films"

Y. W. So, B. S. Kang,S. Seo, D. J. Kim, T. W. Noh, and J. G. Yoon

Ferroelectrics, 271, 347 (2002).

"High resistanceagainst hydrogen-induced degradations in ferroelectric Bi3.25La0.75Ti3O12thin films"

S. Seo, J. -G. Yoon, B.S. Kang, T. W. Noh, C. J. Kim, Y. K. Lee, and Y. S. Park

Jpn. J. Appl. Phys. 41, 7433 (2002).

"Retentioncharacteristics of Bi3.25La0.75Ti3O12thin films"

B. S. Kang, J.-G. Yoon, T. K. Song, Y. W. So, S. Seo, and T. W. Noh

Jpn. J. Appl. Phys. 41, 5281 (2002).

"Electricalproperties of SrVO3/SrTiO3 superlattices grown by lasermolecular beam epitaxy"

D. H. Kim, D.-W. Kim, B.S. Kang, T. W. Noh, D. R. Lee, K.-B. Lee, and S. J. Lee

Solid State Comm, 114, 473 (2000).

"Pulsed laser ablationsynthesis and characterization of ferroelectric SrBi2Ta2O9thin films"

S. D. Bu, B. H. Park, B.S. Kang, S. H. Kang, and T. W. Noh

J. Korean. Phys. Soc. 35, S1197 (1999).

"Origins forfatigue-free properties of Bi-layered perovskite materials"

B. H. Park, B. S. Kang, S. D. Bu, and T. W. Noh

J. Korean. Phys. Soc. 35, S1306 (1999).

"Electrical propertiesof Bi-layered Bi3TiTaO9 films grown by pulsed laserdeposition",

B. S. Kang, B. H. Park, S. H. Kang, S. D. Bu, and T. W. Noh,

J. Korean. Phys. Soc. 35, S1227 (1999).

"Lanthanum-substituted bismuth titanate for use in non-volatile memories"

B. H. Park, B. S. Kang, S. D. Bu, T. W. Noh, J. Lee, and W.Jo

Nature, 401, 682 (1999).

"Different fatiguebehaviors of SrBi2Ta2O9 and Bi3TiTaO9 films: Role of perovskite layers"

B. S. Kang, B. H. Park, S. D. Bu, S. H. Kang, and T. W. Noh

Applied Physics Letters, 75, 2644 (1999).

"Influence of thelaser fluence on the electrical properties of pulsed laser deposited SrBi2Ta2O9thin films"

S. D. Bu, B. H. Park, B.S. Kang, T. W. Noh, W. Jo

Applied Physics Letters, 75, 1155 (1999).

"Atomic control ofhomoepitaxial SrTiO3 films using laser molecular beam epitaxy"

D.-W. Kim, D.-H. Kim, B.-S. Kang, T. W. Noh, S. Shin, and Z. G.Khim

Physica C, 313, 246 (1999).