The successful doping of common semiconductors led to the electronics and optoelectronics revolution. Various doping methods have been developed based on the desired application properties till then. In order to build future technologies, my research aims to create new theoretical approaches to exploit defect thermodynamics in semiconductors.
Electronic charges (electron or hole) while moving through particularly polar or ionic semiconductors distort the lattice owing to self-polarizing field. The interaction between the charge and phononic vibrations causes the charges to become "self-trapped" and produce polarons. The application of materials for a wide range of functionalities, including electronic, opto-electronic devices and catalysis, is greatly influenced by the formation and transport of small polarons. I have been working extensively to reveal how polaron dynamics affect exotic semiconductor properties.
A fundamental building block of quantum information is a quantum bit, or qubit. Due to its ability to store quantum information for a considerable amount of time and the ability of its spins to construct entangled quantum networks with photons, the nitrogen-vacancy (NV) center defect in diamonds has emerged as a leading candidate for a qubit. One of my research aims is to understand doping strategies and peculiarities of quantum materials and search for better alternatives to NV center defects for Quantum-information applications.
Electronically active point defects in metal oxide photo(electro)catalysts are detrimental non-radiative recombination centers and should be minimized for performance improvement. On the other hand, by controlling charge transfer and modulating limiting potential, chemical and electronic defects both actively participate in photocatalysis. I am recently focusing on exploring defect chemistry in materials for heterogeneous catalytic applications.