In-House Facilities
Riber molecular beam epitaxy system used for quantum-material thin-film growth.
Molecular Beam Epitaxy
Our MBE laboratory is used to synthesize oxide heterostructures, rare-earth intermetallic thin films, and magnetic quantum materials. The system supports fully computer-controlled growth using predefined deposition sequences, enabling reproducible control of complex growth and annealing protocols. The growth chamber routinely reaches a base pressure below 2×10−10 Torr, maintained by a combination of cryogenic, high-compression turbomolecular, and ion pumping. In situ RHEED provides real-time feedback on surface structure and growth, enabling control of crystalline orientation, phase formation, and interface quality.
Oxford TeslatronPT cryogenic transport system for low-temperature, high-field measurements.
Low-Temperature Quantum Transport
We perform cryogenic electrical transport measurements to investigate superconductivity, magnetotransport, nonlinear response, and symmetry-dependent electronic phenomena. Our measurement platform combines high magnetic fields, low temperatures, precision low-noise electronics, flexible sample rotation, and wire-bonded device integration for angle-dependent and low-signal transport studies.
Capabilities: temperatures down to ~1.4 K · magnetic fields up to 12 T · dual-axis sample rotation · low-noise DC/AC transport · lock-in and harmonic detection · precision cryogenic resistance measurements
Precision low-noise DC/AC transport: Keithley 6221 current source and 2182A nanovoltmeter; Linear Research LR-700 AC resistance bridge
Lock-in and harmonic detection: Stanford Research Systems SR850 DSP lock-in amplifier
Cryogenic resistance measurements: Lake Shore 370 and 372 resistance bridges
Device interconnects: West Bond wire bonder for electrical contacting of thin-film and microfabricated devices
Omicron scanning probe microscopy system for surface characterization of quantum-material thin films.
Surface & Materials Characterization
We use scanning probe and surface-analysis techniques to characterize thin-film morphology, surface structure, and electronic properties. These measurements provide feedback on growth quality and help connect synthesis conditions with the microscopic properties of quantum-material thin films and heterostructures.
PHI VersaProbe 5000 XPS system
We use X-ray photoelectron spectroscopy to probe surface composition, chemical states, and oxidation-state changes in quantum-material thin films and heterostructures, providing a direct connection between synthesis conditions and electronic properties.
Our in-house capabilities are complemented by University at Buffalo shared research infrastructure for device fabrication and advanced materials characterization.
The Davis Hall Electrical Engineering Cleanroom provides shared facilities for lithography, deposition, etching, metrology, and sample preparation, supporting fabrication and processing of thin-film devices and heterostructure-based transport structures.
UB's Materials Characterization Laboratories provide complementary capabilities for surface, structural, and bulk materials characterization. These shared resources extend our in-house capabilities for analyzing thin films, interfaces, and device structures.
Explore UB Science & Engineering Shared Facilities