- Deposition of in-plane and perpendicular thin films (sputtering);
- Fabrication of MTJ (E-Beam Lithography and Etching);
- BEOL integration of STT-MRAM (Al/Cu connection);
- The increasing of VCMA coefficient.
- “Failure Analysis in Magnetic Tunnel Junction Nanopillar with Interfacial Perpendicular Magnetic Anisotropy. Materials”. Materials, 2016.
- “STT-MRAM存储器的研究进展”. SCIENTIA SINICA Physica, Mechanica & Astronomica, 2016.
- “一种自旋转移矩磁存储单元”, 201610124480.1.
- InterMag IEEE; May 2015, Tsinghua University, China;
- “2016 IEEE Magnetics Society Summer School”; Jul 2016, Tohuku University, Japan.