Research

Ferroelectricity in oxide thin films

We investigate the ferroelectric  properties of oxide thin films. Our interests include non-volatility of the ferroelectric spontaneous polarization for the next generation memory devices ranging from FeRAM, FeFET, and tunneling devices. We are trying to understand the stability of ferroelectricity in forms of the metal-ferroelectric and  semiconductor-ferroelectric junctions. 

Ferroelectricity in AlScN

A novel ferroelectric material Al1-xScxN has attracted significant attention for its exceptionally high remanent polarization (>100 μC/cm2) and substantial coercive field (>3 MV/cm). The ferroelectric properties of Sc doped AlN films demonstrated plausible conceptual devices like ferroelectric field-effect transistors (FeFET) and ferroelectric tunnel junctions (FTJ) with high compatibility to the complementary metal-oxide semiconductor (CMOS). For the next-generation devices beyond the von Neumann architecture, we investigate the ferroelectricity of AlScN film.