AWARD
AWARD
LEDIA 2024 Paper Award Winners
LEDIA 2024 Paper Award Winners
Young Researcher’s Paper Award
Young Researcher’s Paper Award
Shuhei Ichikawa, Osaka University (Japan)
Combinational integration of Eu-doped GaN and InGaN LEDs and their prospects for miniaturization
Co-authors: Y. Fujiwara, K. Kojima
Shuhei Ichikawa, Osaka University (Japan)
Combinational integration of Eu-doped GaN and InGaN LEDs and their prospects for miniaturization
Co-authors: Y. Fujiwara, K. Kojima
Student’s Paper Award, “Yamaguchi Masahito Award”
Student’s Paper Award, “Yamaguchi Masahito Award”
Atsuhisa Izumi, Kyoto University (Japan)
Design of UV LEDs based on ultrathin GaN quantum wells emitting below 240 nm
Co-authors: K. Shojiki, M. Funato, Y. Kawakami
Atsuhisa Izumi, Kyoto University (Japan)
Design of UV LEDs based on ultrathin GaN quantum wells emitting below 240 nm
Co-authors: K. Shojiki, M. Funato, Y. Kawakami
Po-Wen Wang, National Yang Ming Chiao Tung University (Taiwan)
Low Level Light Device Combined with Electromagnetic Fields for Alopecia Therapy
Co-authors: C.Y. Liu
Po-Wen Wang, National Yang Ming Chiao Tung University (Taiwan)
Low Level Light Device Combined with Electromagnetic Fields for Alopecia Therapy
Co-authors: C.Y. Liu
Yugo Oki, Hokkaido University (Japan)
Deep and Shallow Etching of AlGaN/GaN Heterostructures using Contactless Photo-electrochemical (CL-PEC) Technique
Co-authors: T. Togashi, N. Shiozawa, R. Ochi, T. Sato
Yugo Oki, Hokkaido University (Japan)
Deep and Shallow Etching of AlGaN/GaN Heterostructures using Contactless Photo-electrochemical (CL-PEC) Technique
Co-authors: T. Togashi, N. Shiozawa, R. Ochi, T. Sato
LEDIA 2022 Paper Award Winners
LEDIA 2022 Paper Award Winners
Young Researcher’s Paper Award
Young Researcher’s Paper Award
Kengo Nagata, Nagoya University/Toyoda Gosei Co., Ltd. (Japan)
Potential distribution analysis of AlGaN homojunction tunnel junction by electron holography
Co-authors: S. Anada3, Y. Saito2, M. Kushimoto1, Y. Honda1, T. Takeuchi4, K. Yamamoto3, T. Hirayama3,1, H. Amano1
1.Nagoya University, Japan
2.Toyoda Gosei Co., Ltd., Japan
3.Japan Fine Ceramics Center, Japan
4.Meijo University, Japan
Kengo Nagata, Nagoya University/Toyoda Gosei Co., Ltd. (Japan)
Potential distribution analysis of AlGaN homojunction tunnel junction by electron holography
Co-authors: S. Anada3, Y. Saito2, M. Kushimoto1, Y. Honda1, T. Takeuchi4, K. Yamamoto3, T. Hirayama3,1, H. Amano1
1.Nagoya University, Japan
2.Toyoda Gosei Co., Ltd., Japan
3.Japan Fine Ceramics Center, Japan
4.Meijo University, Japan
Student’s Paper Award, “Yamaguchi Masahito Award”
Student’s Paper Award, “Yamaguchi Masahito Award”
Karolina Grabianska, Institute of High Pressure Physics, PAS (Poland)
On stress induced polarization effect in ammonothermally-grown GaN crystals
Co-authors: R. Kucharski, T. Sochacki, M. Bockowski
Karolina Grabianska, Institute of High Pressure Physics, PAS (Poland)
On stress induced polarization effect in ammonothermally-grown GaN crystals
Co-authors: R. Kucharski, T. Sochacki, M. Bockowski
Shogo Washida, Osaka University (Japan)
Dependence of crystallinity of GaN crystals grown by the Na flux point seed technique on the off-angle of the seed substrate
Co-authors: R. Tandryo, K. Murakami, M. Imanishi, S. Usami, M. Maruyama, M. Yoshimura, Y. Mori
Shogo Washida, Osaka University (Japan)
Dependence of crystallinity of GaN crystals grown by the Na flux point seed technique on the off-angle of the seed substrate
Co-authors: R. Tandryo, K. Murakami, M. Imanishi, S. Usami, M. Maruyama, M. Yoshimura, Y. Mori
Iori Kobayashi, Tokyo University of Agriculture and Technology (Japan)
Influence of intermediate layer on the growth of InGaN on ScAlMgO4 through tri-halide vapor phase epitaxy
Co-authors: R. Hieda, H. Murata, H. Murakami
Iori Kobayashi, Tokyo University of Agriculture and Technology (Japan)
Influence of intermediate layer on the growth of InGaN on ScAlMgO4 through tri-halide vapor phase epitaxy
Co-authors: R. Hieda, H. Murata, H. Murakami
Bhavpreeta Pratap Charan, Osaka University (Japan)
Analysis of Helical Dislocations observed in HVPE GaN grown on Na-Flux GaN substrate
Co-authors: R. Tandryo, M. Imanishi, K. Murakami, S. Usami, M. Maruyama, M. Yoshimura, Y. Mori
Bhavpreeta Pratap Charan, Osaka University (Japan)
Analysis of Helical Dislocations observed in HVPE GaN grown on Na-Flux GaN substrate
Co-authors: R. Tandryo, M. Imanishi, K. Murakami, S. Usami, M. Maruyama, M. Yoshimura, Y. Mori
PAPER AWARD
PAPER AWARD
A few papers will be selected for the “Paper Award” for young researcher. Around 10 papers will be nominated for the award based on the program committee’s ratings of the abstracts. The paper award will be judged from their presentations and announced at the closing to be held on the last day.
Student’s Paper Award, “Yamaguchi Masahito Award”
Student’s Paper Award, “Yamaguchi Masahito Award”
Yamaguchi Masahito, Ph. D, Associate Professor, Nagoya University, Steering Committee Member of LEDIA’13. He passed away in July, 2013, at the age of 45. We inherited his will to educate students and established Student’s Paper Award with the financial aid of MUTSUMI CORPORATION.
Successive Award Winners
Successive Award Winners
LEDIA'19
LEDIA'19
Young Researcher’s Paper Award
Young Researcher’s Paper Award
Kenjiro Uesugi, Mie University (Japan)
Threading Dislocation Reduction of Sputter-Deposited AlN Templates for Deep-Ultraviolet Light-Emitting Device Applications
Co-authors: Y. Hayashi, K. Shojiki, H. Miyake , Mie Univ., Japan
Kenjiro Uesugi, Mie University (Japan)
Threading Dislocation Reduction of Sputter-Deposited AlN Templates for Deep-Ultraviolet Light-Emitting Device Applications
Co-authors: Y. Hayashi, K. Shojiki, H. Miyake , Mie Univ., Japan
Student’s Paper Award, “Yamaguchi Masahito Award”
Student’s Paper Award, “Yamaguchi Masahito Award”
Yoshinobu Matsuda, Kyoto University (Japan)
Exploring the Growth Procedures for Polar-Plane-Free Faceted InGaN-LED Structures
Co-authors: M. Funato, Y. Kawakami, Kyoto Univ., Japan
Yoshinobu Matsuda, Kyoto University (Japan)
Exploring the Growth Procedures for Polar-Plane-Free Faceted InGaN-LED Structures
Co-authors: M. Funato, Y. Kawakami, Kyoto Univ., Japan
Asahi Yamauchi, Osaka University (Japan)
Fabrication of Transverse Quasi-Phase-Matched Polarity-Inverted Stacked AlN Waveguide by Surface-Activated Bonding and Silicon Removal
Co-authors: S. Yamaguchi1, T. Onodera1, Y. Hayashi2, H. Miyake2, K. Shiomi1, Y. Fujiwara1, T. Hikosaka3, S. Nunoue3, M. Uemukai1, R. Katayama1
1 Osaka Univ., Japan
2 Mie Univ. Japan
3 Toshiba Corp. Japan
Asahi Yamauchi, Osaka University (Japan)
Fabrication of Transverse Quasi-Phase-Matched Polarity-Inverted Stacked AlN Waveguide by Surface-Activated Bonding and Silicon Removal
Co-authors: S. Yamaguchi1, T. Onodera1, Y. Hayashi2, H. Miyake2, K. Shiomi1, Y. Fujiwara1, T. Hikosaka3, S. Nunoue3, M. Uemukai1, R. Katayama1
1 Osaka Univ., Japan
2 Mie Univ. Japan
3 Toshiba Corp. Japan
Chun-Sheng Wu, National Cheng Kung University (Taiwan)
Optically Pumped Single-Mode Lasing Action in Cesium Lead Halide Perovskite Individual Microspheres
Co-authors: B.-L. Jian, H.-C. Hsu, National Cheng Kung Univ., Taiwan
Chun-Sheng Wu, National Cheng Kung University (Taiwan)
Optically Pumped Single-Mode Lasing Action in Cesium Lead Halide Perovskite Individual Microspheres
Co-authors: B.-L. Jian, H.-C. Hsu, National Cheng Kung Univ., Taiwan
LEDIA'18
LEDIA'18
Young Researcher’s Paper Award
Young Researcher’s Paper Award
Johannes Glaab, Ferdinand-Braun-Institut (Germany)
Degradation of electro-optical parameters and electromigration of hydrogen in (In)AlGaN-based UVB LEDs
Co-authors: J. Ruschel1, T. Kolbe1, A. Knauer1, J. Rass1, N. L. Ploch1, M. Weyers1, M. Kneissl1,2, S. Einfeldt1
1Ferdinand-Braun-Institut, Germany,
2Technische Univ. Berlin, Germany
Johannes Glaab, Ferdinand-Braun-Institut (Germany)
Degradation of electro-optical parameters and electromigration of hydrogen in (In)AlGaN-based UVB LEDs
Co-authors: J. Ruschel1, T. Kolbe1, A. Knauer1, J. Rass1, N. L. Ploch1, M. Weyers1, M. Kneissl1,2, S. Einfeldt1
1Ferdinand-Braun-Institut, Germany,
2Technische Univ. Berlin, Germany
Student’s Paper Award, “Yamaguchi Masahito Award”
Student’s Paper Award, “Yamaguchi Masahito Award”
Yuya Inatomi, Kyushu University (Japan)
Formation mechanism of singular structure in AlInN layer grown on m-GaN substrate by MOVPE
Co-authors: A. Kusaba1, Y. Kangawa1,2,3, K. Kojima4, S. F. Chichibu4,3
1Dept. Aeronautics and Astronautics, Kyushu Univ., Japan
2RIAM, Kyushu Univ., Japan
3IMaSS, Nagoya Univ., Japan
4IMRAM, Tohoku Univ., Japan
Yuya Inatomi, Kyushu University (Japan)
Formation mechanism of singular structure in AlInN layer grown on m-GaN substrate by MOVPE
Co-authors: A. Kusaba1, Y. Kangawa1,2,3, K. Kojima4, S. F. Chichibu4,3
1Dept. Aeronautics and Astronautics, Kyushu Univ., Japan
2RIAM, Kyushu Univ., Japan
3IMaSS, Nagoya Univ., Japan
4IMRAM, Tohoku Univ., Japan
So Kusumoto, Osaka University (Japan)
GaAsP Tunable Single-Mode Semiconductor Laser using Periodically Slotted Structure with Simplified Fabrication Process
Co-authors: M. Uemukai, R. Katayama Osaka Univ., Japan
So Kusumoto, Osaka University (Japan)
GaAsP Tunable Single-Mode Semiconductor Laser using Periodically Slotted Structure with Simplified Fabrication Process
Co-authors: M. Uemukai, R. Katayama Osaka Univ., Japan
LEDIA'17
LEDIA'17
Young Researcher’s Paper Award
Young Researcher’s Paper Award
Narihito Okada, Yamaguchi University (Japan)
Fabrication of idiosyncratic GaN structures by ICP-RIE with enhanced chemical etching conditions and its applications
Co-authors: K. Nojima1, N. Ishibashi1, K. Nagatoshi1, N. Itagaki1, R. Inomoto1, S. Motoyama2, T. Kobayashi2, K. Tadatomo1
1Yamaguchi Univ., Japan,
2SAMCO Inc., Japan
Narihito Okada, Yamaguchi University (Japan)
Fabrication of idiosyncratic GaN structures by ICP-RIE with enhanced chemical etching conditions and its applications
Co-authors: K. Nojima1, N. Ishibashi1, K. Nagatoshi1, N. Itagaki1, R. Inomoto1, S. Motoyama2, T. Kobayashi2, K. Tadatomo1
1Yamaguchi Univ., Japan,
2SAMCO Inc., Japan
Student’s Paper Award, “Yamaguchi Masahito Award”
Student’s Paper Award, “Yamaguchi Masahito Award”
Marcus Muller, Otto-von-Guericke-University Magdeburg (Germany)
Nano-scale correlation of the optical, structural, and compositional properties of InGaN/GaN core-shell nanorod LEDs
Co-authors: S. Metzner1, P. Veit1, F. Krause2, F. Bertram1, T. Schimpke3, A. Avramescu3, M. Strassburg3, A. Rosenaer2, J. Christen1
1Otto-von-Guericke-Univ. Magdeburg, Germany
2Univ. Bremen, Germany
3OSRAM Opto Semiconductors GmbH, Germany
Marcus Muller, Otto-von-Guericke-University Magdeburg (Germany)
Nano-scale correlation of the optical, structural, and compositional properties of InGaN/GaN core-shell nanorod LEDs
Co-authors: S. Metzner1, P. Veit1, F. Krause2, F. Bertram1, T. Schimpke3, A. Avramescu3, M. Strassburg3, A. Rosenaer2, J. Christen1
1Otto-von-Guericke-Univ. Magdeburg, Germany
2Univ. Bremen, Germany
3OSRAM Opto Semiconductors GmbH, Germany
Naoki Takeda, Osaka University (Japan)
Effect of gaseous carbon addition in GaN crystal growth by Na-flux method
Co-authors: M. Imanishi, K. Murakami, M. Hayashi, M. Imade, M. Yoshimura, Y. Mori
Osaka Univ., Japan
Naoki Takeda, Osaka University (Japan)
Effect of gaseous carbon addition in GaN crystal growth by Na-flux method
Co-authors: M. Imanishi, K. Murakami, M. Hayashi, M. Imade, M. Yoshimura, Y. Mori
Osaka Univ., Japan
LEDIA'16
LEDIA'16
Young Researcher’s Paper Award
Young Researcher’s Paper Award
S.-Y. Bae, Nagoya University (Japan)
Controlled Growth of Highly Elongated GaN Nanorod Arrays on AlN/Si Templates by Pulsed-Mode Metalorganic Vapor Deposition
Co-authors: K. Lekhal1,2, B. O. Jung1, D.-S. Lee3, M. Deki2, Y. Honda2, H. Amano2,4
1Dept. of Electrical Eng. and Computer Sci., Nagoya University, Japan
2Inst. of Materials and Systems for Sustainability, Nagoya University, Japan
3Gwangju Inst. of Sci. and Tech., Korea, 4Akasaki Research Center, Nagoya Univ., Japan
S.-Y. Bae, Nagoya University (Japan)
Controlled Growth of Highly Elongated GaN Nanorod Arrays on AlN/Si Templates by Pulsed-Mode Metalorganic Vapor Deposition
Co-authors: K. Lekhal1,2, B. O. Jung1, D.-S. Lee3, M. Deki2, Y. Honda2, H. Amano2,4
1Dept. of Electrical Eng. and Computer Sci., Nagoya University, Japan
2Inst. of Materials and Systems for Sustainability, Nagoya University, Japan
3Gwangju Inst. of Sci. and Tech., Korea, 4Akasaki Research Center, Nagoya Univ., Japan
C. Reich, Technical Univ. Berlin (Germany)
Strongly TE-Polarized Emission from Deep UV AlGaN Quantum Well LEDs
Co-authors: M. Feneberg2, M. Guttmann1, T. Wernicke1, F. Mehnke1, M. Kneissl1
1Technical Univ. Berlin, Germany
2Otto-von-Guericke-Univ. Magdeburg, Germany
C. Reich, Technical Univ. Berlin (Germany)
Strongly TE-Polarized Emission from Deep UV AlGaN Quantum Well LEDs
Co-authors: M. Feneberg2, M. Guttmann1, T. Wernicke1, F. Mehnke1, M. Kneissl1
1Technical Univ. Berlin, Germany
2Otto-von-Guericke-Univ. Magdeburg, Germany
Student’s Paper Award, “Yamaguchi Masahito Award”
Student’s Paper Award, “Yamaguchi Masahito Award”
K. Matsui, Meijo University (Japan)
GaN-based VCSELs using Periodic Gain Structures
Co-authors: K. Ikeyama1, T. Furuta1, Y. Kozuka1, T. Akagi1, T. Takeuchi1, S. Kamiyama1, M. Iwaya1, I. Akasaki1,2
1Meijo Univ., Japan
2Akasaki Research Center, Nagoya Univ., Japan
K. Matsui, Meijo University (Japan)
GaN-based VCSELs using Periodic Gain Structures
Co-authors: K. Ikeyama1, T. Furuta1, Y. Kozuka1, T. Akagi1, T. Takeuchi1, S. Kamiyama1, M. Iwaya1, I. Akasaki1,2
1Meijo Univ., Japan
2Akasaki Research Center, Nagoya Univ., Japan
S. Stanczyk, Institute of High Pressure Physics, PAS (Poland)
Opto-electrical Properties of Tapered (Al,In)GaN Laser Diodes
Co-authors: A. Kafar1, A. Nowakowska-Siwinska2, I. Makarowa2, M. Sarzynski1,2, J. Walczak3, R. Sarzala3, T. Suski1, P. Perlin1,2
1IHPP, PAS, Poland
2TopGaN Ltd., Poland, 3Inst. of Physics, Lodz Univ. of Tech., Poland
S. Stanczyk, Institute of High Pressure Physics, PAS (Poland)
Opto-electrical Properties of Tapered (Al,In)GaN Laser Diodes
Co-authors: A. Kafar1, A. Nowakowska-Siwinska2, I. Makarowa2, M. Sarzynski1,2, J. Walczak3, R. Sarzala3, T. Suski1, P. Perlin1,2
1IHPP, PAS, Poland
2TopGaN Ltd., Poland, 3Inst. of Physics, Lodz Univ. of Tech., Poland
LEDIA'15
LEDIA'15
Young Researcher’s Paper Award
Young Researcher’s Paper Award
Tomasz Sochacki, Institute of High Pressure Physics, PAS (Poland)
State of the Art of Hydride Vapor Phase Epitaxy on Ammonothermally Grown GaN Seeds
Co-authors: M. Amilusik1,2, M. Fijalkowski1, B. Lucznik1,2, M. Iwinska1, G. Kamler1, R. Kucharski3, I. Grzegory1, M. Bockowski1,2
1IHPP, PAS, Poland
2TopGaN Sp. z o.o., Poland, 3Ammono, Poland
Tomasz Sochacki, Institute of High Pressure Physics, PAS (Poland)
State of the Art of Hydride Vapor Phase Epitaxy on Ammonothermally Grown GaN Seeds
Co-authors: M. Amilusik1,2, M. Fijalkowski1, B. Lucznik1,2, M. Iwinska1, G. Kamler1, R. Kucharski3, I. Grzegory1, M. Bockowski1,2
1IHPP, PAS, Poland
2TopGaN Sp. z o.o., Poland, 3Ammono, Poland
Student’s Paper Award, “Yamaguchi Masahito Award”
Student’s Paper Award, “Yamaguchi Masahito Award”
Malgorzata Iwinska, Institute of High Pressure Physics, PAS (Poland)
HVPE-GaN Growth on GaN-Based Advanced Substrate by Smart CutTM
Co-authors: M. Amilusik1,2, M. Fijalkowski1, T. Sochacki1,2, B. Lucznik1,2, P. Guenard3, R. Caulmilone3, A. Nowakowska-Siwinska2, I. Grzegory1, M. Bockowski1,2
1IHPP, PAS, Poland
2TopGaN Sp. z o.o., Poland
3Soitec, France
Malgorzata Iwinska, Institute of High Pressure Physics, PAS (Poland)
HVPE-GaN Growth on GaN-Based Advanced Substrate by Smart CutTM
Co-authors: M. Amilusik1,2, M. Fijalkowski1, T. Sochacki1,2, B. Lucznik1,2, P. Guenard3, R. Caulmilone3, A. Nowakowska-Siwinska2, I. Grzegory1, M. Bockowski1,2
1IHPP, PAS, Poland
2TopGaN Sp. z o.o., Poland
3Soitec, France
Kanako Shojiki, Tohoku University (Japan)
Influence of V/III Ratio and Layer Thicknesses on MOVPE-Grown N-Polar (000-1) InGaN Multiple Quantum Wells
Co-authors: J. H. Choi1, T. Tanikawa1,2, S. Kuboya1, T. Hanada1,2, R. Katayama1, T. Matsuoka1,2
1Tohoku Univ., Japan
2CREST, JST, Japan
Kanako Shojiki, Tohoku University (Japan)
Influence of V/III Ratio and Layer Thicknesses on MOVPE-Grown N-Polar (000-1) InGaN Multiple Quantum Wells
Co-authors: J. H. Choi1, T. Tanikawa1,2, S. Kuboya1, T. Hanada1,2, R. Katayama1, T. Matsuoka1,2
1Tohoku Univ., Japan
2CREST, JST, Japan
LEDIA'14
LEDIA'14
Young Researcher’s Paper Award
Young Researcher’s Paper Award
Ryan G. Banal (NTT Corporation, Japan)
Nonpolar M-Plane AlGaN Deep-UV LEDs
Co-authors: Y. Taniyasu, H. Yamamoto (NTT Corp., Japan)
Ryan G. Banal (NTT Corporation, Japan)
Nonpolar M-Plane AlGaN Deep-UV LEDs
Co-authors: Y. Taniyasu, H. Yamamoto (NTT Corp., Japan)
Tomoyuki Tanikawa (Tohoku University , Japan)
Realization of p-Type Conduction in Mg-Doped N-Polar (000-1) GaN Grown by Metalorganic Vapor Phase Epitaxy
Co-authors: J. H. Choi1,2, K. Shojiki1, S. Kuboya1, R. Katayama1,2, T. Matsuoka1,2
1Tohoku Univ., Japan
2CREST, JST, Japan
Tomoyuki Tanikawa (Tohoku University , Japan)
Realization of p-Type Conduction in Mg-Doped N-Polar (000-1) GaN Grown by Metalorganic Vapor Phase Epitaxy
Co-authors: J. H. Choi1,2, K. Shojiki1, S. Kuboya1, R. Katayama1,2, T. Matsuoka1,2
1Tohoku Univ., Japan
2CREST, JST, Japan
Student’s Paper Award, “Yamaguchi Masahito Award”
Student’s Paper Award, “Yamaguchi Masahito Award”
Anna Kafar, (Institute of High Pressure Physics, PAS, Poland)
Optimization of InGaN Superluminescent Diodes: State of the Art Devices and an Analysis of Their Limiting Factors
Co-authors: S. Stanczyk1, G. Targowski2,3, P. Wisniewski1, T. Suski1, U.T. Schwarz4, P. Perlin1
1IHPP, PAS, Poland
2TopGAN Sp. Z o.o, Polnad
3Fraunhofer Institute for Applied Solid State Physics IAF, Germany
4Freiburg Univ., Germany
Anna Kafar, (Institute of High Pressure Physics, PAS, Poland)
Optimization of InGaN Superluminescent Diodes: State of the Art Devices and an Analysis of Their Limiting Factors
Co-authors: S. Stanczyk1, G. Targowski2,3, P. Wisniewski1, T. Suski1, U.T. Schwarz4, P. Perlin1
1IHPP, PAS, Poland
2TopGAN Sp. Z o.o, Polnad
3Fraunhofer Institute for Applied Solid State Physics IAF, Germany
4Freiburg Univ., Germany
Tadashi Mitsunari, Nagoya University (Japan)
Growth Optimization of Green InGaN Multi-Quantum Well on Bulk GaN Substrate by In Situ Monitoring System
Co-authors: A. Tamura1, S. Usami1, M. Kushimoto1, K. Yamashita1, Y. Honda1, Y. Lacronix3, H. Amano1,2
1Nagoya Univ., Japan
2Akasaki Research Center, Nagoya Univ., Japan
3YSystems Ltd., Japan
Tadashi Mitsunari, Nagoya University (Japan)
Growth Optimization of Green InGaN Multi-Quantum Well on Bulk GaN Substrate by In Situ Monitoring System
Co-authors: A. Tamura1, S. Usami1, M. Kushimoto1, K. Yamashita1, Y. Honda1, Y. Lacronix3, H. Amano1,2
1Nagoya Univ., Japan
2Akasaki Research Center, Nagoya Univ., Japan
3YSystems Ltd., Japan
LEDIA'17
LEDIA'17
Young Researcher’s Paper Award
Young Researcher’s Paper Award
Narihito Okada, Yamaguchi University (Japan)
Fabrication of idiosyncratic GaN structures by ICP-RIE with enhanced chemical etching conditions and its applications
Co-authors: K. Nojima1, N. Ishibashi1, K. Nagatoshi1, N. Itagaki1, R. Inomoto1, S. Motoyama2, T. Kobayashi2, K. Tadatomo1
1Yamaguchi Univ., Japan,
2SAMCO Inc., Japan
Narihito Okada, Yamaguchi University (Japan)
Fabrication of idiosyncratic GaN structures by ICP-RIE with enhanced chemical etching conditions and its applications
Co-authors: K. Nojima1, N. Ishibashi1, K. Nagatoshi1, N. Itagaki1, R. Inomoto1, S. Motoyama2, T. Kobayashi2, K. Tadatomo1
1Yamaguchi Univ., Japan,
2SAMCO Inc., Japan
Student’s Paper Award, “Yamaguchi Masahito Award”
Student’s Paper Award, “Yamaguchi Masahito Award”
Marcus Muller, Otto-von-Guericke-University Magdeburg (Germany)
Nano-scale correlation of the optical, structural, and compositional properties of InGaN/GaN core-shell nanorod LEDs
Co-authors: S. Metzner1, P. Veit1, F. Krause2, F. Bertram1, T. Schimpke3, A. Avramescu3, M. Strassburg3, A. Rosenaer2, J. Christen1
1Otto-von-Guericke-Univ. Magdeburg, Germany
2Univ. Bremen, Germany
3OSRAM Opto Semiconductors GmbH, Germany
Marcus Muller, Otto-von-Guericke-University Magdeburg (Germany)
Nano-scale correlation of the optical, structural, and compositional properties of InGaN/GaN core-shell nanorod LEDs
Co-authors: S. Metzner1, P. Veit1, F. Krause2, F. Bertram1, T. Schimpke3, A. Avramescu3, M. Strassburg3, A. Rosenaer2, J. Christen1
1Otto-von-Guericke-Univ. Magdeburg, Germany
2Univ. Bremen, Germany
3OSRAM Opto Semiconductors GmbH, Germany
Naoki Takeda, Osaka University (Japan)
Effect of gaseous carbon addition in GaN crystal growth by Na-flux method
Co-authors: M. Imanishi, K. Murakami, M. Hayashi, M. Imade, M. Yoshimura, Y. Mori
Osaka Univ., Japan
Naoki Takeda, Osaka University (Japan)
Effect of gaseous carbon addition in GaN crystal growth by Na-flux method
Co-authors: M. Imanishi, K. Murakami, M. Hayashi, M. Imade, M. Yoshimura, Y. Mori
Osaka Univ., Japan