프로그램
세션 1
10:00 - 10:15 개회
10:15 - 10:40 (초청강연) The Significance of Scale-Bridging Atomistic Simulations and Their Industrial Applications for Angstrom Nodes, 권의희 (삼성전자)
10:40 - 11:05 (초청강연) Physics-Informed Graph Neural Surrogate for MOSFET Electrostatics and Id-Vg Transfer Characteristics with Imbalanced Dopant Profiles, 김성윤/오동연 (시높시스/하이닉스)
11:05 - 11:30 (초청강연) AI-physics for semiconductor process and device modeling, 조현보 (Alsemy)
11:30 - 11:55 (초청강연) Bridging Materials, Devices, and Experiments through Advanced Computational Methods,
윤영기 (Univ. of Waterloo, Canada)
중식
11:55 - 13:30
세션 2
13:30 - 13:55 (초청강연) First-Principles Electron–Phonon Interactions for Charge Transport and Beyond, 박진수
(POSTECH)
13:55 - 14:20 (초청강연) Understanding point defects in oxide semiconductors, 강영호 (인천대학교)
14:20 - 14:45 High-Throughput Prediction of Energy Level Alignment in van der Waals Heterostructures Using a Generalized Linear-Response Model, 이승준 (경희대학교)
14:45 - 15:00 Mechanisms of HfSe2 layer-by-layer oxidation and clean van der Waals interface formation with 2D semiconductors: First-principles molecular dynamics simulation study, 박준호 (KAIST)
15:00 - 15:15 Methodology for ML-based compact modeling of RRAM with cycle-to-cycle variation using a 3-block model,
홍기용 (UNIST)
포스터 세션
15:15 - 16:30
세션 3
16:30 - 16:55 (초청강연) Semi-Classical Monte Carlo Carrier Transport Simulation for Advanced Devices and Emerging Materials, 장지원 (연세대학교)
16:55 - 17:20 (초청강연) A Device-to-Array Simulation Framework for DTCO of 4F 2 DRAM, 이재현 (부산대학교)
17:20 - 17:35 Exploration of Metallic Compounds for Next-Generation Interconnects, 맹경호 (인천대)
17:35 - 17:50 Layer-Dependent Strain Engineering of Electron Transport in MoS₂ and WS₂ Investigated by First-Principles and Full-Band Monte Carlo Methods, 강성우 (연세대)
17:50 - 18:05 Large-Scale Three-Dimensional Quantum Transport Simulations of Nanosheet FETs, 이승진 (KAIST)
18:05 Closing
포스터 리스트
순번 이름 소속 제목
1 오헌석 KAIST QBS-Assisted Gate Leakage Analysis in GaN Devices Using Three-Terminal 2D NEGF
2 장민서 GIST Investigation of Complementary FET with Direct Backside Contact in the Logic Device
3 김지영 GIST Thermodynamically Consistent 1D Drift-Diffusion Simulation of Carbon Nanotube FETs Using Generalized Scharfetter-Gummel Scheme Based on Adaptive Tanh-Sinh Quadrature
4 정수민 GIST Calibration of Monolayer MoS2 and WSe2 Nanosheet FETs Using Experimental Data and Interface Trap Characterization
5 김동현 부산대학교 Bit-line Contact Resistance Reduction in 4F2 DRAM Using Wrap-Around Contact and Selective Epitaxial Growth
6 홍성윤 인천대학교 Electron emission from VN–H traps for 3D NAND reliability
7 주현수 GIST Extraction of BSIM-CMG Parameters for CFET
8 유일한 KAIST In2O3 Grain boundary limited resistivity and mobility calculation based on Density Functional Theory
9 노경원 KAIST DFT–NEGF-Based Analysis of Alloy-Scattering-Limited Mobility and Carrier Transport in SiGe Alloys
10 김주석 KAIST Neural-Network-Based Quantum Transport Simulations of Cation-Disordered c-IGZO
11 정양진 KAIST Antiferroelectric-Based Advanced 4-coupled Phase-Field Simulations of AFeRAM and AFeFET with Strain Effects
12 이석기 UNIST Dimensionless Rescaling for Out-of-Range PDE Field Prediction
13 김규빈 GIST Process emulation of a staggered CFET structure for improved middle-of-line routing
14 한동연 GIST A Hierarchical Process Flow Management System via Scoped Resource Inheritance for DTCO Frameworks
15 권예한 GIST SPICE-Based Analysis of IGZO TFT 6T1C Synaptic Cells for Analog In-Memory Computing
16 최근석 KAIST Neural-Network Tight-Binding Molecular Dynamics for Large-Scale Atomistic Simulations
17 이의호 연세대학교 Semi-Classical Monte Carlo Simulation of Contact Geometry Effect on Source/Drain Junction Resistance in N- Type Si Fin and Nanosheet FETs
18 이동혁 연세대학교 Full-Band Semi-Classical Monte Carlo Study of Layer-Dependent Hole Transport in MoS₂, WS₂, and WSe₂
19 김나윤 연세대학교 Inner Spacer Effects on Stress and Parasitic Capacitance in Gate-All-Around FETs: A TCAD Framework Using Kinetic Monte Carlo Epitaxy
20 권민재 연세대학교 First-Principles Assessment of Structural Stability and Via Conductance of Liner-Less Diffusion Barrier Using Co– N and Mo–N Binary Compounds
21 임민수 연세대학교 Stability and Variability Analysis of Si CMOS-Compatible Ternary SRAM Enabled by Drain-Side Resistance Engineering
22 정주환 부산대학교 Comparative Study of Contact Resistivity Effects on the Performance of GAA Nanosheet and FinFET Devices
23 문정재 부산대학교 Performance Enhancement of Nanosheet FETs Using a Dual-Channel Architecture
24 이동찬 연세대학교 DFT and MD Analysis of Al-Doping Effects on Oxygen Vacancy Formation and Local Oxygen Dynamics in HfO2 Based RRAM
25 임창민 연세대학교 Structural and Electronic Effects of C/N Doping in Amorphous GeTe Phase-Change Materials
26 윤석형 연세대학교 Exploring Thickness-Dependent Resistivity of B20-Type Chiral Topological Semimetals Using a DFT–Wannier– Kubo Framework
27 강현준 KAIST Ab initio non-equilibrium calculations of WSe2 p-n junctions
28 이정원 KAIST Low-temperature behavior of quantum hybridization negative differential resistance from one-dimensional halide perovskite