ASR Lab - Publications

ASR Lab

International Journals

2025

(* indicates corresponding author)

MJ Kim, H-M Lee, Y Jeong, and JY Kwak*, “Emerging Neuromorphic Devices-Compatible SNN Hardware with Adaptive STDP and Validation Using Novel CMOS Neuron-Synapse Circuits,” IEEE Access, Vol.13, 173739-173751 (2025) [link] (IF: 3.6)
MJ Kim, H-M Lee, Y Jeong, and JY Kwak*, “Spiking Neural Network-Based Bidirectional Associative Learning Circuit for Efficient Multibit Pattern Recall in Neuromorphic Systems,” Electronics, 14(19), 3971 (2025) [link] (IF: 2.6)
D Kim, S Park, Y Jeong, J Kim, S Lee, JY Kwak, HJ Jang, I Kim, J-K Kim, and J Park, “Real-time Large-scale Neural Connectivity Inference on Spiking Neuromorphic System,” IEEE Transactions on Neural Systems and Rehabilitation Engineering, vol. 33, 2781-2792 (2025) [link] (IF: 5.2, JCR: 2.0%)
G Noh, J Kim, DY Woo, M Kim, H Yoo, HB Jeong, Y Jo, E Park, M-k Jo, E Moon, IS Kim, TS Kasirga, DH Ha, SY Kim, GW Hwang, S Kim, C-H Lee, H Yang, HY Jeong, K Kang*, and JY Kwak*, “Electrolyte-free potassium ions intercalated in 2D layered metal oxide for imitating spatiotemporal biological neural dynamics,” Materials Today, vol. 85, 27-38 (2025) [link] (IF: 22.0, JCR: 3.8%)
JG Lim, SM Lee, S-j Park, JY Kwak, Y Jeong, J Kim, S Lee, J Park, GW Hwang, K-S Lee, S Park, B-K Ju, HJ Jang, JK Park, and I Kim, “Design of CMOS-memristor hybrid synapse and its application for noise-tolerant memristive spiking neural network,” Frontiers in Neuroscience, 19:1516971 (2025) [link] (IF: 3.2)
S Kim, S Oh, SJ Kwak, G Noh, M Choi, J Lee, Y Kim, M Kim, TS Kim, M-k Jo, WB Lee, J Yoo, YJ Hong, S Song, JY Kwak*, Y Kim*, HY Jeong*, and K Kang*, “Sequential multidimensional heteroepitaxy of chalcogen-sharing 3D ZnSe and 2D MoSe2 with quasi van der Waals interface engineering,” Science Advances, 11(8), eads4573 (2025) [link] (IF: 12.5, JCR: 8.5%)
(Selected as Front Cover) DK Lee, G Noh, S Oh, Y Jo, E Park, MJ Kim, DY Woo, H Wi, Y Jeong, HJ Jang, S Kim, S Lee, K Kang*, and JY Kwak*, “Crystallinity-Controlled Volatility Tuning of ZrO2 Memristor for Physical Reservoir Computing,” InfoMat, 7(2), e12635 (2025) [Front Cover][link] (IF: 22.3, JCR: 3.6%)
A Ham, W Ahn, J Oh, G Noh, S Oh, M Kang, H-J Chai, JY Kwak, S Seo, S-Y Choi, and K Kang, “Low-Temperature Chemical Solution Deposition of Bi2O2Se on Amorphous Surface for Dynamic Memristor of Physical Reservoir Array,” ACS Nano, 19(5), 5406–5417 (2025) [link] (IF: 16.0, JCR: 6.0%)
J Seok, JE Seo, DK Lee, JY Kwak*, and J Chang*, “Attoampere Level Leakage Current in Chemical Vapor Deposition-Grown Monolayer MoS2 Dynamic Random-Access Memory in Trap-Assisted Tunneling Limit,” ACS Nano, 19(2), 2458–2467 (2025) [link] (IF: 16.0, JCR: 6.0%)
DH Ha, G Noh, H Kim, DH Kim, J Kim, S Jung, C Hwang, HY Lee, YJ Yun, JY Kwak, K Kang, and SN Yi, “Raman spectroscopy study of K-birnessite single crystals,” Journal of Materials Chemistry A, 13(1), 617-626 (2025) [link] (IF: 9.5, JCR: 13.6%)

2024

JE Seo, M Gyeon, J Seok, S Youn, T Das, S Kwon, TS Kim, DK Lee, JY Kwak*, K Kang*, and J Chang*, “Improvement of Contact Resistance and Three-Dimensional Integration of Two-Dimensional Material Field-Effect Transistors Using Semi-metallic PtSe2 Contacts,” Advanced Functional Materials, 34(44), 2407382 (2024) [link] (IF: 19.0, JCR: 4.5%)
Y Jo, G Noh, E Park, DK Lee, Y Jeong, H Wi, and JY Kwak*, “Effects of Voltage Schemes on the Conductance Modulation of Artificial Synaptic Device Based on 2D hBN Memristor: Its Applications for Pattern Classifications,” Chaos, Solitons & Fractals, vol. 187, 115390 (2024) [link] (IF: 5.6, JCR: 0.8%)
DY Woo, G Noh, E Park, MJ Kim, DK Lee, YW Sung, J Kim, Y Jeong, J Park, S Park, HJ Jang, N Choi, Y Jo*, and JY Kwak*, “Implementation of two-step gradual reset scheme for enhancing state uniformity of 2D hBN-based memristors for image processing,” Neuromorphic Computing and Engineering, 4(3), 034001 (2024) [link] (IF: 6.1)
E Yang, S Hong, J Ma, S-J Park, DK Lee, T Das, T-J Ha*, JY Kwak*, and J Chang*, “Realization of Extremely High-Gain and Low-Power in nMOS Inverter Based on Monolayer WS2 Transistor Operating in Subthreshold Regime,” ACS Nano, 18(34), 22965–22977 (2024) [link] (IF: 16.0, JCR: 6.0%)
MM Islam, MDRM Arnob, A Ali, DY Woo, JY Kwak, and J Jang, “An Ultralow Subthreshold Swing of 28 mV dec–1 in Negative-Capacitance Thin-Film Transistors with Ferroelectric Zirconium–Aluminum Oxide Gate Oxide,” ACS Applied Electronic Materials, 6(8), 5489–5495 (2024) [link] (IF: 4.7)
TS Kim, G Noh, S Kwon, KP Dhakal, S Oh, H-J Chai, JY Kim, E Park, Y Kim, J Lee, M-k Jo, M Kang, C Park, J Kim, J Park, S Kim, M Kim, Y Kim, S-Y Choi, S Song, HY Jeong, J Kim*, JY Kwak*, and K Kang*, “Diffusion Control on the Van der Waals Surface of Monolayers for Uniform Bi-Layer MoS2 Growth,” Advanced Functional Materials, 34(23), 2312365 (2024) [link] (IF: 19.0, JCR: 4.5%)
DG Jeong, E Park, Y Jo, E Yang, G Noh, DK Lee, MJ Kim, Y Jeong, HJ Jang, DJ Joe, J Chang*, and JY Kwak*, “Grain boundary control for high-reliability HfO2-based RRAM,” Chaos, Solitons & Fractals, vol. 183, 114956 (2024) [link] (IF: 5.6, JCR: 0.8%)
Y Jo, M Kim, E Park, G Noh, G Hwang, Y Jeong, J Kim, J Park, S Park, H Jang, and JY Kwak*, “A study on pattern classifications with MoS2-based CTF synaptic device,” Journal of Alloys and Compounds, vol. 982, 173699 (2024) [link] (IF: 6.3, JCR: 10.9%)
MM Islam, A Ali, C Park, T Lim, DY Woo, JY Kwak, and J Jang, “Transistors with ferroelectric ZrXAl1−XOY crystallized by ZnO growth for multi-level memory and neuromorphic computing,” Communications Materials, 5(1), 51 (2024) [link] (IF: 9.6, JCR: 13.2%)
(Editor's Pick) E Park, DY Woo, G Noh, Y Jo, DK Lee, J Park, J Kim, Y Jeong, S Park, HJ Jang, N Choi, S Kim, and JY Kwak*, “IGZO Charge Trap Flash Device for Reconfigurable Logic Functions,” Applied Physics Letters, 124(12), 123501 (2024) [link] (IF: 3.6)
J Park, SJ Kwak, S Kang, S Oh, B Shin, G Noh, TS Kim, C Kim, H Park, SH Oh, W Kang, N Hur, H-J Chai, M Kang, S Kwon, J Lee, Y Lee, E Moon, C Shi, J Lou, WB Lee, JY Kwak, H Yang, T-M Chung, T Eom, J Suh, Y Han, HY Jeong, Y Kim, and K Kang, “Area-selective atomic layer deposition on 2D monolayer lateral superlattices,” Nature Communications, 15, 2138 (2024) [link] (IF: 15.7, JCR: 7.0%)
(Selected as Back Cover) Y Jo, DY Woo, G Noh, E Park, MJ Kim, YW Sung, DK Lee, J Park, J Kim, Y Jeong, S Lee, I Kim, J-K Park, S Park, and JY Kwak*, “Hardware Implementation of Network Connectivity Relationships using 2D hBN-based Artificial Neuron and Synaptic Devices,” Advanced Functional Materials, 34(10), 2309058 (2024) [Back Cover] [link] (IF: 19.0, JCR: 4.5%)
M Kang, HB Jeong, Y Shim, H-J Chai, Y-S Kim, M Choi, A Ham, C Park, M-k Jo, TS Kim, H Park, J Lee, G Noh, JY Kwak, T Eom, C-W Lee, S-Y Choi, JM Yuk, S Song, HY Jeong, and K Kang, “Layer-Controlled Growth of Single-Crystalline 2D Bi2O2Se Film Driven by Interfacial Reconstruction,” ACS Nano, 18(1), 819-828 (2024) [link] (IF: 16.0, JCR: 6.0%)

2023

E Park, S Jang, G Noh, Y Jo, DK Lee, IS Kim, H-C Song, S Kim*, and JY Kwak*, “Indium–Gallium–Zinc Oxide-Based Synaptic Charge Trap Flash for Spiking Neural Network-Restricted Boltzmann Machine,” Nano Letters, 23(20), 9626-9633 (2023) [link]
SW Cho, YW Lee, SH Kim, S Han, I Kim, J-K Park, JY Kwak, J Kim, Y Jeong, GW Hwang, KS Lee, S Park, and S Lee, “Reduction of carrier density and enhancement of the bulk Rashba spin-orbit coupling strength in Bi2Te3/GeTe superlattices,” Journal of Alloys and Compounds, vol. 957, 170444 (2023) [link]
T Lim, J Lee, DY Woo, JY Kwak, and J Jang, “Multifunctional Crystalline InGaSnO Phototransistor Exhibiting Photosensing and Photosynaptic Behavior Using Oxygen Vacancy Engineering,” Small Methods, 7(9), 2300251 (2023) [link]
K Kim, JG Lim, SM Hu, Y Jeong, J Kim, S Lee, JY Kwak, J Park, GW Hwang, K-S Lee, S Park, W-S Lee, B-K Ju, J-K Park and I Kim, “Multi-filamentary switching of Cu/SiOx memristive devices with a Ge-implanted a-Si under-layer for analog synaptic devices,” NPG Asia Materials, 15(48) (2023) [link]
Y Jo, JY Lee, E Park, H-S Kim, H-J Choi, S Mun, Y Kim, S Hur, JH Yoon, J-S Jang, C-Y Kang, SH Baek, JM Baik, JY Kwak*, and H-C Song*, “Epitaxial PZT Film-based Ferroelectric Field-Effect Transistors for Artificial Synapse,” ACS Applied Electronic Materials, vol 5, 8, 4549-4555 (2023) [link]
O Kiprijanovic, E Park, JY Kwak*, and L Ardaravicius*, “Generation of super high frequencies by graphene on piezoelectric buffer layer upon applied nanosecond electrical pulse,” AIP Advances, 13(6), 065205 (2023) [link]
Y Kim, H Jin, D Kim, P Ha, M-K Park, J Hwang, J Lee, J-M Woo, J Choi, C Lee, JY Kwak, and H Son, “Design of Synaptic Driving Circuit for TFT eFlash-Based Processing-In-Memory Hardware Using Hybrid Bonding,” Electronics, 12(3), 678 (2023) [link]
J Park, Y Jeong, J Kim, S Lee, JY Kwak, J-K Park, and I Kim, “High Dynamic Range Digital Neuron Core with Time-Embedded Floating-Point Arithmetic,” IEEE Transactions on Circuits and Systems I, 70(1), pp.290-301 (2023) [link]

2022

DJ Joe, E Park, DH Kim, I Doh, H-C Song* and JY Kwak*, “Graphene and Two-Dimensional Materials-Based Flexible Electronics for Wearable Biomedical Sensors,” Electronics, 12(1), 45 (2022) [link]
J Lee, SW Cho, YW Lee, JY Kwak, J Kim, Y Jeong, GW Hwang, S Park, S Kim, and S Lee, “Rational engineering of a switching material for the Ovonic threshold switching (OTS) device with mitigated electroforming,” Journal of Materials Chemistry C, 10(47), 18033-18039 (2022) [link]
E Park, JE Seo, G Noh, Y Jo, DY Woo, IS Kim, J Park, J Kim, Y Jeong, S Lee, I Kim, J-K Park, S Kim, J Chang* and JY Kwak*, “A pentagonal 2D layered PdSe2-based synaptic device with a graphene floating gate,” Journal of Materials Chemistry C, 10(43), 16536-16545 (2022) [link]
JE Seo, E Park, T Das, JY Kwak*, and J Chang*, “Demonstration of PdSe2 CMOS Using Same Metal Contact in PdSe2 n-/p-MOSFETs through Thickness-Dependent Phase Transition,” Advanced Electronic Materials, 8(11), 2200485 (2022) [link]
J-M Cho, H-J Lee, Y-J Ko, H-J Choi, Y-J Baik, GW Hwang, J-K Park, JY Kwak, J Kim, J Park, Y Jeong, I Kim, K-S Lee, and W-S Lee, “Bottom-up evolution of consolidated porous diamond layer by hot-filament-CVD,” Surfaces and Interfaces, vol 34, 102362 (2022) [link]
G Noh, H Song, H Choi, M Kim, JH Jeong, Y Lee, M-Y Choi, S Oh, M-k Jo, DY Woo, Y Jo, E Park, E Moon, TS Kim, H-J Chai, W Huh, C-H Lee, C-J Kim, H Yang, S Song, HY Jeong, Y-S Kim, G-H Lee, J Lim, CG Kim, T-M Chung*, JY Kwak*, and K Kang*, “Large Memory Window of van der Waals Heterostructure Devices Based on MOCVD-Grown 2D Layered Ge4Se9,” Advanced Materials, 34(41), 2204982 (2022) [link]
JU Kwon, YG Song, JE Kim, SY Chun, GH Kim, G Noh, JY Kwak, S Hur, C-Y Kang, DS Jeong, SJ Oh, and JH Yoon, “Surface-Dominated HfO2 Nanorods-based Memristor Exhibiting Highly Linear and Symmetrical Conductance Modulation for High Precision Neuromorphic Computing,” ACS Applied Materials & Interfaces, vol 14, 39, 44550-44560 (2022) [link]
Y-J Ko, MH Han, H Kim, J-Y Kim, WH Lee, J Kim, JY Kwak, BK Min, S-H Yu, W-S Lee, CH Choi, P Strasser, H-S Oh, “Unraveling Ni-Fe 2D nanostructure with enhanced oxygen evolution via in situ and operando spectroscopies,” Chem Catalysis, 2(9), 2312-2327 (2022) [link]
J Kang, T Kim, S Hu, J Kim, JY Kwak, J Park, JK Park, I Kim, S Lee, S Kim, and Y Jeong, “Cluster-type analogue memristor by engineering redox dynamics for high-performance neuromorphic computing,” Nature Communications, 13 (1), 1-10 (2022) [link]
M Kim, E Park, J Park, J Kim, Y Jeong, S Lee, I Kim, J-K Park, S-Y Park*, and JY Kwak*, “A triple-level cell charge trap flash memory device with CVD-grown MoS2,” Results in Physics, vol. 38, 105620 (2022) [link]
TS Kim, KP Dhakal, E Park, G Noh, H-J Chai, Y Kim, S Oh, M Kang, J Park, J Kim, S Kim, HY Jeong, S Bang*, JY Kwak*, J Kim*, and K Kang*, “Gas-Phase Alkali Metal-Assisted MOCVD Growth of 2D Transition Metal Dichalcogenides for Large-Scale Precise Nucleation Control,” Small, 18 (20), 2106368 (2022) [link]
Y Jo, K Mun, Y Jeong, JY Kwak, J Park, S Lee, I Kim, J-K Park, G-W Hwang and J Kim, “A Poisson Process Generator Based on Multiple Thermal Noise Amplifiers for Parallel Stochastic Simulation of Biochemical Reactions,” Electronics, 11(7), 1039 (2022) [link]
S Shin, DC Kang, K Kim, Y Jeong, J Kim, S Lee, JY Kwak, J Park, GW Hwang, K-S Lee, JK Park, J Li, and I Kim “Emulating the short-term plasticity of a biological synapse with a ruthenium complex-based organic mixed ionic–electronic conductor,” Materials Advances, 3(6), 2827-2837 (2022) [link]
J‐M Cho, Y‐J Ko, H‐J Lee, H‐J Choi, Y‐J Baik, J‐K Park, JY Kwak, J Kim, J Park, Y Jeong, I Kim, K‐S Lee, and W‐S Lee “Bottom–Up Evolution of Diamond–Graphite Hybrid Two-Dimensional Nanostructure: Underlying Picture and Electrochemical Activity,” Small, 18(8), 2105087 (2022) [link]
H Lee, SW Cho, SJ Kim, J Lee, KS Kim, I Kim, J-K Park, JY Kwak, J Kim, J Park, Y Jeong, GW Hwang, K-S Lee, D Ielmini, and S Lee “Three-Terminal Ovonic Threshold Switch (3T-OTS) with Tunable Threshold Voltage for Versatile Artificial Sensory Neurons,” Nano Letters, 22(2), 733-739 (2022) [link]
S Hu, J Kang, T Kim, S Lee, JK Park, I Kim, J Kim, JY Kwak, J Park, G-T Kim, S Choi, and Y Jeong “SPICE Study of STDP Characteristics in a Drift and Diffusive Memristor-Based Synapse for Neuromorphic Computing,” IEEE Access, Vol.10, 6381-6392 (2022) [link]

2021

K Kim, DC Kang, Y Jeong, J Kim, S Lee, JY Kwak, J Park, GW Hwang, K-S Lee, B-K Ju, JK Park, I Kim, “Ion beam-assisted solid phase epitaxy of SiGe and its application for analog memristors,” Journal of Alloys and Compounds, vol. 884, 161086 (2021) [link]
J Jeon, SW Cho, O Lee, J Hong, JY Kwak, S Han, S Jung, Y Kim, H-W Ko, S Lee, K-J Lee, HC Koo “Field-like spin-orbit torque induced by bulk Rashba channel in GeTe/NiFe bilayers” NPG Asia Materials, 13(76) (2021) [link]
JE Seo, T Das, E Park, D Seo, JY Kwak*, and J Chang*, “Polarity Control and Weak Fermi-Level Pinning in PdSe2 Transistor,” ACS Applied Materials & Interfaces, 13(36), 43480-43488 (2021) [link]
D Seo, JE Seo, T Das, JY Kwak*, and J Chang*, “Gate-Controlled Rectifying Direction in PdSe2 Lateral Heterojunction Diode,” Advanced Electronic Materials, 7(6), 2100005 (2021) [link]
M Kang, H-J Chai, HB Jeong, C Park, I-Y Jung, E Park, MM Cicek, I Lee, B-S Bae, E Durgun, JY Kwak, S Song, S-Y Choi, HY Jeong, K Kang, “Low-Temperature and High-Quality Growth of Bi2O2Se Layered Semiconductors via Cracking Metal−Organic Chemical Vapor Deposition,” ACS Nano, 15(5), 8715-8723 (2021) [link]
O Kiprijanovic, L Ardaravicius, and JY Kwak, “High-voltage carrier transport measurements in graphene and MoS2,” Results in Physics, vol. 24, 104156 (2021) [link]
T Kim, S Hu, J Kim, JY Kwak, J Park, S Lee, I Kim, J-K Park, and Y Jeong, “Spiking Neural Network (SNN) with memristor synapses having non-linear weight update,” Frontiers in Computational Neuroscience, 15: 646125 (2021) [link]
BM Kwak and JY Kwak*, “Binary NCP: A New Approach for Solving Nonlinear Complementarity Problems,” Journal of Mechanical Science and Technology, 35(3), 1161-1166 (2021) [link]
L Ardaravicius, O Kiprijanovic, HA Alsalman, and JY Kwak, “Self-heating controlled current-voltage and noise characteristics in graphene,” Journal of Physics D: Applied Physics, 54, 185101 (2021) [link]
H-S Park, J Park, JY Kwak, G-W Hwang, D-S Jeong, and K-S Lee, “Novel nano-plasmonic sensing platform based on vertical conductive bridge,” Scientific Reports, 11(1), pp.1-8 (2021) [link]
M Kim, E Park, IS Kim, J Park, J Kim, Y Jeong, S Lee, I Kim, J-K Park, T-Y Seong, and JY Kwak*, “A Comparison Study on Multilayered Barrier Oxide Structure in Charge Trap Flash for Synaptic Operation,” Crystals, 11(1), 70 (2021) [link]
T Das, E Yang, JE Seo, JH Kim, E Park, M Kim, D Seo, JY Kwak*, and J Chang*, “Doping-Free All PtSe2 Transistor via Thickness-Modulated Phase Transition,” ACS Applied Materials & Interfaces, 13(1), 1861-1871 (2021) [link]
JY Kwak and S-Y Park, “Compact Continuous Time Common-Mode Feedback Circuit for Low-Power, Area-Constrained Neural Recording Amplifiers,” Electronics, 10(2), 145 (2021) [link]

2020

E Park, M Kim, TS Kim, IS Kim, J Park, J Kim, Y Jeong, S Lee, I Kim, J-K Park, GT Kim, J Chang*, K Kang*, and JY Kwak*, “A 2D material-based floating gate device with linear synaptic weight update,” Nanoscale, 12(48), 24503 (2020) [link]
K Kim, S Park, SM Hu, J Song, W Lim, Y Jeong, J Kim, S Lee, JY Kwak, J Park, JK Park, B-K Ju, DS Jeong, and I Kim, “Enhanced analog synaptic behavior of SiN x/a-Si bilayer memristors through Ge implantation,” NPG Asia Materials, 12(1), 1-13 (2020) [link]
C Song, G Noh, TS Kim, M Kang, H Song, A Ham, M-K Jo, S Cho, H-J Chai, SR Cho, K Cho, J Park, S Song, I Song, S Bang, JY Kwak*, and K Kang*, “Growth and Interlayer Engineering of 2D Layered Semiconductors for Future Electronics,” ACS Nano, 14(12), 16266 (2020) [link]
T Kim, H Son, I Kim, J Kim, S Lee, JK Park, JY Kwak, J Park, and Y Jeong, “Reversible switching mode change in Ta2O5-based resistive switching memory (ReRAM),” Scientific reports, 10(1), pp.1-9 (2020) [link]
M Lee, SW Cho, SJ Kim, JY Kwak, H Ju, Y Yi, B Cheong, S Lee, “Simple Artificial Neuron Using an Ovonic Threshold Switch Featuring Spike-Frequency Adaptation and Chaotic Activity,” Physical Review Applied, 13(6), p.064056 (2020) [link]
PU Kelkar, HS Kim, K-H Cho, JY Kwak, C-Y Kang, and H-C Song, "Cellular Auxetic Structures for Mechanical Metamaterials: A Review," Sensors, 20, no. 11, 3132 (2020) [link]

2019

HS Lee, JY Kwak, TY Seong, GW Hwang, WM Kim, I Kim, and KS Lee, “Optimization of tunable guided-mode resonance filter based on refractive index modulation of graphene,” Scientific Reports, 9(1), pp.1-11 (2019) [link]
JY Kwak*, "Absorption Coefficient estimation of thin MoS2 film using Attenuation of Silicon Substrate Raman Signal," Results in Physics, vol. 13, 102202 (2019) [link]
J Park, IW Yeu, G Han, C Jang, JY Kwak, CS Hwang, and J-H Choi, "Optical control of the layer degree of freedom through Wannier-Stark states in polar 3R MoS2," Journal of Physics: Condensed Matter, vol. 31, 315502 (2019) [link]
V Kornijcuk, J Park, G Kim, D Kim, I Kim, J Kim, JY Kwak, and DS Jeong, "Reconfigurable Spike Routing Architectures for On‐Chip Local Learning in Neuromorphic Systems," Advanced Materials Technologies, vol. 4, no. 1 (2019) [link]

~ 2018

H Alsalman, J Hwang, M Kim, D Campbell, JY Kwak, B Calderon, Y Ji, S Gorantla, A Bachmatiuk, M Rϋmmeli, and MG Spencer, “Synthesis of large area AB stacked bilayer graphene by SiC epitaxy and transfer,” Nano Futures, vol. 2, 035001 (2018) [link]
JY Kwak*, J Hwang, B Calderon, H Alsalman, and MG Spencer, “Long Wavelength Optical Response of Graphene-MoS2 Heterojunction,” Applied Physics Letters, 108(9), 091108 (2016) [link]
JY Kwak*, J Hwang, B Calderon, H Alsalman, N Munoz, B Schutter, and MG Spencer, “Electrical Characteristics of Multilayer MoS2 FET’s with MoS2/Graphene Heterojunction Contacts,” Nano Letters, vol. 14, pp. 4511-4516 (2014) [link]
S Gorantla, A Bachmatiuk, J Hwang, H Alsalman, JY Kwak, T Seyller, J Eckert, MG Spencer and M Rummeli, “A universal transfer route for graphene,” Nanoscale, vol. 6, pp. 889-896 (2014) [link]
L Ardaravicius, J Liberis, E Sermuksnis, A Matulionis, J Hwang, JY Kwak, D Campbell, HA Alsalman, LF Eastman, and MG Spencer, “High frequency noise of epitaxial graphene grown on sapphire,” Physica Status Solidi (RRL)-Rapid Research Letters, vol. 7, pp. 348-351 (2013) [link]
J Hwang, M Kim, D Campbell, HA Alsalman, JY Kwak, S Shivaraman, AR Woll, AK Singh, RG Hennig, S Gorantla, MH Rummeli, and MG Spencer, “van der Waals Epitaxial Growth of Graphene on Sapphire by Chemical Vapor Deposition without a Metal Catalyst,” ACS Nano, vol. 7, pp. 385-395 (2012) [link]
YH Kang, JK Kim, SW Hwang, JY Kwak, et al, “High-Voltage Analog System for a Mobile NAND Flash,” IEEE Journal of Solid-State Circuits, vol. 43, pp. 507-517 (2008) [link]

Korean Journal Articles

Y Jo, E Park, and JY Kwak*, “Recent research trends of emerging material-based artificial neuromorphic devices and artificial neural networks,” The Magazine of the IEIE, The Institute of Electronics and Information Engineers (IEIE), vol.51 no.3:178-189 (2024) [link]
Y Jo, D Lee, and JY Kwak*, “Recent Progress in Development of Artificial Neuromorphic Devices Based on Emerging Materials,” Ceramist, The Korean Ceramic Society, 25(4):454-474 (2022) [link]
G Noh and JY Kwak*, “Recent research trends of ferroelectric-based synaptic devices,” Electrical & Electronic Materials (E2M), The Korean Institute of Electrical and Electronic Material Engineers (KIEEME), vol.34, no.5 (2021) [link]

Conference Proceedings and Abstracts

(ICAE Student Award) DK Lee, G Noh, S Oh, Y Jo, E Park, MJ Kim, H Wi, R Choi, HJ Jang, S Kim, S Lee, and JY Kwak*, “Design of Crystallized Memristors with Controllable Threshold Switching for Reservoir Computing,” The 8th International Conference on Advanced Electromaterials (ICAE 2025), Jeju, Korea, 25-28 Nov 2025
R Choi and JY Kwak*, “IGZO charge-trap flash (CTF) memory device with its SPICE modeling,” Summer Annual Conference of ISE (ISE conference 2025), Yeosu, Korea, 13-16 Jul 2025
Y Jo, G Noh, E Park, DK Lee, H Wi, and JY Kwak*, “Development of a Random Bit Generator using Threshold Switching Memristor based on 2D hBN for Data Encryption,” 2025 Asia-Pacific Workshop on Advanced Semiconductor Devices (AWAD 2025), Nara, Japan, 3-4 Jul 2025
DK Lee, G Noh, S Oh, Y Jo, E Park, MJ Kim, H Wi, R Choi, HJ Jang, S Kim, S Lee, and JY Kwak*, “Enhancing Threshold Switching Performance of Electrochemical Metallization-Based Memristors for Reservoir Computing,” 2025 Asia-Pacific Workshop on Advanced Semiconductor Devices (AWAD 2025), Nara, Japan, 3-4 Jul 2025
H Wi, E Park, R Choi, DK Lee, MJ Kim, and JY Kwak*, “Improved Synaptic Linearity and Classification Accuracy in IGZO Floating Gate Transistor via Multi-Scheme Voltage Programming,” The 23rd International Nanotech Conference & Exhibition (NANO KOREA 2025), Goyang, Korea, 2-4 Jul 2025
R Choi, E Park, H Wi, DK Lee, MJ Kim, and JY Kwak*, “Fabrication and Compact Modeling of IGZO-Based CTF Devices,” The 23rd International Nanotech Conference & Exhibition (NANO KOREA 2025), Goyang, Korea, 2-4 Jul 2025
DK Lee, G Noh, S Oh, Y Jo, E Park, MJ Kim, H Wi, R Choi, HJ Jang, S Kim, S Lee, and JY Kwak*, “Reservoir Computing with ECM TS Memristors: Crystallization-Driven Localized Filament Path Control for STM Activation,” The 23rd International Nanotech Conference & Exhibition (NANO KOREA 2025), Goyang, Korea, 2-4 Jul 2025
Y Yu, R Choi, C Lee, HL Choi, H Wi, DK Lee, MJ Kim, and JY Kwak*, “Memtransistor SPICE Model for Neuromorphic Systems,” Summer Annual Conference of IEIE (IEIE conference 2025), Jeju, Korea,24-27 Jun 2025
R Choi, E Park, H Wi, DK Lee, MJ Kim, and JY Kwak*, “IGZO-Based Charge Trap Flash (CTF) Memory: From Fabrication to Device Modeling,” 2025 Korean Physical Society Spring Meeting (KPS 2025), Daejeon, Korea, 23-25 Apr 2025
JY Kwak*, “Neuromorphic devices and circuit interfaces,” Samsung Global Technology Conference (Samsung GTC 2025), Seoul, Korea, 22-23 Apr 2025
DK Lee, G Noh, S Oh, Y Jo, E Park, MJ Kim, H Wi, R Choi, HJ Jang, S Kim, S Lee, and JY Kwak*, “Modulating Volatility via Crystallization in ECM-based ZrO2 Memristor for Reservoir Computing,” The 32nd Korean Conference on Semiconductors (KCS 2025), Gangwon, Korea, 12-14 Feb 2025
H Wi, E Park, R Choi, DK Lee, MJ Kim, and JY Kwak*, “IGZO and Pt-based Floating Gate Memory for Synaptic Device with Implementing Various Voltage Schemes,” The 32nd Korean Conference on Semiconductors (KCS 2025), Gangwon, Korea, 12-14 Feb 2025
MJ Kim, J Im, K Kim, Y Jo, G Noh, E Park, DK Lee, I Kim, Y Jeong, H-M Lee, and JY Kwak*, “Neuromorphic Hardware Design with Emerging Material-based Neuron and Synaptic Devices for On-chip STDP Learning,” The 32nd Korean Conference on Semiconductors (KCS 2025), Gangwon, Korea, 12-14 Feb 2025
R Choi, E Park, H Wi, DK Lee, MJ Kim, and JY Kwak*, “Study of IGZO-based CTF memory with state updates in array,” The 32nd Korean Conference on Semiconductors (KCS 2025), Gangwon, Korea, 12-14 Feb 2025
E Park, Y Jo, G Noh, MJ Kim, DK Lee, S Kim, Y Jeong, and JY Kwak*, “Demonstration of Logic Gates and Neuromorphic Synaptic Behaviors using IGZO-based Flash Memory,” The 8th International Conference on Electronic Materials and Nanotechnology for Green Environment (ENGE 2024), Jeju, Korea, 24-27 Nov 2024
DK Lee, G Noh, Y Jo, E Park, MJ Kim, H Wi, HY Jang, and JY Kwak*, “Modulating Volatility through Crystallinity Control in ECM-based ZrO2 Memristor,” The 8th International Conference on Electronic Materials and Nanotechnology for Green Environment (ENGE 2024), Jeju, Korea, 24-27 Nov 2024
(Outstanding Student Paper Award) R Choi, E Park, H Wi, DK Lee, MJ Kim, and JY Kwak*, “IGZO-based Charge Trap Flash (CTF) device with memory state updates in array,” Fall Annual Conference of IEIE (IEIE conference 2024), Gangwon, Korea, 22-23 Nov 2024 [link]
H Wi, E Park, R Choi, DK Lee, MJ Kim, and JY Kwak*, “Development of a floating gate FET with IGZO and Pt for synaptic device,” Fall Annual Conference of IEIE (IEIE conference 2024), Gangwon, Korea, 22-23 Nov 2024 [link]
(Conference Grant Award) MJ Kim, J Im, K Kim, Y Jo, G Noh, I Kim, Y Jeong, H-M Lee, and JY Kwak*, “Adaptive SNN Neuromorphic Hardware for Interfacing between Emerging Neuron and Synaptic Devices,” IEEE Biomedical Circuits and Systems Conference (IEEE BioCAS 2024), Xi’an, China, 24-26 Oct 2024 [link]
Y Jo, G Noh, E Park, MJ Kim, DK Lee, H Wi, and JY Kwak*, “Impact of Synaptic Weight Variations on the Connection Strength between Artificial Neurons Based on 2D hBN Threshold Switching Memristors,” 2024 Asia-Pacific Workshop on Advanced Semiconductor Devices (AWAD 2024), Gangneung, Korea, 7-10 Jul 2024
DK Lee, G Noh, Y Jo, E Park, MJ Kim, H Wi, and JY Kwak*, “Tunable Volatility in Crystallinity-Controlled ECM-based ZrO2 Memristors,” 2024 Asia-Pacific Workshop on Advanced Semiconductor Devices (AWAD 2024), Gangneung, Korea, 7-10 Jul 2024
JY Kwak*, “Convergence Researches in Neuromorphic Devices,” The 21st International Symposium on the Physics of Semiconductors and Applications (ISPSA 2024), Jeju, Korea, 3 Jun 2024
JY Kwak*, “Neuromorphic Electronic Devices using 2D materials,” 2024 Korean Physical Society Spring Meeting (KPS 2024), Daejeon, Korea, 23-26 Apr 2024
DK Lee, G Noh, Y Jo, E Park, MJ Kim, YW Sung, DY Woo, and JY Kwak*, “Implementation of Threshold Switching in ZrO2 Memristor through Crystallization,” The 31st Korean Conference on Semiconductors (KCS 2024), Gyeongju, Korea, 24-26 Jan 2024
E Park, DY Woo, DK Lee, G Noh, Y Jo, J Park, J Kim, Y Jeong, S Lee, I Kim, J-K Park, S Park, HJ Jang, S Kim, and JY Kwak*, “Indium-Gallium-Zinc-Oxide CTF-Based Reconfigurable Logic Gates,” The 31st Korean Conference on Semiconductors (KCS 2024), Gyeongju, Korea, 24-26 Jan 2024
Y Jo, G Noh, E Park, MJ Kim, YW Sung, DY Woo, DK Lee, and JY Kwak*, “Investigation of Connection Strength Modulation between the Artificial Neuron Devices based on 2D hBN Threshold Switching RRAM,” 2023 MRS Fall Meeting (MRS 2023), Boston MA, USA, 26 Nov-1 Dec 2023
G Noh, J Kim, HB Jeong, Y Jo, M-k Jo, E Moon, M Kim, E Park, C-H Lee, HY Jeong, K Kang, and JY Kwak*, “Electrically Driven Ion Dynamics with Negative Differential Resistance in Alkali Ions Intercalated 2D-Layered Metal Oxide,” 2023 MRS Fall Meeting (MRS 2023), Boston MA, USA, 26 Nov-1 Dec 2023
JY Kwak*, “Neuromorphic Devices based on 2D Materials for SNN,” 2023 Korean Physical Society Fall Meeting (KPS 2023), Changwon, Korea, 25-27 Oct 2023
JY Kwak*, “2D Materials-based Three-Terminal Synaptic Devices for Spiking Neural Network,” The 65th Korean Vacuum Society Summer Annual Conference 2023 (KVS 2023), Jeju, Korea, 20-23 Aug 2023
(Young Researcher Poster Award) E Park, S Jang, G Noh, Y Jo, DK Lee, IS Kim, H-C Song, S Kim, and JY Kwak*, “Synaptic Flash Memory with Indium-Gallium-Zinc Oxide Channel,” 2023 Asia-Pacific Workshop on Advanced Semiconductor Devices (AWAD 2023), Yokohama, Japan, 10-11 Jul 2023
G Noh, H Song, H Choi, M Kim, S Oh, DY Woo, M-k Jo, Y Jo, E Moon, TS Kim, H-J Chai, E Park, JH Jeong, Y Lee, M-Y Choi, W Huh, C-H Lee, C-J Kim, H Yang, HY Jeong, G-H Lee, T-M Chung, K Kang*, and JY Kwak*, “Large Hysteresis Window of van der Waals Heterostructure Devices Based on MOCVD-Grown 2D Layered Ge4Se9 for an Artificial Synapse,” Advanced Epitaxy for Freestanding Membranes and 2D Materials (AEFM 2023), Seoul, Korea, 10-12 Jul 2023
DY Woo, Y Jo, G Noh, E Park, MJ Kim, DK Lee, YW Sung, JH Lee, J Na, N Choi, and JY Kwak*, “Implementation of Convolutional Kernel using 2D hBN RRAM,” The 21st International Nanotech Symposium (NANO KOREA 2023), Goyang, Korea, 5-7 Jul 2023
JY Kwak*, “Three-Terminal Synaptic Devices using 2D Materials for Neuromorphic Systems,” The 23rd IEEE International Conference on Nanotechnology (IEEE NANO 2023), Jeju, Korea, 2-5 Jul 2023
YW Sung, E Park, Y Jo, G Noh, MJ Kim, DY Woo, DK Lee, GT Kim, and JY Kwak*, “An Artificial Neuron Circuit-based Neural Network using a Programmable Unijunction Transistor,” Summer Annual Conference of IEIE (IEIE conference 2023), Jeju, Korea, 28-30 Jun 2023 [link]
JY Kwak*, “Neuromorphic Synaptic Devices based on 2D Materials,” Summer Annual Conference of IEIE (IEIE Conference 2023), Jeju, Korea, 28-30 Jun 2023
Y Jo, G Noh, E Park, MJ Kim, YW Sung, DY Woo, DK Lee, and JY Kwak*, “Development of 2D hBN Threshold Switching RRAM for Low Power Artificial Neuron,” Global Conference of Innovation Materials (GCIM 2023), Jeju, Korea, 6-9 Jun 2023
JY Kwak*, “2D Materials-based Synaptic Devices for Neuromorphic Systems,” 2023 Spring Meeting of the Korean Ceramic Society (KCerS 2023), Jeju, Korea, 12-14 Apr 2023
Y Jo, G Noh, E Park, MJ Kim, YW Sung, DY Woo, DK Lee, DG Ryu, and JY Kwak*, “Development of Artificial Neuron using 2D hBN for Neuromorphic Applications,” The 30th Korean Conference on Semiconductors (KCS 2023), Gangwon, Korea, 13-15 Feb 2023
G Noh, H Song, H Choi, M Kim, S Oh, DY Woo, Y Jo, E Park, M-k Jo, E Moon, Y-S Kim, HY Jeong, TM Chung, K Kang*, and JY Kwak*, “Large Memory Window with High Synaptic Performance of van der Waals Heterostructure Devices Based on 2D Layered Ge4Se9,” The 30th Korean Conference on Semiconductors (KCS 2023), Gangwon, Korea, 13-15 Feb 2023
E Park, JE Seo, G Noh, Y Jo, IS Kim, J Park, J Kim, Y Jeong, S Lee, I Kim, J-K Park, S Kim, J Chang*, and JY Kwak*, “Emulation of synaptic behavior using pentagonal PdSe2-based flash memory,” The 30th Korean Conference on Semiconductors (KCS 2023), Gangwon, Korea, 13-15 Feb 2023
(Best Poster Award) Y Jo, G Noh, E Park, MJ Kim, YW Sung, DY Woo, DK Lee, and JY Kwak*, “2D hBN-based RRAM for Artificial Neuron in Neuromorphic Applications,” The 7th International Conference on Electronic Materials and Nanotechnology for Green Environment (ENGE 2022), Jeju, Korea, 7-9 Nov 2022
G Noh, J Kim, Y Jo, E Park, M-k Jo, DY Woo, MJ Kim, K Kang, and JY Kwak*, “Emerging Potassium Ion Intercalated Layered Metal Oxide (2D K-MnO2) for Artificial Synaptic Device,” The 7th International Conference on Electronic Materials and Nanotechnology for Green Environment (ENGE 2022), Jeju, Korea, 7-9 Nov 2022
E Park, Y Jo, G Noh, MJ Kim, YW Sung, DY Woo, DK Lee, IS Kim, S Kim, J Chang, H-C Song, and JY Kwak*, “Indium Gallium Zinc Oxide based Flash Memory for a Neuromorphic Synaptic Device,” The 7th International Conference on Electronic Materials and Nanotechnology for Green Environment (ENGE 2022), Jeju, Korea, 7-9 Nov 2022
JY Kwak*, “Emerging Synaptic Memory Devices for Neuromorphic Systems,” The 7th International Conference on Electronic Materials and Nanotechnology for Green Environment (ENGE 2022), Jeju, Korea, 7-9 Nov 2022
E Park, JE Seo, G Noh, Y Jo, IS Kim, J Park, J Kim, Y Jeong, S Lee, I Kim, J-K Park, S Kim, J Chang*, and JY Kwak*, “Synaptic Floating Gate Memory based on Palladium Diselenide (PdSe2),” The 20th International Symposium on the Physics of Semiconductors and Applications (ISPSA 2022), Jeju, Korea, 17-21 Jul 2022
Y Jo, G Noh, E Park, MJ Kim, YW Sung, DY Woo, DK Lee, and JY Kwak*, “Leaky Integrate and Fire Neuron Based on 2D-hBN Threshold Switching RRAM Device for Neuromorphic Applications,” The 20th International Symposium on the Physics of Semiconductors and Applications (ISPSA 2022), Jeju, Korea, 17-21 Jul 2022
G Noh, H Song, H Choi, S Oh, JH Young, J Lim, T-M Chung, K Kang*, and JY Kwak*, “MOCVD Growth of 2D Germanium Selenide for van der Waals Heterostructure with Large Memory Window,” The 20th International Symposium on the Physics of Semiconductors and Applications (ISPSA 2022), Jeju, Korea, 17-21 Jul 2022
Y Jo, G Noh, E Park, MJ Kim, YW Sung, DY Woo, DK Lee, and JY Kwak*, “2D hBN-based Threshold Switching RRAM Device for Artificial Neuron,” 2022 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2022), Virtual Conference, Busan, Korea, 7-8 Jul 2022
(Young Researcher Award) E Park, JE Seo, G Noh, Y Jo, IS Kim, J Chang*, and JY Kwak*, “Artificial Synaptic Floating Gate Memory based on Palladium Diselenide (PdSe2),” 2022 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2022), Virtual Conference, Busan, Korea, 7-8 Jul 2022
G Noh, J Kim, E Park, Y Jo, DY Woo, MJ Kim, YW Sung, HR Rasouli, TS Kasirga, K Kang*, and JY Kwak*, “An Emerging Material for Synaptic Device: Alkali Ion Intercalated Layered Metal Oxide,” The 20th International Nanotech Symposium (NANO KOREA 2022), Goyang, Korea, 6-8 Jul 2022
E Park, IS Kim, J Park, J Kim, Y Jeong, S Lee, I Kim, J Park, J Chang, K Kang, and JY Kwak*, “Flash-type Synaptic Device based on 2D materials for Linear Synaptic Weight Update,” 2022 Spring Conference of Korean Sensors Society, Seoul, Korea, 4-6 Apr 2022
E Park, G Noh, MJ Kim, T Kim, YW Sung, D Woo, IS Kim, S Kim, J Chang, H-C Song, and JY Kwak*, “Charge Trap Flash based on IGZO for a Synaptic Device,” The 29th Korean Conference on Semiconductors (KCS 2022), Gangwon, Korea, 24-26 Jan 2022
G Noh, J Kim, E Park, Y Jo, HR Rasouli, M-K Jo, TS Kasirga, K Kang, and JY Kwak*, “Ion-based Synaptic Device of Alkali Ion Intercalated 2D Metal Oxide,” The 29th Korean Conference on Semiconductors (KCS 2022), Gangwon, Korea, 24-26 Jan 2022
Y Jo, E Park, G Noh, J Park, J Kim, Y Jeong, S Lee, I Kim, J-K Park, and JY Kwak*, “ “Non-Volatile RRAM based on Single-layer hBN for Artificial Synapse,” The 29th Korean Conference on Semiconductors (KCS 2022), Gangwon, Korea, 24-26 Jan 2022
E Park, G Noh, IS Kim, J Chang, K Kang, and JY Kwak*, “A Floating Gate Synaptic Device based on Two-dimensional Materials,” The 12th Recent Progress in Graphene and Two-dimensional Materials Research Conference (RPGR 2021), Online & Offline Hybrid Conference, Seoul, Korea, 10-14 Oct 2021
G Noh, J Kim, E Park, HR Rasouli, N Mehmood, A Sheraz, M-K Jo, TS Kasirga, K Kang, and JY Kwak*, “A Synaptic Device Based on Electrical Phase Change of Spontaneous Potassium Ion Intercalated MnO2,” The 12th Recent Progress in Graphene and Two-dimensional Materials Research Conference (RPGR 2021), Online & Offline Hybrid Conference, Seoul, Korea, 10-14 Oct 2021
E Park, G Noh, IS Kim, J Chang, K Kang, and JY Kwak*, “Two-dimensional Materials-based Floating Gate Memory Device for Linear Synaptic Weight Update,” 2021 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2021), Virtual Conference, Japan, 26-27 Aug 2021
G Noh, J Kim, E Park, HR Rasouli, N Mehmood, A Sheraz, M-K Jo, TS Kasirga, K Kang, and JY Kwak*, “Ionic Memristive Behavior of Spontaneous Potassium Ion Intercalated Layered MnO2 for Synaptic Device,” 2021 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2021), Virtual Conference, Japan, 26-27 Aug 2021
JY Kwak*, “Flash-type Synaptic Device with Improved Nonlinear Weight Updates,” The 28th Korean Conference on Semiconductors (KCS 2021), Virtual Conference, 25-29 Jan 2021
M Kim, E Park, IS Kim, J Park, J Kim, Y Jeong, S Lee, I Kim, J Park, T-Y Seong, J Chang, K Kang, and JY Kwak*, “Artificial Synapse Based on CTF Memory with High Coupling Ratio,” The 6th International Conference on Electronic Materials and Nanotechnology for Green Environment (ENGE 2020), Jeju, Korea, 21-24 Nov 2020
E Park, M Kim, IS Kim, J Park, J Kim, Y Jeong, S Lee, I Kim, J Park, GT Kim, J Chang, K Kang, and JY Kwak*, “Study of Linear Synaptic Weight Update in 2D Based Floating Gate Memory,” The 6th International Conference on Electronic Materials and Nanotechnology for Green Environment (ENGE 2020), Jeju, Korea, 21-24 Nov 2020
JY Kwak*, “Improvement of nonlinear weight update in three-terminal artificial synapse device,” 2020 Korean Physical Society Spring Meeting (KPS 2020), Virtual Conference, 13-15 Jul 2020
JY Kwak*, “Characteristics of multilayer MoS2 and graphene hetero junction structure,” 2018 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2018), Kitakyushu, Japan, 2-4 Jul 2018
JY Kwak*, J Hwang, B Calderon, H Alsalman, B Schutter, and MG Spencer, “Photothermal Electric Effect of Multilayer MoS2-Graphene Heterojunction,” Device Research Conference (DRC 2015) 73rd Annual, pp. 121–122, 21–24 June 2015 [link]
JY Kwak*, J Hwang, M Graham, H Alsalman, N Munoz, B Calderon, B Schutter, and MG Spencer, “Study of Electrical and Optical Characteristics of Multilayer MoS2-Graphene Hetero-Junction,” The 8th International Conference on the Fundamental Science of Graphene and Applications of Graphene-Based Devices (Graphene Week 2014), Gothenburg, Sweden, 23–27 June 2014
JY Kwak* and MG Spencer, “Graphene/MoS2 Heterojunctions FET's for Broad Band Phototransistors,” The 50th Annual Workshop on Compound Semiconductor Materials and Devices (WOCSEMMAD 2014), San Antonio TX, USA, 16–19 Feb 2014
JY Kwak*, J Hwang, M Graham, H Alsalman, N Munoz, B Calderon, D Campbell, and MG Spencer, “A High Response MoS2-Graphene Hetero-Junction Photodetector with Broad Spectral Range,” Device Research Conference (DRC 2013) 71st Annual, vol. Supplement, no., pp. 1–2, 23–26 June 2013 [link]

Patents

U.S (Registered): US7990129, US8040736, US8138741, US8355279, US11431291, US11544541, US11800705, US12050992, US12210960, US12340840, US12468927
U.S (Pending): 17/579400, 17/615394, 18/073146, 17/872558, 17/990333
Korea (Registered): 10-1391928, 10-1504342, 10-1511762, 10-1616100, 10-1618944, 10-1991041, 10-2214451, 10-2301041, 10-2355611, 10-2355612, 10-2358221, 10-2358622, 10-2380584, 10-2380970, 10-2402253, 10-2402255, 10-2424887, 10-2473622, 10-2495823, 10-2514931, 10-2517217, 10-2520746, 10-2529528, 10-2532530, 10-2577937, 10-2594232, 10-2594829, 10-2615194, 10-2624400
Korea (Pending): 10-2021-0168412, 10-2021-0171120, 10-2022-0022196, 10-2024-0012928

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