Muthukumar R, Sanmugavel. S, Aravinth K, Balaji Bhargav P, Ramasamy P, Kesavan V, 2023, Numerical simulation approach to investigate the effect of gas tube design on the impurity distribution and thermal properties of multi-crystalline silicon ingot grown by directional solidification process. Journal of Crystal Growth, vol. 603, pp.127001.
Madhesh. R, Srinivasan M, Muthukumar R, Kesavan V, Ramasamy P, 2022, Novel chemical texturizing process in Boron–doped As-cut multi-crystalline silicon wafer for increasing the optical properties. Applied Surface Science Advances, vol. 12, pp.100225.
Aravindan, G., Sanmugavel, S., Nagarajan, S.G., Kesavan. V, Srinivasan, M. and Ramasamy, P., 2022. Influence of Back Contact Annealing Temperature in the mc-Si Solar Cell Fabrication Process. Silicon, 14(15), pp.9751-9762.
Sivaraj, D., Kesavan. V, Keerthivasan, T., Kumar, M.A., Srinivasan, M. and Ramasamy, P., 2022. Investigation of orientation, surface morphology, impurity concentration and reflectivity of the multi-crystalline silicon wafers. Materials Chemistry and Physics, 282, p.125932.
Raji, M., Kesavan. V, Manikkam, S. and Perumalsamy, R., 2022. Surface Texturing of the Multi Crystalline Silicon Wafers Using Novel Non-Toxic Chemical Composition. Silicon, 14(15), pp.9987-9995.
Raji, M., Kesavan. V, Chen, J.C., Manikkam, S. and Perumalsamy, R., 2022. The Influence of Heat Flux Control Unit for Improving the Multi-Crystalline Silicon Ingot for Photovoltaic Application. Silicon, 14(18), pp.12437-12445.
Kesavan. V, Srinivasan, M, Ramasamy, P 2019, ‘Numerical investigation of Directional Solidification process for improving multi-crystalline silicon ingot quality for Photovoltaic applications’,Materials Letters, vol. 241, pp. 180-183.
Kesavan. V, Srinivasan, M, Ramasamy, P 2019, ‘Optimizing Oxygen Impurities using different heater design in the Directional Solidification of Multi-Crystalline Silicon’, Mater. Res. Express, 6(10), p.106323.
Kesavan. V, Srinivasan, M, Ramasamy, P 2019, Optimization of heat transfer properties of the directional solidification furnace by modifying heat exchanger blocks, Mater. Res. Express, v6(11), p.115921.
Kesavan. V, Srinivasan, M, Ramasamy, P 2018, ‘The influence of multiple-heaters on the reduction of impurities in mc-Si for directional solidification’, Silicon, vol. 11, pp. 1335-1344.
Nagarajan S. G, Sanmugavel. S, Aravindan. G, Kesavan. V, Srinivasan. M, Ramasamy. P, 2019, Influence of additional insulation block on multi-crystalline silicon ingot growth process for PV applications, Journal of Crystal Growth, 516, pp.10-16.
Sanmugavel. S, Aravindan. G, Nagarajan S. G, Kesavan. V, Ramasamy. P, 2020, Simulation and Experimental Approach to Investigate the Annealing Effect on mc-Si Ingot Grown by Directional Solidification Process for PV Application, Silicon, 13, pp.2569-2580.
M. Vishnuwaran, Kesavan. V, Srinivasan, M, Ramasamy, P 2019, Effect of Titanium Carbide Heat Exchanger Block and Retort on Oxygen Impurities in Mc-Silicon: Numerical Modelling’, Silicon, 12, pp.799-803.
M. Srinivasan, Kesavan. V, P. Ramasamy, 2019, Simulation of Effect of Surface Tension in Molten Silicon During mc-Silicon Growth Process for PV Applications, Silicon, 10, pp.1087-1094.