Research Interest
Nanotechnology
Spintronic Devices
Magnetic recording Device
Computational Nanomaterials Science
Modeling, simulation and characterization of Solid State Devices
Journal
Mazumder, A.A.M., Hosen, K., Islam, M.S. and Park, J., 2022. Numerical Investigations of Nanowire Gate-All-Around Negative Capacitance GaAs/InN Tunnel FET. IEEE Access, 10, pp.30323-30334.
M. U. Sohag, K. Hosen, M. S. Islam, and J. Park, "Dual Source Negative Capacitance GaSb/InGaAsSb/InAs Heterostructure Based Vertical TFET with Steep Subthreshold Swing and High On-Off Current Ratio," in Result in Physics, vol.29, 2021.
K. Hosen, M. S. Islam, C. Stampfl and J. Park, "Numerical Analysis of Gate-All-Around HfO2/TiO2/HfO2 High-K Dielectric Based WSe2 NCFET With Reduced Sub-Threshold Swing and High On/Off Ratio," in IEEE Access, vol. 9, pp. 116254-116264, 2021, doi: 10.1109/ACCESS.2021.3105341.
K. Hosen, M. R. Islam, and K. Liu "Impact of Channel Length and Width for Charge Transportation of Graphene Field Effect Transistor," Chin. J. Chem. Phys., Vol. 34 (2), 20 September 2020, doi: 10.1063/1674-0068/cjcp2004055
International Conference
H. M. R. Faruque, K. Hosen, A. S. M. Jannatul Islam and M. S. Islam, "Halogen Doped Electronic Properties of 2D ZnO: A First Principles Study," 2019 5th International Conference on Advances in Electrical Engineering (ICAEE), Dhaka, Bangladesh, 2019, pp. 727-731, doi: 10.1109/ICAEE48663.2019.8975495. "Best Paper Award"
K. Hosen, B. K. Moghal, A. S. M. J. Islam and M. S. Islam, "Vacancy Induced Electron-Phonon Interaction of Single Layer Graphene," 2018 21st International Conference of Computer and Information Technology (ICCIT), Dhaka, Bangladesh, 2018, pp. 1-6, doi: 10.1109/ICCITECHN.2018.8631940.
B. K. Moghal, K. Hosen and M. S. Islam, "First Principle Calculations on the Electronic Properties of Siligraphene," 2018 4th International Conference on Electrical Engineering and Information & Communication Technology (iCEEiCT), Dhaka, Bangladesh, 2018, pp. 620-623, doi: 10.1109/CEEICT.2018.8628113.