Kamal Hosen - Research

Research Interest

Journal

Mazumder, A.A.M., Hosen, K., Islam, M.S. and Park, J., 2022. Numerical Investigations of Nanowire Gate-All-Around Negative Capacitance GaAs/InN Tunnel FET. IEEE Access, 10, pp.30323-30334.
M. U. Sohag, K. Hosen, M. S. Islam, and J. Park, "Dual Source Negative Capacitance GaSb/InGaAsSb/InAs Heterostructure Based Vertical TFET with Steep Subthreshold Swing and High On-Off Current Ratio," in Result in Physics, vol.29, 2021.
K. Hosen, M. S. Islam, C. Stampfl and J. Park, "Numerical Analysis of Gate-All-Around HfO₂/TiO₂/HfO₂ High-K Dielectric Based WSe₂ NCFET With Reduced Sub-Threshold Swing and High On/Off Ratio," in IEEE Access, vol. 9, pp. 116254-116264, 2021, doi: 10.1109/ACCESS.2021.3105341.
K. Hosen, M. R. Islam, and K. Liu "Impact of Channel Length and Width for Charge Transportation of Graphene Field Effect Transistor," Chin. J. Chem. Phys., Vol. 34 (2), 20 September 2020, doi: 10.1063/1674-0068/cjcp2004055

International Conference

H. M. R. Faruque, K. Hosen, A. S. M. Jannatul Islam and M. S. Islam, "Halogen Doped Electronic Properties of 2D ZnO: A First Principles Study," 2019 5th International Conference on Advances in Electrical Engineering (ICAEE), Dhaka, Bangladesh, 2019, pp. 727-731, doi: 10.1109/ICAEE48663.2019.8975495. "Best Paper Award"
K. Hosen, B. K. Moghal, A. S. M. J. Islam and M. S. Islam, "Vacancy Induced Electron-Phonon Interaction of Single Layer Graphene," 2018 21st International Conference of Computer and Information Technology (ICCIT), Dhaka, Bangladesh, 2018, pp. 1-6, doi: 10.1109/ICCITECHN.2018.8631940.
B. K. Moghal, K. Hosen and M. S. Islam, "First Principle Calculations on the Electronic Properties of Siligraphene," 2018 4th International Conference on Electrical Engineering and Information & Communication Technology (iCEEiCT), Dhaka, Bangladesh, 2018, pp. 620-623, doi: 10.1109/CEEICT.2018.8628113.

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