Conferences

2025

1. P. Kumar and J. Saha, "Enhancing Breakdown Voltage in Normally-OFF p-GaN HEMTs through ultra-thin AlN barrier layer", ICEE-2025.

2. P. Kumar, N. Mehta and J. Saha, "Study of Strain and Electronic band profile in AlScN and ScGaN Ferroelectric HEMTs", ICEE-2025.

3. Y. S. Sonone, A. Vishal, P. Singh and J. Saha, "FDTD-Based Design and Optimization of Multilayer Cavity Structures for Efficient Telecom-Band Single-Photon Sources", ICEE-2025.

4. P. Singh, P.P. Kannan, A. Narayana, J. Saha, "Urea-Assisted Doping of Plant-Derived Carbon Nanoparticles for Fluorescence-Based Metal Ion Sensing", ICEE-2025.

5. P. Singh, P.P. Kannan, A. Narayana, J. Saha, "Sustainable synthesis of doped blue-emissive carbon nanoparticles for environmental sensing applications ",  Remote Sensing for Agriculture, Ecosystems, and Hydrology XXVII 13666, 145-153, 2025.

2024

1. P. Kumar, J. Saha, “A Comprehensive analysis of Interlayer variabilities in double-channel AlGaN/GaN HEMT heterostructure”, 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-3, IEEE 2024.

2. M. Yadav, A. Barnwal, N.S. Reddy, P. Kumar, J. Saha, “Impact of Sb Variation and Electric Field on InAs/Ga (As) Sb Superlattice Structures”, 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-3, IEEE 2024.

3. P. Singh, S. Nair, A. Jose, C. Kaushal, S. Sankaranarayanan, J. Saha, “Green synthesis derived Carbon Nano-particles from Syzygium Cumini and Ocimum tenuiflorum”, Nanoscale Imaging, Sensing, and Actuation for Biomedical Applications XXI, vol. 12858, pp. 86-93. SPIE, 2024.

4. P. Singh, S. Nair, A. Jose, C. Kaushal, J. Saha, “Synthesis of green-fluorescent carbon nanoparticles from catharanthus roseus”, Tissue Optics and Photonics III 13010, 71-77, SPIE Photonics Europe, 2024.

5. P. Singh, S. Upadhyaya, H. Singh, A. Dan, P. Kumari, M. Dhanka, J. Saha, “Green chemistry - induced carbon nanoparticles with antioxidant and antibacterial assay”, Biomedical Spectroscopy, Microscopy, and Imaging III 13006, 137-143, SPIE Photonics Europe, 2024.

2023

1. P. Kumar, J. Saha, "Effect of barrier variabilities on the strain propagation and 2DEG profile of GaN/AlGaN HEMT heterostructures", In 2023 International Conference on Computer, Electrical & Communication Engineering (ICCECE), pp. 1-6. IEEE, 2023.

2. R. Kumar, J. Saha, and S. Chakrabarti. "Impact of linear alloy on strain coupled bilayer InAs/GaAs1-ySby quantum dot heterostructures." In Physics and Simulation of Optoelectronic Devices XXXI, vol. 12415, pp. 144-150. SPIE, 2023.

2022

1. R. Kumar, Ravindra, A. Kumar, Jh. Saha, and S. Chakrabarti. "A comparative analysis of InAs quantum dot heterostructure with equal and varying sub-capping layer thickness using digital alloy approach." In Low-Dimensional Materials and Devices 2022, vol. 12200, pp. 83-89. SPIE, 2022. 

2021

1. Kumar, R., Saha, J., & Chakrabarti, S. (2021, April). Effect of GaAs1-xNx capping layer on the strain profile and emission PL wavelength of InAs quantum dot heterostructures using digital alloy approach. In Quantum Optics and Photon Counting 2021 (Vol. 11771, p. 117710S). International Society for Optics and Photonics. 

2. Kumar, R., Saha, J., & Chakrabarti, S. (2021, March). Variation of In-concentration in barrier material of SK on SML quantum dot heterostructures and its impact on the strain and emission wavelength. In Physics and Simulation of Optoelectronic Devices XXIX (Vol. 11680, p. 116801K). International Society for Optics and Photonics. 

3. Das, D., Samesta, S., Panda, D., Saha, J., & Chakrabarti, S. (2021, March). The electronic interaction between vertically coupled Stranski-Krastanov and submonolayer quantum dots: a detailed investigation of carrier transitions and correlation with improved NIR energy conversion efficiency. In Physics, Simulation, and Photonic Engineering of Photovoltaic Devices X (Vol. 11681, p. 1168112). International Society for Optics and Photonics. 

4. Panda, D., Singh, A., Kumar, A., Saha, J., & Chakrabarti, S. (2021, March). Optimization of InAs dot-in-well structure for superior structural and optical performance. In Physics and Simulation of Optoelectronic Devices XXIX (Vol. 11680, p. 116801M). International Society for Optics and Photonics. 

2020

1. Samesta, S., Saha, J., Panda, D., Das, D., & Chakrabarti, S. (2020, August). Effect of ex-situ annealing on coupled hybrid InAs Stranski-Krastanov (SK) on Submonolayer (SML) Quantum Dot heterostructures with different spacer layer thickness. In Low-Dimensional Materials and Devices 2020 (Vol. 11465, p. 114651E). International Society for Optics and Photonics. 

2. Kumar, R., Saha, J., Panda, D., Kumar, R., Gazi, S. A., Gourishetty, R., & Chakrabarti, S. (2020, August). Bilayer self-assembled InAs QD using digital alloy capping layer approach: experiment and theory. In Low-Dimensional Materials and Devices 2020 (Vol. 11465, p. 114651A). International Society for Optics and Photonics. 

3. Kumar, R., Saha, J., & Chakrabarti, S. (2020, August). A comparative study of analog and digital alloy technique of InxGa1-xAs well material on InAs/InGaAs DWELL heterostructures. In Low-Dimensional Materials and Devices 2020 (Vol. 11465, p. 114651B). International Society for Optics and Photonics. 

4. Shriram, S. R., Kumar, R., Gazi, S. A., Saha, J., Panda, D., Mandal, A., & Chakrabarti, S. (2020, April). Influence of InGaAs matrix thickness on the optical properties and strain distribution in self-assembled sub-monolayer InAs quantum dot heterostructures. In Nanophotonics VIII (Vol. 11345, p. 113452W). International Society for Optics and Photonics. 

5. Kumar, R., Saha, J., & Chakrabarti, S. (2020, April). A comparative analysis of analog and digital alloy technique of InxGa1-xAs capping material on InAs quantum dot heterostructures. In Nanophotonics VIII (Vol. 11345, p. 113452Z). International Society for Optics and Photonics. 

6. Shriram, S. R., Gazi, S. A., Kumar, R., Saha, J., Panda, D., Mandal, A., & Chakrabarti, S. (2020, April). Study on optical properties and strain distribution of InAs/InGaAs sub-monolayer quantum dot heterostructure with multiple stacking layers. In Nanophotonics VIII (Vol. 11345, p. 113452X). International Society for Optics and Photonics. 

7. Kumar, R., Saha, J., & Chakrabarti, S. (2020, April). Effect of varying facet angle on the strain and energy band profile of InAs QD heterostructures. In Nanophotonics VIII (Vol. 11345, p. 113452Y). International Society for Optics and Photonics. 

8. Kumar, R., Panda, D., Saha, J., Dongre, S., Gazi, S. A., & Chakrabarti, S. (2020, April). Investigation of InAs quantum dots grown on the Ge substrate without migration enhance epitaxy layer. In Nanophotonics VIII (Vol. 11345, p. 113452V). International Society for Optics and Photonics. 

9. Kumar, R., Panda, D., Saha, J., Dongre, S., Gazi, S. A., & Chakrabarti, S. (2020, March). Optical and structural behaviour of InAs quantum dots grown on the Si substrate without Si-Ge graded layer and without migration enhanced epitaxy layer. In Quantum Dots, Nanostructures, and Quantum Materials: Growth, Characterization, and Modeling XVII (Vol. 11291, p. 112910Z). International Society for Optics and Photonics. 

10. Saha, J., Panda, D., Das, D., & Chakrabarti, S. (2020, March). A comparative analysis between heterogeneously coupled Stranski-Krastanov (SK) on Submonolayer (SML) and Submonolayer (SML) on Stranski-Krastanov (SK) quantum dot heterostructures. In Quantum Dots, Nanostructures, and Quantum Materials: Growth, Characterization, and Modeling XVII (Vol. 11291, p. 112910Y). International Society for Optics and Photonics. 

11. Saha, J., Panda, D., Das, D., Dongre, S., & Chakrabarti, S. (2020, March). Investigations on heterogeneously coupled Submonolayer (SML) on Stranski-Krastanov (SK) quantum dot heterostructures with higher (0.1 ML/sec) and lower (0.05 ML/sec) growth rates. In Quantum Dots, Nanostructures, and Quantum Materials: Growth, Characterization, and Modeling XVII (Vol. 11291, p. 1129104). International Society for Optics and Photonics. 

2019

1. RamaVath, R., Raut, P., Saha, J., & Chakrabarti, S. (2019, September). Improved carrier confinement and strain profile in heterogeneously coupled SK-SML quantum dot heterostructure. In Low-Dimensional Materials and Devices 2019 (Vol. 11085, p. 1108516). International Society for Optics and Photonics. 

2. Kumar, R., Panda, D., Das, D., Saha, J., Tongbram, B., & Chakrabarti, S. (2019, September). Influence of quaternary (In0. 21Al0. 21Ga0. 58As) capping on the performance of InAs quantum dot infrared photodetector. In Low-Dimensional Materials and Devices 2019 (Vol. 11085, p. 110851K). International Society for Optics and Photonics. 

3. Raut, P., Ramavath, R., Saha, J., Das, D., Panda, D., & Chakrabarti, S. (2019, September). Investigation of various capping layer configuration on heterogeneously coupled SML on SK quantum dots heterostructure. In Low-Dimensional Materials and Devices 2019 (Vol. 11085, p. 1108517). International Society for Optics and Photonics. 

4. Tanpure, A., Alam, M. J., Murkute, P., Sushama, S., Saha, J., & Chakrabarti, S. (2019, September). Grain boundary modeling and simulation of ZnO thin film transistor and its correlation with UV ozone annealing. In Nanoengineering: Fabrication, Properties, Optics, Thin Films, and Devices XVI (Vol. 11089, p. 1108928). International Society for Optics and Photonics. 

5. Kumar, R., Kumar, R., Panda, D., Saha, J., Tongbram, B., Das, D., ... & Chakrabarti, S. (2019, May). MBE-grown InGaAs/GaAs quantum-dots on Ge substrate: An idea towards optoelectronic integration on silicon. In Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XVI (Vol. 10929, p. 109290C). International Society for Optics and Photonics. 

2018

1. Das, D., Panda, D. P., Saha, J., Chavan, V., & Chakrabarti, S. (2018, May). Heterogeneously coupled InAs Stranski-Krastanov and submonolayer quantum dot infrared photodetector for next-generation IR imaging. In Infrared Technology and Applications XLIV (Vol. 10624, p. 106241S). International Society for Optics and Photonics. 

2. Saha, J., Panda, D., Das, D., Chavan, V., & Chakrabarti, S. (2018, February). Effect of various capping layer on the hydrostatic and biaxial strain of InAs QDs in x (100) and z (001) direction. In Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XV (Vol. 10543, p. 105430U). International Society for Optics and Photonics. 

3. Saha, J., Panda, D., Das, D., & Chakrabarti, S. (2018, February). Effect of InGaAs as a strain reducing layer on molecular beam epitaxy grown InAs quantum dots. In 2018 3rd International Conference on Microwave and Photonics (ICMAP) (pp. 1-2). IEEE. 

4. Panda, D., Saha, J., Shetty, S., & Chakrabarti, S. (2018, February). Investigation of strain-profile and optoelectronic properties of In (Ga) As/GaAs Trilayer QDIP. In 2018 3rd International Conference on Microwave and Photonics (ICMAP) (pp. 1-2). IEEE. 

Before 2018

1. Saha, J., Kumar, S., & Jha, S. (2015, December). A comparative analysis of some multi-gate junctionless transistors. In 2015 6th International Conference on Computers and Devices for Communication (CODEC) (pp. 1-4). IEEE. 

2. Jha, S., Saha, J., & Kumar, S. (2014, January). Tuning the noise margins of gate-all-around MOSFET based inverters through non-circular multi-channel architecture. In 2014 International Conference on Advances in Electrical Engineering (ICAEE) (pp. 1-4). IEEE. 

3. Saha, J., Kumari, A., Jha, S., & Kumar, S. (2014). On the voltage transfer characteristics (VTC) of some nanoscale metal-oxide-semiconductor field-effect-transistors (MOSFETs). In Physics of Semiconductor Devices (pp. 211-214). Springer, Cham.