Our students contribute to national and industry-sponsored research spanning semiconductor materials, devices, simulation, and AI.
Algorithm–device co-optimization for neuromorphic and in-memory computing chips
MOTIE · 2023–2027
Multifunctional MXene materials for sub-THz absorption, shielding, and thermal management
MSIT · 2024–2028
AI-assisted high-throughput element screening for high-performance, reliable oxide TFTs
MSIT · 2024–2027
Data-connected technology hub for crystalline oxide semiconductors in monolithic 3D integration
MSIT · 2025–2029
Integrated multi-domain simulation tools for emerging semiconductor devices
MOTIE · 2026–2030
Research on 2D semiconductor materials
Samsung Electronics · 2023–2027
FeFET Research
Samsung Electronics · 2026–2027
Work-function-tunable vdW semimetal contacts for 2D FETs
Samsung Science & Technology Foundation · 2026–2027
Performance analysis and AI-guided design optimization for emerging memory devices
SK hynix · 2025–2028
Computational prediction of material properties and device performance for emerging semiconductors
Samsung Electronics · 2025–2030
MOTIE: Ministry of Trade, Industry and Energy · MSIT: Ministry of Science and ICT
• Computational and AI-driven analysis of advanced hi-speed memory devices | Samsung Electronics | 2023–2026
• AI-based inverse-design methods for semiconductor devices | Samsung Electronics | 2022–2026
• Performance, variability, and reliability of next-generation vertical transistors | Samsung Electronics | 2024–2026
• Real-time simulation infrastructure for ultra-high-density, ultra-low-power semiconductor supercomputing | MSIT | 2023.04–2025.12
• Phase-change memory devices and performance evaluation for neuromorphic computing | MOTIE | 2022.04–2024.12
• Self-heating and reliability in GAA devices | Samsung Electronics | 2022.05–2024.12
• Lab-specialized entrepreneurship development program | MSIT | 2022.04–2024.12
• Online R&D platform for semiconductor device physics | MSIT | 2023.04–2023.12