Β My research has been focused on the growth of III-V semiconductor nanostructures using Metal Organic Chemical Vapor Deposition (MOCVD), Plasma-Assisted Molecular-Beam Epitaxy (MBE) and the fabrication of various devices such as wearable optoelectronics, next-generation sensors, and sustainable energy devices.
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Photoelectrochemical water splitting
Hydrogen generation with high efficiency and long-term stability by optimizing light absorption and accelerating interfacial charge transfer kinetics.Β
Control of carrier dynamics by inducing high carrier concentration and carrier guiding effect through newly conceptualized III-nitride nanostructures
Improvement in hydrogen generation using III-nitride nanostructures coated with 2D materials, such as Graphene oxide
Semiconductor Sensing devices
Thermal stability and mechanical robustness make it ideal for sensors in high-temperature, high-pressure environments like automotive and aerospace.Β Β
UV sensitivity and wide bandgap make it ideal for UV sensors in environmental monitoring and radiation detectors in medical, security, and space applications.
Β These sensors provide high sensitivity and fast response times, making them ideal for gas and chemical detection in industrial safety, air quality monitoring, and healthcare.Β
Hyper-realistic (AR / VR / MR) display
GaN nanowires exhibit superior optical properties, such as high light emission efficiency due to their ability to reduce non-radiative recombination.
Precise tuning of emission wavelengths via bandgap engineering enables highly efficient color conversion in semiconductor materials.Β
Their compatibility with flexible substrates and ability to scale down Micro-LEDs enable the development of ultra-high resolution, lightweight, and portable AR/VR/MR displays.Β
Technical skills
Materials Synthesis: Thermal-CVD, Metal-organic CVD, Plasma-assisted MBE
Fabrication: Reactive ion etching, Wet etching, Thermal evaporation, E-beam deposition, Sputter deposition, Wire bonding, Dry/wet transfer
Materials Characterization: SEM, TEM, AFM, Raman spectroscopy, UV-vis spectroscopy, XRD, PL, XPS, Micro-PL
Device Characterization: L-I-V measurement equipment, Source meter, Potentiostat, IPCE measurement system, Bending machine, Solar simulator,Β G.C. System (Agilent)
Software Packages: MS Office, Origin, 3D Max, Gatan
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