ur research is dedicated to the advancement of compound semiconductor-based power devices with a primary focus on wide and ultra-wide bandgap (UWBG) materials, including GaN, and Ga₂O₃. These materials offer superior physical properties such as high critical electric field strength, wide bandgap energy, and excellent thermal conductivity, enabling significant improvements in breakdown voltage, switching speed, and energy efficiency compared to conventional Si-based devices.

We conduct comprehensive studies covering epitaxial growth, defect control, and heterostructure engineering, with particular interest in Schottky barrier formation, interface states, and surface passivation. By tailoring metal–semiconductor contacts, dielectric layers, and doping profiles, we aim to enhance device stability, carrier transport, and electric field distribution under high-voltage operation.

Our current research extends to novel heterojunction systems such as p-type Cu₂O₃/n-type Ga₂O₃ as well as oxide-based Schottky and MOS-type power devices. We also employ electrical characterization, TCAD simulation, and material analysis to establish correlations between material properties and device performance.

Through these efforts, we aim to pioneer next-generation power semiconductor technologies that enable compact, high-efficiency, and thermally robust power conversion systems for applications in electric vehicles, renewable energy integration, and high-frequency power electronics.