Program

[F-P1] Heiji Watanabe (Osaka University, Japan), Gate stack technology for advanced wide bandgap power electronics

[F-P2] Mauro Boero (University of Strasbourg, France), Computics driven methods and applications to innovative materials for next-generation devices

[F-K1] Yu-ichiro Matsushita (Tokyo Institute of Technology, Japan), Nature of interface defects in SiC-MOS devices revealed by first-principles calculations: Conduction-band fluctuation and carbon defects

[F-K2] Stanislaw Krukowski (Institute of High Pressure Physics, Poland), Polarization doping - a possible way to efficient UV devices

[F-K3] David Bowler (University College London, UK), Large-scale and linear-scaling DFT calculations with the Conquest code: applications to semiconductor nanowires and polar textures in PbTiO3 films

[F-K4] Nobuya Mori (Osaka University, Japan), Semiconductor device modeling and simulation from an atomistic view

[F-K5] Akira Kusaba (Kyushu University, Japan), Application of Machine Learning Methods to More Quantitative GaN MOVPE Modeling

[S-K1] William Alan Doolittle (Georgia Institute of Technology, USA), Substantial p-type, n-type and Homojunction Diode Functionality using the Highest Bandgap Semiconductor Ever Demonstrated

[S-K2] Kazuhiro Ohkawa (King Abdullah University of Science and Technology, Kingdom of Saudi Arabia), Development of RGB micro-LED arrays

[S-K3] Siddharth Rajan (The Ohio State University, USA), Engineering of Polarization Effects for Next-Generation III-Nitride Devices

[S-K4] Xinqiang Wang (Peking University, China), Deep UV-LEDs on nano-PSS

[S-K5] Ulrich T. Schwarz (Technische Universität Chemnitz, Germany), The spectrum of (Al,Ga,In)N laser diodes, from green to deep UV, from low power VCSEL to high power broad area edge emitters

[F-I1] Tomoya Ono (Kobe University, Japan), DFT study on defects at SiC MOS interface: electronic structure and formation mechanism

[F-I2] Toru Akiyama (Mie University, Japan), Ab initio-based approach for reaction process at 4H-SiC/SiO2 interfaces

[F-I3] Masato Oda (Wakayama University), Electronic structures and theinitial growth mechanism of (ZnO)1-x(InN)x

[F-I4] Takahiro Kawamura (Mie University), First-principles calculation of optical properties of III-V nitrite semiconductors

[F-I5] Konrad Sakowski (University of Warsaw, Poland), Analysis of ABC recombination coefficients of gallium nitride based on time-resolved cathodoluminescence

[F-I6] Gennady Mil'nikov (Osaka University, Japan), Application of the R-matrix approach to large scale NEGF simulations

[F-I7] Yosuke Harashima (University of Tsukuba, Japan), First principles study on dislocation and impurity complexes in GaN

[F-I8] Shugo Nitta (Nagoya University, Japan), High-resolution vapor phase reaction analysis in nitride semiconductors MOVPE

[F-I9] Kieu My Bui (Nagoya University, Japan), Density Functional Theory study of Step Flow Growth of Gallium Nitride

[F-I10] Masaaki Araidai (Nagoya University), First-principles study of two-dimensional materials of group IV elements

[S-I1] Kazuki Nomoto (Cornell University, USA), Two dimensional hole gas in nitride semiconductors

[S-I2] Daniel Feezell (University of New Mexico, USA), Nonpolar/semipolar and nanoscale InGaN/GaN LEDs for high-speed modulation

[S-I3] Maki Kushimoto (Nagoya University, Japan), UV-C LDs fabricated on AlN Substrates

[S-I4] Dong-Seon Lee (Gwangju Institute of Science and Technology, Korea), Stability of Graphene on Nitrides for the Realization of GaN Remote Epitaxy

[S-I5] Shuhei Ichikawa (Osaka University, Japan), Control of macrostep structures on vicinal (0001) GaN surfaces using Eu-doped GaN interlayers

[S-I6] Atsushi Kobayashi (University of Tokyo, Japan), Epitaxial integration of NbN superconductors with AlN

[S-I7] Tomoyuki Tanikawa (Osaka University, Japan), Polarity inversion of GaN films by metalorganic vapor epitaxy using an AlN interlayer

[S-I8] Elke Meissner (Fraunhofer IISB, Germany), TBA

[S-I9] Martin Kuball (University of Bristol, UK), Thermal study of RF and power devices: From micro to nanoscale

[S-I10] Liverios Lymperakis (Max-Planck-Institut für Eisenforschung, Germany), Ab-initio based investigations III-Nitride surfaces: Implications of growth conditions on alloy compositional limits

[S-I11] James M. LeBeau (Massachusetts Institute of Technology, USA), Understanding the surface and growth of Al1-xGaxN materials with scanning transmission electron microscopy

[S-I12] Takeyoshi Onuma (Kogakuin University, Japan), Far-UV emission around 200 nm in rocksalt-structured MgZnO

[S-I13] Ken Goto (Tokyo University of Agriculture and Technology, Japan), Investigation of MOVPE growth for beta gallium oxide by thermodynamic and experimental studies

[S-I14] Ryota Ishii (Kyoto University, Japan), Temperature-dependent electroluminescence spectroscopy on 265-nm AlGaN-based LEDs grown on AlN substrates

[S-I15] Kanako Shojiki (Mie University, Japan), Polarity control and threading-dislocation-density reduction of face-to-face annealed sputtered AlN on sapphire

[S-I16] Narihito Okada (Yamaguchi University, Japan), Demonstration of N-polar AlGaN/AlN High Electron Mobility Transistor Fabricated on Sapphire Substrate by MOVPE

[S-I17] Kenjiro Uesugi (Mie University, Japan), High-power operation of DUV-LED grown on high-temperature annealed AlN templates

[S-I18] Kohei Shima (Tohoku University, Japan), Room-temperature cavity-polaritons in planar ZnO microcavities fabricated by a top-down process

[S-I19] Tim Wernicke (Technische Universität Berlin, Germany), TBA

[F-C1] Tomoya Kimura (Nagoya University), First-Principles Investigation of Hydrogen Adsorption on Stepped SiC Surface during CVD Growth

[F-C2] Yoshiki Ohata (Nagoya University), First principles studies of the effects of carbon atoms on the potassium-ion electret used in vibration-powered generators

[S-C1] Shiki Tanaka (Kyoto University, Japan), Selectively and non-selectively excited photoluminescence study for AlGaN quantum wells grown on epitaxially laterally overgrown AlN templates

[S-C2] Akihiro Shimada (Osaka University, Japan), Local Piezoelectric Lattice Strain in AlGaN/GaN HEMT Devices under Operation Analyzed by Synchrotron Radiation Nanobeam X-ray Diffraction

[S-C3] Ayumu Yabutani (Meijo University, Japan), AlGaN-based UV-B laser diode fabricated on AlN with 1 μm periodic concave and convex patterns