#Equal Contribution, *Corresponding Author

Journal Publications & Selected Conference Papers

2025

1. 1. Hwiho Hwang, Junsu Yu, Sangwook Youn, and Hyungjin Kim*, "Ferroelectric memcapacitor crossbar array with NAND flash structure for in-memory computing," in Proc. IEEE International Electron Devices Meeting (IEDM), to be presented.

   2. Donguk Kim, Won Jun Pyo, Sangwook Youn, Jaehee So, Youngseok Kim, Hyungjin Kim*, and Felix Sunjoo Kim*, "Organic electrolyte-gated synaptic transistors with finely tunable 14-bit states based on ion concentration tailoring," Device, in press, doi: 10.1016/j.device.2025.100940.

   3. Chandreswar Mahata, Muhammad Ismail, Hyungjin Kim*, and Sungjun Kim*, "Optically tunable synaptic plasticity and memory emulation in Au-nanoparticle enhanced HfTiOx/Al2O3-based photonic memristors", Advanced Functional Materials, in press, doi: 10.1002/adfm.202510663.

   4. Gyeonghae Kim, Sangwook Youn, Jinwoo Park and Hyungjin Kim*, "Configurable kernel map implementation in memristor crossbar for convolution neural network," Advanced Intelligent Systems, in press, doi: 10.1002/aisy.202500032.

   5. Dayeon Yu, Suhyeon Ahn, Hwiho Hwang, and Hyungjin Kim*, "Physical unclonable function with enlarged string current variation in NAND flash array by WL selection scheme," IEEE Transactions on Electron Devices, vol. 72, no. 10, pp. 5400-5406, Oct. 2025, doi: 10.1109/TED.2025.3597584.

   6. Jinwoo Park and Hyungjin Kim*, "Physical unclonable function with 3D stacked memristor crossbar array using self-differential pair," ACS Nano, vol. 19, no. 31, pp. 28135-28145, Aug. 2025, doi: 10.1021/acsnano.4c18621.

   7. Jinwoo Park, Hyunjoong Kim, and Hyungjin Kim*, "Bias-independent TRNG circuit using memristor noise signals as entropy source," Advanced Intelligent Systems, vol. 7, no. 6, p. 202400648, Jun. 2025, doi: 10.1002/aisy.202400648.

   8. Hwiho Hwang, Gyeonghae Kim, Dayeon Yu, and Hyungjin Kim*, "Wordline input bias scheme for neural network implementation in 3D-NAND flash," Biomimetics, vol. 10, no. 5, p. 318, May 2025, doi: 10.3390/biomimetics10050318.

   9. Hwiho Hwang, Junsu Yu, Sangwook Youn, Woo Young Choi, and Hyungjin Kim*, "2C-ternary content addressable memory in memcapacitor crossbar array with NAND flash structure," Small, vol. 21, no. 9, p. 2408618, Feb. 2025, doi: 10.1002/smll.202408618.

   10. Jisung Im, Hansol Kim, Hyungjin Kim*, and Sung Yun Woo*, "Design strategies for BCAT structures: Enhancing DRAM reliability and mitigating row hammer effect," Electronics, vol. 14, no. 3, p. 499, Feb. 2025, doi: 10.3390/electronics14030499.

2024

1. 11. Kyuree Kim, Sangwook Youn, Jinwoo Park, and Hyungjin Kim*, "Ising solver using weight profile of memristor crossbar array for combinatorial optimization," in Proc. IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA, pp. 22.2.1-4, Dec. 2024, doi: 10.1109/IEDM50854.2024.10873396.

   12. Junsu Yu, Hwiho Hwang, Hyungjin Kim*, and Woo Young Choi*, "Vertically stackable memcapacitor crossbar array based on NAND flash array structure," in Proc. IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA, pp. 5.5.1-4, Dec. 2024, doi: 10.1109/IEDM50854.2024.10873480.

   13. Dayeon Yu, Suhyeon Ahn, Sangwook Youn, Jinwoo Park, and Hyungjin Kim*, "True random number generator using stochastic noise signal of memristor with variation tolerance," Chaos Solitons & Fractals, vol. 189, p. 115708, Dec. 2024, doi: 10.1016/j.chaos.2024.115708.

   14. Sungjoon Kim, Hyeonseung Ji, Kyungchul Park, Hyojin So, Hyungjin Kim, Sungjun kim, and Woo Young Choi, "Memristive architectures exploiting self-compliance multilevel implementation on 1 kb crossbar arrays for online and offline learning neuromorphic applications," ACS Nano, vol. 18, no. 36, pp. 25128-25143, Sept. 2024, doi: 10.1021/acsnano.4c06942.

   15. Sungjoon Kim, Kyungho Hong, Hyungjin Kim, Min-Hwi Kim, and Woo Young Choi, "Overshoot-suppressed memristor array with AlN oxygen barrier for low-power operation in the intelligent neuromorphic systems," Advanced Intelligent Systems, vol. 6, no. 8, p. 2300797, Aug. 2024, doi: 10.1002/aisy.202300797.

   16. Min Suk Song, Hwiho Hwang, Junsu Yu, Sungmin Hwang, and Hyungjin Kim*, "Annealing effects on charge trap flash with TAHOS structure," Journal of Semiconductor Technology and Science, vol. 24, no. 4, pp. 323-331, Aug. 2024, doi: 10.5573/JSTS.2024.24.4.323.

   17. Hwiho Hwang, Min Suk Song, Sangwook Youn, and Hyungjin Kim*, "True random number generator using memcapacitor with charge trapping layer," IEEE Electron Device Letters, vol. 45, no. 8, pp. 1464-1467, Aug. 2024, doi: 10.1109/LED.2024.3411549.

   18. Suhyeon Ahn, Junsu Yu, Hwiho Hwang, Min Suk Song, Dayeon Yu, Sungmin Hwang, In-Young Chung, Woo Young Choi, and Hyungjin Kim*, "Coupling-free readout scheme for memcapacitors with NAND flash structure," IEEE Transactions on Electron Devices, vol. 71, no. 8, pp. 4670-4676, Aug. 2024, doi: 10.1109/TED.2024.3418289.

   19. Sangwook Youn, Yeongjin Hwang, Tae-Hyeon Kim, Sungjoon Kim, Hwiho Hwang, Jinwoo Park, and Hyungjin Kim*, "Threshold learning algorithm for memristive neural network with binary switching behavior," Neural Networks, vol. 176, p. 106355, Aug. 2024, doi: 10.1016/j.neunet.2024.106355.

   20. Seung Min Lee, Ji-Min Park, Suhyeon Ahn, Seong Cheol Jang, Hyungjin Kim*, and Hyun-Suk Kim*, "Inorganic p-type tellurium-based synaptic transistors: Complementary synaptic pairs with n-type devices for energy-efficient operation," ACS Applied Electronic Materials, vol. 6, no. 7, pp. 5371-5378, Jul. 2024, doi: 10.1021/acsaelm.4c01027.

   21. Tae-Hyeon Kim, Sungjoon Kim, Jinwoo Park, Sangwook Youn, and Hyungjin Kim*, "Memristor crossbar array with enhanced device yield for in-memory vector-matrix multiplication," ACS Applied Electronic Materials, vol. 6, no. 6, pp. 4099-4107, Jun. 2024, doi: 10.1021/acsaelm.4c00199.

   22. Sungjoon Kim, Kyungchul Park, Kyungho Hong, Tae-Hyeon Kim, Jinwoo Park, Sangwook Youn, Hyungjin Kim*, and Woo Young Choi*, "Overshoot-suppressed memristor crossbar array with high yield by AlOx oxidation for neuromorphic system," Advanced Materials Technologies, vol. 9, no. 11, p. 2400063, Jun. 2024, doi: 10.1002/admt.202400063.

   23. Hansol Kim, Sung Yun Woo, and Hyungjin Kim*, "Neuron circuit based on a split-gate transistor with nonvolatile memory for homeostatic functions of biological neurons," Biomimetics, vol. 9, no. 6, p. 335, Jun. 2024, doi: 10.3390/biomimetics9060335.

   24. Ajit Kumar, Mokurala Krishnaiah, Jinwoo Park, Dhananjay Mishra, Bidyashakti Dash, Hyeon-Bin Jo, Geun Lee, Sangwook Youn, Hyungjin Kim*, and Sung Hun Jin*, "Multibit, lead-free Cs2SnI6 resistive random access memory with self-compliance for improved accuracy in binary neural network application," Advanced Functional Materials, vol. 34, no. 16, p. 2310780, Apr. 2024, doi: 10.1002/adfm.202310780.

   25. Kyuree Kim, Min Suk Song, Hwiho Hwang, Sungmin Hwang and Hyungjin Kim*, "A comprehensive review of advanced trends: From artificial synapses to neuromorphic systems with consideration of non-ideal effects," Frontiers in Neuroscience, vol. 18, p. 1279708, Apr. 2024, doi: 10.3389/fnins.2024.1279708.

   26. Sangwook Youn, Jungjin Lee, Sungjoon Kim, Jinwoo Park, Kyuree Kim, and Hyungjin Kim*, "Programmable threshold logic implementations in a memristor crossbar array," Nano Letters, vol. 24, no. 12, pp. 3581-3589, Mar. 2024, doi: 10.1021/acs.nanolett.3c04073.

   27. Jinwoo Park, Sungjoon Kim, Min Suk Song, Sangwook Youn, Kyuree Kim, and Hyungjin Kim*, "Implementation of convolutional neural networks in memristor crossbar arrays with binary activation and weight quantization," ACS Applied Materials & Interfaces, vol. 16, no. 1, pp. 1054-1065, Jan. 2024, doi: 10.1021/acsami.3c13775.

2023

1. 28. Min Suk Song, Suhyeon Ahn, Hwiho Hwang, and Hyungjin Kim*, "Memcapacitor crossbar array with charge trapping layer for physical unclonable function in NAND flash architecture," in Proc. IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA, pp. 12.2.1-4, Dec. 2023, doi: 10.1109/IEDM45741.2023.10413842.

   29. Min Suk Song, Hwiho Hwang, Geun Ho Lee, Suhyeon Ahn, Sungmin Hwang, and Hyungjin Kim*, "Kernel mapping methods of convolutional neural network in 3D NAND flash architecture," Electronics, vol. 12, no. 23, p. 4796, Dec. 2023, doi: 10.3390/electronics12234796.

   30. Sungmin Hwang, Junsu Yu, Min Suk Song, Hwiho Hwang, and Hyungjin Kim*, "Memcapacitor crossbar array with charge trap NAND flash structure for neuromorphic computing," Advanced Science, vol. 10, no. 32, p. 202303817, Nov. 2023, doi: 10.1002/advs.202303817.

   31. Ji-Min Park, Hwiho Hwang, Min Suk Song, Seong Cheol Jang, Jung Hyun Kim, Hyungjin Kim*, and Hyun-Suk Kim*, "All-solid-state synaptic transistors with Li-ion-based electrolyte for linear weight mapping and update in neuromorphic computing system," ACS Applied Materials & Interfaces, vol. 15, no. 40, pp. 47229-47237, Oct. 2023, doi: 10.1021/acsami.3c09162. 

   32. Myung-Hyun Baek and Hyungjin Kim*, "Polysilicon-channel synaptic transistors for implementation of short- and long-term memory characteristics," Biomimetics, vol. 8, no. 4, p. 368, Aug. 2023, doi: 10.3390/biomimetics8040368.

   33. Hyunkyung Lee, Daeun Jung, and Hyungjin Kim*, "Peer assessment for engineering design education: An exploratory study," International Journal of Engineering Education, vol. 39, no. 3, pp. 732-742, May 2023, link.

   34. Min Suk Song, Tae-Hyeon Kim, Hwiho Hwang, Suhyeon Ahn, Hussein Nili, and Hyungjin Kim*, "Optimization of random telegraph noise characteristics in memristor for true random number generator," Advanced Intelligent Systems, vol. 5, no. 5, p. 2200358, May 2023, doi: 10.1002/aisy.202200358. 

   35. Geun Ho Lee, Tae-Hyeon Kim, Sangwook Youn, Jinwoo Park, Sungjoon Kim, and Hyungjin Kim*, "Low-fluctuation nonlinear model using incremental step pulse programming with memristive devices," Chaos Solitons & Fractals, vol. 170, p. 113359, May 2023, doi: 10.1016/j.chaos.2023.113359.

   36. Tae-Hyeon Kim, Kyungho Hong, Sungjoon Kim, Jinwoo Park, Sangwook Youn, Jong-Ho Lee, Byung-Gook Park, Hyungjin Kim*, and Woo Young Choi*, "Fuse devices for pruning in memristive neural network," IEEE Electron Device Letters, vol. 44, no. 3, pp. 520-523, Mar. 2023, doi: 10.1109/LED.2023.3237651.

   37. Sangwook Youn, Sungjoon Kim, Tae-Hyeon Kim, Jinwoo Park, and Hyungjin Kim*, "Memristor crossbar circuit for ternary content-addressable memory with fine tuning operation", Advanced Intelligent Systems, vol. 5, no. 3, p. 2200325, Mar. 2023, doi: 10.1002/aisy.202200325. 

2022

1. 38. Jinwoo Park, Tae-Hyeon Kim, Sungjoon Kim, Min Suk Song, Sangwook Youn, Kyungho Hong, Byung-Gook Park, and Hyungjin Kim*, "Highly reliable physical unclonable functions using memristor crossbar with tunneling conduction," in Proc. IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA, pp. 18.3.1-4, Dec. 2022, doi: 10.1109/IEDM45625.2022.10019539.

   39. Tae-Hyeon Kim, Sungjoon Kim, Kyungho Hong, Hyungjin Kim*, and Byung-Gook Park*, "Enhanced current-voltage nonlinearity by controlling oxygen concentration of TiOx buffer layer for RRAM passive crossbar array," Journal of Semiconductor Technology and Science, vol. 22, no. 6, pp. 417-425, Dec. 2022, doi: 10.5573/JSTS.2022.22.6.417.

   40. Geun Ho Lee, Min Suk Song, Sangwoo Kim, Jiyong Yim, Sungmin Hwang, Junsu Yu, Daewoong Kwon*, and Hyungjin Kim*, "Ferroelectric field-effect transistors for binary neural network with 3-D NAND architecture," IEEE Transactions on Electron Devices, vol. 69, no. 11, pp. 6438-6445, Nov. 2022, doi: 10.1109/TED.2022.3207130.

   41. Woo Sik Choi, Min Suk Song, Hyungjin Kim*, and Dae Hwan Kim*, "Conduction mechanism analysis of abrupt- and gradual-switching InGaZnO memristors," Micromachines, vol. 13, no. 11, p. 1870, Oct. 2022, doi: 10.3390/mi13111870.

   42. Sungjoon Kim, Jinwoo Park, Tae-Hyeon Kim, Kyungho Hong, Yeongjin Hwang, Byung-Gook Park*, and Hyungjin Kim*, "4-bit multilevel operation in overshoot suppressed Al2O3/TiOx RRAM crossbar array," Advanced Intelligent Systems, vol. 4, no. 9, p. 2100273, Sept. 2022, doi: 10.1002/aisy.202100273.

   43. Jinwoo Park, Min Suk Song, Sangwook Youn, Tae-Hyeon Kim, Sungjoon Kim, Kyungho Hong, and Hyungjin Kim*, "Intrinsic variation effect in memristive neural network with weight quantization," Nanotechnology, vol. 33, no. 37, p. 375203, Sept. 2022, doi: 10.1088/1361-6528/ac7651.

   44. Tae-Hyeon Kim, Sungjoon Kim, Kyungho Hong, Jinwoo Park, Sangwook Youn, Jong-Ho Lee, Byung-Gook Park*, and Hyungjin Kim*, "Effect of program error in memristive neural network with weight quantization," IEEE Transactions on Electron Devices, vol. 69, no. 6, pp. 3151-3157, Jun. 2022, doi: 10.1109/TED.2022.3169112.

   45. Woo Sik Choi, Donguk Kim, Tae Jun Yang, Inseok Chae, Changwook Kim, Hyungjin Kim*, and Dae Hwan Kim*, "Electrode-dependent electrical switching characteristics of InGaZnO memristor," Chaos Solitons & Fractals, vol. 158, p. 112106, May 2022, doi: 10.1016/j.chaos.2022.112106.

   46. Kyuree Kim, and Hyungjin Kim*, "Overview of GAAFET Process Flow and Key Modules (Gate-All-Around FET의 전체 공정 과정과 핵심 공정모듈 고찰)," Journal of The Institute of Electronics and Information Engineer (전자공학회논문지), vol. 59, no. 4, pp. 21-30, Apr. 2022, doi: 10.5573/ieie.2022.59.4.21.

   47. Shinyoung Park, Sangwook Youn, Jun Tae Jang, Hyungjin Kim*, and Dae Hwan Kim*, "Effect of hydrogen migration in SiO2/Al2O3 stacked gate insulator of InGaZnO thin-film transistors," Crystals, vol. 12, no. 5, p. 594, Apr. 2022, doi: 10.3390/cryst12050594.

   48. Geun Ho Lee, Tae-Hyeon Kim, Min Suk Song, Jinwoo Park, Sungjoon Kim, Kyungho Hong, Yoon Kim, Byung-Gook Park*, and Hyungjin Kim*, "Effect of weight overlap region on neuromorphic system with memristive synaptic devices," Chaos Solitons & Fractals, vol. 157, p. 111999, Apr. 2022, doi: 10.1016/j.chaos.2022.111999.

   49. Sungmin Hwang, Junsu Yu, Geun Ho Lee, Min Suk Song, Jeesoo Chang, Kyung Kyu Min, Taejin Jang, Jong-Ho Lee, Byung-Gook Park*, and Hyungjin Kim*, "Capacitor-based synaptic devices for hardware spiking neural networks," IEEE Electron Device Letters, vol. 43, no. 4, pp. 549-552, Apr. 2022, doi: 10.1109/LED.2022.3149029.

   50. Woo Sik Choi, Jun Tae Jang, Donguk Kim, Tae Jun Yang, Changwook Kim, Hyungjin Kim*, and Dae Hwan Kim*, "Influence of Al2O3 layer on InGaZnO memristor crossbar array for neuromorphic applications," Chaos Solitons & Fractals, vol. 156, p. 111813, Mar. 2022, doi: 10.1016/j.chaos.2022.111813.

   51. Manh-Cuong Nguyen, Kitae Lee, Sihyun Kim, Sangwook Youn, Yeongjin Hwang, Hyungjin Kim*, Rino Choi*, and Daewoong Kwon*, "Incremental drain-voltage-ramping training method for ferroelectric field-effect transistor synaptic devices," IEEE Electron Device Letters, vol. 43, no. 1, pp. 17-20, Jan. 2022, doi: 10.1109/LED.2021.3127927.

   52. Kyung Kyu Min, Junsu Yu, Yeonwoo Kim, Chae Soo Kim, Taejin Jang, Sungmin Hwang, Hyungjin Kim, Jong-Ho Lee, Daewoong Kwon*, and Byung-Gook Park*, "Ferroelectricity of pure-HfOx in metal-ferroelectric-insulator-semiconductor stacks and its memory application," Applied Surface Science, vol. 573, p. 151566, Jan. 2022, doi: 10.1016/j.apsusc.2021.151566.

2021

1. 53. Tae-Hyeon Kim, Sungjoon Kim, Kyungho Hong, Jinwoo Park, Yeongjin Hwang, Byung-Gook Park*, and Hyungjin Kim*, "Multilevel switching memristor by compliance current adjustment for off-chip training of neuromorphic system," Chaos Solitons & Fractals, vol. 153, p. 111587, Dec. 2021, doi: 10.1016/j.chaos.2021.111587.

   54. Jinwoo Park, Tae-Hyeon Kim, Sungjoon Kim, Geun Ho Lee, Hussein Nili, and Hyungjin Kim*, "Conduction mechanism effect on physical unclonable function using Al2O3/TiOx memristors," Chaos Solitons & Fractals, vol. 152, p. 111388, Nov. 2021, doi: 10.1016/j.chaos.2021.111388.

   55. Junsu Yu, Kyung Kyu Min, Yeonwoo Kim, Sihyun Kim, Sungmin Hwang, Tae-Hyeon Kim, Changha Kim, Hyungjin Kim, Jong-Ho Lee, Daewoong Kwon*, and Byung-Gook Park*, "A novel physical unclonable function (PUF) using 16 × 16 pure-HfOx ferroelectric tunnel junction array for security applications," Nanotechnology, vol. 32, no. 48, p. 485202, Nov. 2021, doi: 10.1088/1361-6528/ac1dd5.

   56. Shinyoung Park, Jun Tae Jang, Yeongjin Hwang, Hyunkyu Lee, Woo Sik Choi, Dongyeon Kang, Changwook Kim, Hyungjin Kim*, and Dae Hwan Kim*, "Effect of the gate dielectric layer of flexible InGaZnO synaptic thin-film transistors on learning behavior," ACS Applied Electronic Materials, vol. 3, no. 9, pp. 3972-3979, Sept. 2021, doi: 10.1021/acsaelm.1c00517.

   57. Hyungjin Kim, Mahmood Reza Mahmoodi, Hussein Nili, and Dmitri B. Strukov*, "4k-memristor analog-grade passive crossbar circuit," Nature Communications, no. 12, p. 5198, Aug. 2021, doi: 10.1038/s41467-021-25455-0.

   58. Dayoung Kim, Tae-Hyeon Kim, Yunyeong Choi, Geun Ho Lee, Jungwon Lee, Wookyung Sun, Byung-Gook Park, Hyungjin Kim*, and Hyungsoon Shin*, "Selected bit-line current PUF: A non-invasive hardware security primitive based on a memristor crossbar array," IEEE Access, no. 9, pp. 120901-120910, Aug. 2021, doi: 10.1109/ACCESS.2021.3108534.

   59. Yeongjin Hwang, Jeong Hoon Jeon, Juhyun Lee, Jonghyuk Yoon, Felix Sunjoo Kim*, and Hyungjin Kim*, "Effect of threshold voltage window and variation of organic synaptic transistor for neuromorphic system," Journal of Nanoscience and Nanotechnology, vol. 21, no. 8, pp. 4303-4309, Aug. 2021, doi: 10.1166/jnn.2021.19393.

   60. Geun Ho Lee, Sungmin Hwang, Junsu Yu, and Hyungjin Kim*, "Architecture and process integration overview of 3D NAND flash technologies," Applied Sciences, vol. 11, no. 15, p. 6703, Jul. 2021, doi: 10.3390/app11156703.

   61. Tae-Hyeon Kim, Jaewoong Lee, Sungjoon Kim, Jinwoo Park, Byung-Gook Park*, and Hyungjin Kim*, "3-bit multilevel operation with accurate programming scheme in TiOx/Al2O3 memristor crossbar array for quantized neuromorphic system," Nanotechnology, no. 32, vol. 29, p. 295201, Jul. 2021, doi: 10.1088/1361-6528/abf0cc.

   62. Sungmin Hwang, Hyungjin Kim*, and Byung-Gook Park*, "Quantized weight transfer method using spike-timing-dependent plasticity for hardware spiking neural network," Applied Sciences, vol. 11, no. 5, p. 2059, Feb. 2021, doi: 10.3390/app11052059.

   63. Sobia Ali Khan, Geun Ho Lee, Chandreswar Mahata, Muhammad Ismail, Hyungjin Kim*, and Sungjun Kim*, "Bipolar and complementary resistive switching characteristics and neuromorphic system simulation in a Pt/ZnO/TiN synaptic device," Nanomaterials, vol. 11, no. 2, p. 315, Jan. 2021, doi: 10.3390/nano11020315.

2020

1. 64. Sungjoon Kim, Tae-Hyeon Kim, Hyungjin Kim*, and Byung-Gook Park*, "Current suppressed self-compliance characteristics of oxygen rich TiOy inserted Al2O3/TiOx based RRAM," Applied Physics Letters, vol. 117, no. 20, p. 202106, Nov. 2020, doi: 10.1063/5.0027757.

   65. Hyun-Seok Choi, Hyungjin Kim, Jong-Ho Lee, Byung-Gook Park, and Yoon Kim, "AND flash array based on charge trap flash for implementation of convolutional neural networks," IEEE Electron Device Letters, vol. 41, no. 11, pp. 1653-1656, Nov. 2020, doi: 10.1109/LED.2020.3025587.

   66. Jun Tae Jang, Jungi Min, Yeongjin Hwang, Sung-Jin Choi, Dong Myong Kim, Hyungjin Kim*, and Dae Hwan Kim*, "Digital and analog switching characteristics of InGaZnO memristor depending on top electrode material for neuromorphic system," IEEE Access, vol. 8, pp. 192304-192311, Oct. 2020, doi: 10.1109/ACCESS.2020.3032188.

   67. Tae-Hyeon Kim, Hussein Nili, Min-Hwi Kim, Kyung Kyu Min, Byung-Gook Park*, and Hyungjin Kim*, "Reset-voltage-dependent precise tuning operation of TiOx/Al2O3 memristive crossbar array," Applied Physics Letters, vol. 117, no. 15, p. 152103, Oct. 2020, doi: 10.1063/5.0021626.

   68. Mahmood R. Mahmoodi, Zahra Fahimi, Shabnam Larimian, Hussein Nili, Hyungjin Kim, and Dmitri Strukov, "A strong physically unclonable function with >280 CRPs and <1.4% BER using passive ReRAM technology," IEEE Solid-State Circuits Letters, vol. 3, pp. 182-185, Jul. 2020, doi: 10.1109/LSSC.2020.3010255.

   69. Jun Tae Jang, Geumho Ahn, Sung-Jin Choi, Dong Myong Kim, Hyungjin Kim*, and Dae Hwan Kim*, "LRS retention fail based on joule heating effect in InGaZnO resistive-switching random access memory," Applied Physics Express, vol. 13, no. 5, p. 054004, May 2020, doi: 10.35848/1882-0786/ab88c1.

   70. Hyungjin Kim, and Byung-Gook Park, "Solving overlapping pattern issues in on-chip learning of bio-inspired neuromorphic system with synaptic transistors," Electronics, vol. 9, no. 1, p. 13, Jan. 2020, doi: 10.3390/electronics9010013. 

Conference Proceedings

Patents

Representative Publications Before Faculty Member

1. Mahmood Mahmoodi*, Hyungjin Kim*, Zahra Fahimi, Hussein Nili, Leonid Sedov, Valentin Polishchuk, and Dmitri Strukov*, "An analog neuro-optimizer with adaptable annealing based on 64×64 0T1R crossbar circuit," in Proc. IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA, pp. 14.7.1-4, Dec. 2019, doi: 10.1109/IEDM19573.2019.8993442.

2. Hyungjin Kim#, Sungmin Hwang#, Jungjin Park, Sangdoo Yun, Jong-Ho Lee, and Byung-Gook Park, "Spiking neural network using synaptic transistors and neuron circuits for pattern recognition with noisy images," IEEE Electron Device Letters, vol. 39, no. 4, pp. 630-633, Apr. 2018, doi: 10.1109/LED.2018.2809661.

3. Hyungjin Kim, Sungmin Hwang, Jungjin Park, and Byung-Gook Park, "Silicon synaptic transistor for hardware-based spiking neural network and neuromorphic system," Nanotechnology, vol. 28, no. 40, p. 405202, Oct. 2017, doi: 10.1088/1361-6528/aa86f8.

4. Hyungjin Kim, Jungjin Park, Min-Woo Kwon, Jong-Ho Lee, and Byung-Gook Park, "Silicon-based floating-body synaptic transistor with frequency-dependent short- and long-term memories," IEEE Electron Device Letters, vol. 37, no. 3, pp. 249-252, Mar. 2016, doi: 10.1109/LED.2016.2521863.