Journal Publications

2026

1. 1. Jinwoo Park and Hyungjin Kim*, "In-memory Euclidean distance computation in a stacked memristor crossbar for hardware self-organizing maps," Advanced Functional Materials, in press, doi: 10.1002/adfm.202531235.

   2. Sangwook Youn, Hwiho Hwang, and Hyungjin Kim*, "Ferroelectric tunnel junction memristor crossbar array with annealing optimization for in-memory computing," Advanced Intelligent Systems, in press, doi: 10.1002/aisy.202500817.

   3. Jinwoo Park, Jungjin Lee, Sangwook Youn, and Hyungjin Kim*, "Step-efficient parallel implementation of n-bit full adders using stateful logic in memristor crossbar arrays," Advanced Intelligent Systems, in press, doi: 10.1002/aisy.202501001.

   4. Jihee Park, Nawoon Kim, Hyesung Na, Hyungjin Kim*, and Sungjun Kim*, "Nonlinear quantized conductance dynamics in vertical SiN RRAM for scalable memory–learning integration," Journal of Materials Science & Technology, vol. 266, pp. 76-91, Sept. 2026, doi: 10.1016/j.jmst.2025.11.034.

   5. Sangwook Youn, Kyuree Kim, Jinwoo Park, and Hyungjin Kim*, "Energy-efficient Ising solver implementations in forming-free memristor crossbar arrays for combinatorial optimization problems," Nano Energy, vol. 148, p. 111633, Feb. 2026, doi: 10.1016/j.nanoen.2025.111633.

   6. Hyunkyung Lee and Hyungjin Kim*, "Changes in learners’ achievement goal orientations and epistemological beliefs in relation to peer assessment in circuit design (회로 설계에서 동료평가에 따른 학습자의 성취목표유형과 인식론적 신념의 변화)," Journal of Engineering Education Research (공학교육연구), vol. 29, no. 1, pp., Jan. 2026, doi: 10.18108/jeer.2026.29.1.3.

   7. Sangwook Youn, Hwiho Hwang, and Hyungjin Kim*, "ZrO2 seed layer effects on switching characteristics and low-frequency noise in HZO ferroelectric tunnel junction array," Journal of Alloys and Compounds, vol. 1050, p. 185701, Jan. 2026, doi: 10.1016/j.jallcom.2025.185701.

   8. Chandreswar Mahata, Muhammad Ismail, Hyungjin Kim*, and Sungjun Kim*, "Optically tunable synaptic plasticity and memory emulation in Au-nanoparticle enhanced HfTiOx/Al2O3-based photonic memristors", Advanced Functional Materials, vol. 36, no. 3, p. e10663, Jan. 2026, doi: 10.1002/adfm.202510663.

2025

1. 9. Donguk Kim, Won Jun Pyo, Sangwook Youn, Jaehee So, Youngseok Kim, Hyungjin Kim*, and Felix Sunjoo Kim*, "Organic electrolyte-gated synaptic transistors with finely tunable 14-bit states based on ion concentration tailoring," Device, vol. 3, no. 2, p. 100940, Dec. 2025, doi: 10.1016/j.device.2025.100940.

   10. Gyeonghae Kim, Sangwook Youn, Jinwoo Park and Hyungjin Kim*, "Configurable kernel map implementation in memristor crossbar for convolution neural network," Advanced Intelligent Systems, vol. 7, no. 11, p. 2500032, Nov. 2025, doi: 10.1002/aisy.202500032.

   11. Hwiho Hwang, Sangwook Youn, and Hyungjin Kim*, "Recent advances in ferroelectric materials, devices, and in-memory computing applications," Nano Convergence, vol. 12, p. 55, Nov. 2025, doi: 10.1186/s40580-025-00520-2.

   12. Dayeon Yu, Suhyeon Ahn, Hwiho Hwang, and Hyungjin Kim*, "Physical unclonable function with enlarged string current variation in NAND flash array by WL selection scheme," IEEE Transactions on Electron Devices, vol. 72, no. 10, pp. 5400-5406, Oct. 2025, doi: 10.1109/TED.2025.3597584.

   13. Jinwoo Park and Hyungjin Kim*, "Physical unclonable function with 3D stacked memristor crossbar array using self-differential pair," ACS Nano, vol. 19, no. 31, pp. 28135-28145, Aug. 2025, doi: 10.1021/acsnano.4c18621.

   14. Jinwoo Park, Hyunjoong Kim, and Hyungjin Kim*, "Bias-independent TRNG circuit using memristor noise signals as entropy source," Advanced Intelligent Systems, vol. 7, no. 6, p. 202400648, Jun. 2025, doi: 10.1002/aisy.202400648.

   15. Hwiho Hwang, Gyeonghae Kim, Dayeon Yu, and Hyungjin Kim*, "Wordline input bias scheme for neural network implementation in 3D-NAND flash," Biomimetics, vol. 10, no. 5, p. 318, May 2025, doi: 10.3390/biomimetics10050318.

   16. Hwiho Hwang, Junsu Yu, Sangwook Youn, Woo Young Choi*, and Hyungjin Kim*, "2C-ternary content addressable memory in memcapacitor crossbar array with NAND flash structure," Small, vol. 21, no. 9, p. 2408618, Mar. 2025, doi: 10.1002/smll.202408618.

   17. Jisung Im, Hansol Kim, Hyungjin Kim*, and Sung Yun Woo*, "Design strategies for BCAT structures: Enhancing DRAM reliability and mitigating row hammer effect," Electronics, vol. 14, no. 3, p. 499, Feb. 2025, doi: 10.3390/electronics14030499.

2024

1. 18. Dayeon Yu, Suhyeon Ahn, Sangwook Youn, Jinwoo Park, and Hyungjin Kim*, "True random number generator using stochastic noise signal of memristor with variation tolerance," Chaos Solitons & Fractals, vol. 189, p. 115708, Dec. 2024, doi: 10.1016/j.chaos.2024.115708.

   19. Sungjoon Kim, Hyeonseung Ji, Kyungchul Park, Hyojin So, Hyungjin Kim, Sungjun kim, and Woo Young Choi, "Memristive architectures exploiting self-compliance multilevel implementation on 1 kb crossbar arrays for online and offline learning neuromorphic applications," ACS Nano, vol. 18, no. 36, pp. 25128-25143, Sept. 2024, doi: 10.1021/acsnano.4c06942.

   20. Sungjoon Kim, Kyungho Hong, Hyungjin Kim, Min-Hwi Kim, and Woo Young Choi, "Overshoot-suppressed memristor array with AlN oxygen barrier for low-power operation in the intelligent neuromorphic systems," Advanced Intelligent Systems, vol. 6, no. 8, p. 2300797, Aug. 2024, doi: 10.1002/aisy.202300797.

   21. Min Suk Song, Hwiho Hwang, Junsu Yu, Sungmin Hwang*, and Hyungjin Kim*, "Annealing effects on charge trap flash with TAHOS structure," Journal of Semiconductor Technology and Science, vol. 24, no. 4, pp. 323-331, Aug. 2024, doi: 10.5573/JSTS.2024.24.4.323.

   22. Hwiho Hwang, Min Suk Song, Sangwook Youn, and Hyungjin Kim*, "True random number generator using memcapacitor with charge trapping layer," IEEE Electron Device Letters, vol. 45, no. 8, pp. 1464-1467, Aug. 2024, doi: 10.1109/LED.2024.3411549.

   23. Suhyeon Ahn, Junsu Yu, Hwiho Hwang, Min Suk Song, Dayeon Yu, Sungmin Hwang, In-Young Chung*, Woo Young Choi*, and Hyungjin Kim*, "Coupling-free readout scheme for memcapacitors with NAND flash structure," IEEE Transactions on Electron Devices, vol. 71, no. 8, pp. 4670-4676, Aug. 2024, doi: 10.1109/TED.2024.3418289.

   24. Sangwook Youn, Yeongjin Hwang, Tae-Hyeon Kim, Sungjoon Kim, Hwiho Hwang, Jinwoo Park, and Hyungjin Kim*, "Threshold learning algorithm for memristive neural network with binary switching behavior," Neural Networks, vol. 176, p. 106355, Aug. 2024, doi: 10.1016/j.neunet.2024.106355.

   25. Seung Min Lee, Ji-Min Park, Suhyeon Ahn, Seong Cheol Jang, Hyungjin Kim*, and Hyun-Suk Kim*, "Inorganic p-type tellurium-based synaptic transistors: Complementary synaptic pairs with n-type devices for energy-efficient operation," ACS Applied Electronic Materials, vol. 6, no. 7, pp. 5371-5378, Jul. 2024, doi: 10.1021/acsaelm.4c01027.

   26. Tae-Hyeon Kim, Sungjoon Kim, Jinwoo Park, Sangwook Youn, and Hyungjin Kim*, "Memristor crossbar array with enhanced device yield for in-memory vector-matrix multiplication," ACS Applied Electronic Materials, vol. 6, no. 6, pp. 4099-4107, Jun. 2024, doi: 10.1021/acsaelm.4c00199.

   27. Sungjoon Kim, Kyungchul Park, Kyungho Hong, Tae-Hyeon Kim, Jinwoo Park, Sangwook Youn, Hyungjin Kim*, and Woo Young Choi*, "Overshoot-suppressed memristor crossbar array with high yield by AlOx oxidation for neuromorphic system," Advanced Materials Technologies, vol. 9, no. 11, p. 2400063, Jun. 2024, doi: 10.1002/admt.202400063.

   28. Hansol Kim, Sung Yun Woo, and Hyungjin Kim*, "Neuron circuit based on a split-gate transistor with nonvolatile memory for homeostatic functions of biological neurons," Biomimetics, vol. 9, no. 6, p. 335, Jun. 2024, doi: 10.3390/biomimetics9060335.

   29. Ajit Kumar, Mokurala Krishnaiah, Jinwoo Park, Dhananjay Mishra, Bidyashakti Dash, Hyeon-Bin Jo, Geun Lee, Sangwook Youn, Hyungjin Kim*, and Sung Hun Jin*, "Multibit, lead-free Cs2SnI6 resistive random access memory with self-compliance for improved accuracy in binary neural network application," Advanced Functional Materials, vol. 34, no. 16, p. 2310780, Apr. 2024, doi: 10.1002/adfm.202310780.

   30. Kyuree Kim, Min Suk Song, Hwiho Hwang, Sungmin Hwang* and Hyungjin Kim*, "A comprehensive review of advanced trends: From artificial synapses to neuromorphic systems with consideration of non-ideal effects," Frontiers in Neuroscience, vol. 18, p. 1279708, Apr. 2024, doi: 10.3389/fnins.2024.1279708.

   31. Sangwook Youn, Jungjin Lee, Sungjoon Kim, Jinwoo Park, Kyuree Kim, and Hyungjin Kim*, "Programmable threshold logic implementations in a memristor crossbar array," Nano Letters, vol. 24, no. 12, pp. 3581-3589, Mar. 2024, doi: 10.1021/acs.nanolett.3c04073.

   32. Jinwoo Park, Sungjoon Kim, Min Suk Song, Sangwook Youn, Kyuree Kim, and Hyungjin Kim*, "Implementation of convolutional neural networks in memristor crossbar arrays with binary activation and weight quantization," ACS Applied Materials & Interfaces, vol. 16, no. 1, pp. 1054-1065, Jan. 2024, doi: 10.1021/acsami.3c13775.

2023

1. 33. Min Suk Song, Hwiho Hwang, Geun Ho Lee, Suhyeon Ahn, Sungmin Hwang*, and Hyungjin Kim*, "Kernel mapping methods of convolutional neural network in 3D NAND flash architecture," Electronics, vol. 12, no. 23, p. 4796, Dec. 2023, doi: 10.3390/electronics12234796.

   34. Sungmin Hwang, Junsu Yu, Min Suk Song, Hwiho Hwang, and Hyungjin Kim*, "Memcapacitor crossbar array with charge trap NAND flash structure for neuromorphic computing," Advanced Science, vol. 10, no. 32, p. 202303817, Nov. 2023, doi: 10.1002/advs.202303817.

   35. Ji-Min Park, Hwiho Hwang, Min Suk Song, Seong Cheol Jang, Jung Hyun Kim, Hyungjin Kim*, and Hyun-Suk Kim*, "All-solid-state synaptic transistors with Li-ion-based electrolyte for linear weight mapping and update in neuromorphic computing system," ACS Applied Materials & Interfaces, vol. 15, no. 40, pp. 47229-47237, Oct. 2023, doi: 10.1021/acsami.3c09162. 

   36. Myung-Hyun Baek and Hyungjin Kim*, "Polysilicon-channel synaptic transistors for implementation of short- and long-term memory characteristics," Biomimetics, vol. 8, no. 4, p. 368, Aug. 2023, doi: 10.3390/biomimetics8040368.

   37. Hyunkyung Lee, Daeun Jung, and Hyungjin Kim*, "Peer assessment for engineering design education: An exploratory study," International Journal of Engineering Education, vol. 39, no. 3, pp. 732-742, May 2023, link.

   38. Min Suk Song, Tae-Hyeon Kim, Hwiho Hwang, Suhyeon Ahn, Hussein Nili, and Hyungjin Kim*, "Optimization of random telegraph noise characteristics in memristor for true random number generator," Advanced Intelligent Systems, vol. 5, no. 5, p. 2200358, May 2023, doi: 10.1002/aisy.202200358. 

   39. Geun Ho Lee, Tae-Hyeon Kim, Sangwook Youn, Jinwoo Park, Sungjoon Kim, and Hyungjin Kim*, "Low-fluctuation nonlinear model using incremental step pulse programming with memristive devices," Chaos Solitons & Fractals, vol. 170, p. 113359, May 2023, doi: 10.1016/j.chaos.2023.113359.

   40. Tae-Hyeon Kim, Kyungho Hong, Sungjoon Kim, Jinwoo Park, Sangwook Youn, Jong-Ho Lee, Byung-Gook Park, Hyungjin Kim*, and Woo Young Choi*, "Fuse devices for pruning in memristive neural network," IEEE Electron Device Letters, vol. 44, no. 3, pp. 520-523, Mar. 2023, doi: 10.1109/LED.2023.3237651.

   41. Sangwook Youn, Sungjoon Kim, Tae-Hyeon Kim, Jinwoo Park, and Hyungjin Kim*, "Memristor crossbar circuit for ternary content-addressable memory with fine tuning operation", Advanced Intelligent Systems, vol. 5, no. 3, p. 2200325, Mar. 2023, doi: 10.1002/aisy.202200325. 

2022

1. 42. Tae-Hyeon Kim, Sungjoon Kim, Kyungho Hong, Hyungjin Kim*, and Byung-Gook Park*, "Enhanced current-voltage nonlinearity by controlling oxygen concentration of TiOx buffer layer for RRAM passive crossbar array," Journal of Semiconductor Technology and Science, vol. 22, no. 6, pp. 417-425, Dec. 2022, doi: 10.5573/JSTS.2022.22.6.417.

   43. Geun Ho Lee, Min Suk Song, Sangwoo Kim, Jiyong Yim, Sungmin Hwang, Junsu Yu, Daewoong Kwon*, and Hyungjin Kim*, "Ferroelectric field-effect transistors for binary neural network with 3-D NAND architecture," IEEE Transactions on Electron Devices, vol. 69, no. 11, pp. 6438-6445, Nov. 2022, doi: 10.1109/TED.2022.3207130.

   44. Woo Sik Choi, Min Suk Song, Hyungjin Kim*, and Dae Hwan Kim*, "Conduction mechanism analysis of abrupt- and gradual-switching InGaZnO memristors," Micromachines, vol. 13, no. 11, p. 1870, Oct. 2022, doi: 10.3390/mi13111870.

   45. Sungjoon Kim, Jinwoo Park, Tae-Hyeon Kim, Kyungho Hong, Yeongjin Hwang, Byung-Gook Park*, and Hyungjin Kim*, "4-bit multilevel operation in overshoot suppressed Al2O3/TiOx RRAM crossbar array," Advanced Intelligent Systems, vol. 4, no. 9, p. 2100273, Sept. 2022, doi: 10.1002/aisy.202100273.

   46. Jinwoo Park, Min Suk Song, Sangwook Youn, Tae-Hyeon Kim, Sungjoon Kim, Kyungho Hong, and Hyungjin Kim*, "Intrinsic variation effect in memristive neural network with weight quantization," Nanotechnology, vol. 33, no. 37, p. 375203, Sept. 2022, doi: 10.1088/1361-6528/ac7651.

   47. Tae-Hyeon Kim, Sungjoon Kim, Kyungho Hong, Jinwoo Park, Sangwook Youn, Jong-Ho Lee, Byung-Gook Park*, and Hyungjin Kim*, "Effect of program error in memristive neural network with weight quantization," IEEE Transactions on Electron Devices, vol. 69, no. 6, pp. 3151-3157, Jun. 2022, doi: 10.1109/TED.2022.3169112.

   48. Woo Sik Choi, Donguk Kim, Tae Jun Yang, Inseok Chae, Changwook Kim, Hyungjin Kim*, and Dae Hwan Kim*, "Electrode-dependent electrical switching characteristics of InGaZnO memristor," Chaos Solitons & Fractals, vol. 158, p. 112106, May 2022, doi: 10.1016/j.chaos.2022.112106.

   49. Shinyoung Park, Sangwook Youn, Jun Tae Jang, Hyungjin Kim*, and Dae Hwan Kim*, "Effect of hydrogen migration in SiO2/Al2O3 stacked gate insulator of InGaZnO thin-film transistors," Crystals, vol. 12, no. 5, p. 594, Apr. 2022, doi: 10.3390/cryst12050594.

   50. Geun Ho Lee, Tae-Hyeon Kim, Min Suk Song, Jinwoo Park, Sungjoon Kim, Kyungho Hong, Yoon Kim, Byung-Gook Park*, and Hyungjin Kim*, "Effect of weight overlap region on neuromorphic system with memristive synaptic devices," Chaos Solitons & Fractals, vol. 157, p. 111999, Apr. 2022, doi: 10.1016/j.chaos.2022.111999.

   51. Sungmin Hwang, Junsu Yu, Geun Ho Lee, Min Suk Song, Jeesoo Chang, Kyung Kyu Min, Taejin Jang, Jong-Ho Lee, Byung-Gook Park*, and Hyungjin Kim*, "Capacitor-based synaptic devices for hardware spiking neural networks," IEEE Electron Device Letters, vol. 43, no. 4, pp. 549-552, Apr. 2022, doi: 10.1109/LED.2022.3149029.

   52. Kyuree Kim and Hyungjin Kim*, "Overview of GAAFET process flow and key modules (Gate-All-Around FET의 전체 공정 과정과 핵심 공정모듈 고찰)," Journal of The Institute of Electronics and Information Engineer (전자공학회논문지), vol. 59, no. 4, pp. 21-30, Apr. 2022, doi: 10.5573/ieie.2022.59.4.21.

   53. Woo Sik Choi, Jun Tae Jang, Donguk Kim, Tae Jun Yang, Changwook Kim, Hyungjin Kim*, and Dae Hwan Kim*, "Influence of Al2O3 layer on InGaZnO memristor crossbar array for neuromorphic applications," Chaos Solitons & Fractals, vol. 156, p. 111813, Mar. 2022, doi: 10.1016/j.chaos.2022.111813.

   54. Manh-Cuong Nguyen, Kitae Lee, Sihyun Kim, Sangwook Youn, Yeongjin Hwang, Hyungjin Kim*, Rino Choi*, and Daewoong Kwon*, "Incremental drain-voltage-ramping training method for ferroelectric field-effect transistor synaptic devices," IEEE Electron Device Letters, vol. 43, no. 1, pp. 17-20, Jan. 2022, doi: 10.1109/LED.2021.3127927.

   55. Kyung Kyu Min, Junsu Yu, Yeonwoo Kim, Chae Soo Kim, Taejin Jang, Sungmin Hwang, Hyungjin Kim, Jong-Ho Lee, Daewoong Kwon*, and Byung-Gook Park*, "Ferroelectricity of pure-HfOx in metal-ferroelectric-insulator-semiconductor stacks and its memory application," Applied Surface Science, vol. 573, p. 151566, Jan. 2022, doi: 10.1016/j.apsusc.2021.151566.

2021

1. 56. Tae-Hyeon Kim, Sungjoon Kim, Kyungho Hong, Jinwoo Park, Yeongjin Hwang, Byung-Gook Park*, and Hyungjin Kim*, "Multilevel switching memristor by compliance current adjustment for off-chip training of neuromorphic system," Chaos Solitons & Fractals, vol. 153, p. 111587, Dec. 2021, doi: 10.1016/j.chaos.2021.111587.

   57. Jinwoo Park, Tae-Hyeon Kim, Sungjoon Kim, Geun Ho Lee, Hussein Nili, and Hyungjin Kim*, "Conduction mechanism effect on physical unclonable function using Al2O3/TiOx memristors," Chaos Solitons & Fractals, vol. 152, p. 111388, Nov. 2021, doi: 10.1016/j.chaos.2021.111388.

   58. Junsu Yu, Kyung Kyu Min, Yeonwoo Kim, Sihyun Kim, Sungmin Hwang, Tae-Hyeon Kim, Changha Kim, Hyungjin Kim, Jong-Ho Lee, Daewoong Kwon, and Byung-Gook Park, "A novel physical unclonable function (PUF) using 16 × 16 pure-HfOx ferroelectric tunnel junction array for security applications," Nanotechnology, vol. 32, no. 48, p. 485202, Nov. 2021, doi: 10.1088/1361-6528/ac1dd5.

   59. Shinyoung Park, Jun Tae Jang, Yeongjin Hwang, Hyunkyu Lee, Woo Sik Choi, Dongyeon Kang, Changwook Kim, Hyungjin Kim*, and Dae Hwan Kim*, "Effect of the gate dielectric layer of flexible InGaZnO synaptic thin-film transistors on learning behavior," ACS Applied Electronic Materials, vol. 3, no. 9, pp. 3972-3979, Sept. 2021, doi: 10.1021/acsaelm.1c00517.

   60. Hyungjin Kim, Mahmood Reza Mahmoodi, Hussein Nili, and Dmitri B. Strukov, "4k-memristor analog-grade passive crossbar circuit," Nature Communications, no. 12, p. 5198, Aug. 2021, doi: 10.1038/s41467-021-25455-0.

   61. Dayoung Kim, Tae-Hyeon Kim, Yunyeong Choi, Geun Ho Lee, Jungwon Lee, Wookyung Sun, Byung-Gook Park, Hyungjin Kim*, and Hyungsoon Shin*, "Selected bit-line current PUF: A non-invasive hardware security primitive based on a memristor crossbar array," IEEE Access, no. 9, pp. 120901-120910, Aug. 2021, doi: 10.1109/ACCESS.2021.3108534.

   62. Yeongjin Hwang, Jeong Hoon Jeon, Juhyun Lee, Jonghyuk Yoon, Felix Sunjoo Kim*, and Hyungjin Kim*, "Effect of threshold voltage window and variation of organic synaptic transistor for neuromorphic system," Journal of Nanoscience and Nanotechnology, vol. 21, no. 8, pp. 4303-4309, Aug. 2021, doi: 10.1166/jnn.2021.19393.

   63. Geun Ho Lee, Sungmin Hwang, Junsu Yu, and Hyungjin Kim*, "Architecture and process integration overview of 3D NAND flash technologies," Applied Sciences, vol. 11, no. 15, p. 6703, Jul. 2021, doi: 10.3390/app11156703.

   64. Tae-Hyeon Kim, Jaewoong Lee, Sungjoon Kim, Jinwoo Park, Byung-Gook Park*, and Hyungjin Kim*, "3-bit multilevel operation with accurate programming scheme in TiOx/Al2O3 memristor crossbar array for quantized neuromorphic system," Nanotechnology, no. 32, vol. 29, p. 295201, Jul. 2021, doi: 10.1088/1361-6528/abf0cc.

   65. Sungmin Hwang, Hyungjin Kim*, and Byung-Gook Park*, "Quantized weight transfer method using spike-timing-dependent plasticity for hardware spiking neural network," Applied Sciences, vol. 11, no. 5, p. 2059, Feb. 2021, doi: 10.3390/app11052059.

   66. Sobia Ali Khan, Geun Ho Lee, Chandreswar Mahata, Muhammad Ismail, Hyungjin Kim*, and Sungjun Kim*, "Bipolar and complementary resistive switching characteristics and neuromorphic system simulation in a Pt/ZnO/TiN synaptic device," Nanomaterials, vol. 11, no. 2, p. 315, Jan. 2021, doi: 10.3390/nano11020315.

2020

1. 67. Sungjoon Kim, Tae-Hyeon Kim, Hyungjin Kim*, and Byung-Gook Park*, "Current suppressed self-compliance characteristics of oxygen rich TiOy inserted Al2O3/TiOx based RRAM," Applied Physics Letters, vol. 117, no. 20, p. 202106, Nov. 2020, doi: 10.1063/5.0027757.

   68. Hyun-Seok Choi, Hyungjin Kim, Jong-Ho Lee, Byung-Gook Park, and Yoon Kim, "AND flash array based on charge trap flash for implementation of convolutional neural networks," IEEE Electron Device Letters, vol. 41, no. 11, pp. 1653-1656, Nov. 2020, doi: 10.1109/LED.2020.3025587.

   69. Jun Tae Jang, Jungi Min, Yeongjin Hwang, Sung-Jin Choi, Dong Myong Kim, Hyungjin Kim*, and Dae Hwan Kim*, "Digital and analog switching characteristics of InGaZnO memristor depending on top electrode material for neuromorphic system," IEEE Access, vol. 8, pp. 192304-192311, Oct. 2020, doi: 10.1109/ACCESS.2020.3032188.

   70. Tae-Hyeon Kim, Hussein Nili, Min-Hwi Kim, Kyung Kyu Min, Byung-Gook Park*, and Hyungjin Kim*, "Reset-voltage-dependent precise tuning operation of TiOx/Al2O3 memristive crossbar array," Applied Physics Letters, vol. 117, no. 15, p. 152103, Oct. 2020, doi: 10.1063/5.0021626.

   71. Mahmood R. Mahmoodi, Zahra Fahimi, Shabnam Larimian, Hussein Nili, Hyungjin Kim, and Dmitri Strukov, "A strong physically unclonable function with >280 CRPs and <1.4% BER using passive ReRAM technology," IEEE Solid-State Circuits Letters, vol. 3, pp. 182-185, Jul. 2020, doi: 10.1109/LSSC.2020.3010255.

   72. Jun Tae Jang, Geumho Ahn, Sung-Jin Choi, Dong Myong Kim, Hyungjin Kim*, and Dae Hwan Kim*, "LRS retention fail based on joule heating effect in InGaZnO resistive-switching random access memory," Applied Physics Express, vol. 13, no. 5, p. 054004, May 2020, doi: 10.35848/1882-0786/ab88c1.

   73. Hyungjin Kim, and Byung-Gook Park, "Solving overlapping pattern issues in on-chip learning of bio-inspired neuromorphic system with synaptic transistors," Electronics, vol. 9, no. 1, p. 13, Jan. 2020, doi: 10.3390/electronics9010013.