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1. Advancing Emerging Ultra-Wide Bandgap Semiconductor GeO2: Growth, Doping, and Device Integration by MOCVD
1.1. Epitaxial growth of rutile GeO2 thin films
1.1. Epitaxial growth of rutile GeO2 thin films
Imteaz Rahaman et al., Applied Physics Letters, 126 (21), 212106, 2025.
Imteaz Rahaman et al., ACS Appl. Electronic Materials, 7, 7, 2848-2854, 2025.
Imteaz Rahaman et al. Appl. Phys. Lett. 125, 102103, 2024.
1.2. Doping of rutile GeO2 thin films
1.2. Doping of rutile GeO2 thin films
J.L. Lyons et al., J. Phys.: Condens. Matter 36, 085501, 2024.
1.3. Device integration of rutile GeO2
1.3. Device integration of rutile GeO2
Details will be updated soon!
2. Integration of P-type Diamond with n-type β-Ga2O3
2.1. Fabrication of Diamond films on β-Ga2O3
2.1. Fabrication of Diamond films on β-Ga2O3
Imteaz Rahaman et al., "Optimization of Seeding Parameters for Growing Large-Scale Polycrystalline Diamond on β-Ga2O3", Thesis, Texas State University, San Marcos, Texas, USA, 2023.
2.2. Diamond/β-Ga2O3 and Diamond/GaN Hetero-p-n Junctions Using Mechanical Grafting.
2.2. Diamond/β-Ga2O3 and Diamond/GaN Hetero-p-n Junctions Using Mechanical Grafting.
Imteaz Rahaman et al., Semicond. Sci. Technol. 40 085002, 2025.
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