Imteaz Rahaman | Graduate Research Assistant, ECE | University of Utah
Imteaz Rahaman is a PhD researcher in Electrical and Computer Engineering at the University of Utah, working under the supervision of Dr. Kai Fu. His research focuses on ultra-wide bandgap (UWBG) semiconductors, particularly rutile Germanium dioxide (r-GeO2), with an emphasis on thin film growth by metal-organic chemical vapor deposition (MOCVD), doping, and advanced characterization of crystal quality, interfaces, and defects. In addition to GeO2, his research also focuses on diamond and β-Ga2O3 p–n heterojunctions and related devices.
Imteaz Rahaman is currently pursuing his Ph.D. in Electrical and Computer Engineering at the University of Utah, Salt Lake City, Utah, USA (2023–present). He received his M.S. degree in Electrical Engineering from Texas State University, San Marcos, Texas, USA, in 2023, and his B.S. degree in Electrical and Electronic Engineering from Rajshahi University of Engineering and Technology (RUET), Bangladesh, in 2019.
His research focuses on the growth and device applications of ultra-wide bandgap (UWBG) semiconductors for next-generation high-power electronic devices. In particular, he investigates MOCVD-grown rutile GeO2, diamond, and Ga2O3 thin films using advanced epitaxial growth and integration techniques. His long-term goal is to enable efficient, reliable, and scalable UWBG semiconductor devices that can address the limitations of existing power electronics.
To date, Imteaz has authored 14 peer-reviewed journal articles as first author and co-authored an additional 14 publications, bringing his total to more than 28 journal articles in internationally recognized peer-reviewed journals. He has also contributed to more than 25 conference proceedings and presentations at leading international conferences. His work has been published in prominent journals such as Applied Physics Letters (APL), ACS Applied Electronic Materials, IEEE Transactions on Electron Devices (TED), IEEE Electron Device Letters (EDL), Semiconductor Science and Technology, Materials Science in Semiconductor Processing, and ACS Applied Materials & Interfaces. He is among the very first researchers to successfully achieve full coverage rutile GeO2 films by MOCVD, a significant step forward in UWBG material development and device processing. His contributions have been recognized through several honors and achievements. His research was featured in Applied Physics Letters, an Editorial Choice, and selected as a journal cover in ACS Applied Electronic Materials. He has presented his findings at major international conferences, including the U.S. Gallium Oxide Workshop (GOX 2025), where he also contributed as a volunteer. According to Google Scholar, his research has been cited more than 225 times, with an h-index of 9.
At the University of Utah, he actively supports the student community as the Sports Secretary of the Bangladeshi Student Association (BSAUU) for 2025–2026, where he organizes cultural and sporting events such as cricket tournaments. In addition, he was named Player of the Tournament in the BSAUU Cricket Tournament 2024, reflecting his leadership and teamwork both on and off the field. He has also received recognition for his teaching assistantship, mentorship, and service to academic and professional communities.
Education
2023, M.S., Electrical Engineering, Texas State University, San Marcos, Texas, USA.
2019, B.S., Electrical and Electronic Engineering, Rajshahi University of Engineering and Technology, Bangladesh.
Research Highlights
Recent News
October 2025
Imteaz's work on "Study of Optical Properties of MOCVD-Grown Rutile GeO2 Films" has been accepted in Journal of Physics D: Applied Physics.
September 2025
Our paper “Carbon-Nanotube/β-Ga2O3 Heterojunction PIN Diodes” is featured on the cover of ACS Applied Electronic Materials.
Our paper “Phase Evolution and Substrate-Dependent Nucleation of Quartz GeO₂ Films Grown by MOCVD on r- and c-Plane Sapphires” has been accepted for publication in physica status solidi (a)
August 2025
Imteaz Rahaman presented his research at the 8th U.S. Gallium Oxide Workshop (GOX 2025) in Salt Lake City (Utah), with one oral and one poster presentation.
Imteaz Rahaman was a nominee for the best paper award for his poster presentation, "Advanced MOCVD Growth and TEM Analysis of Rutile GeO2", at the 8th U.S. Gallium Oxide Workshop (GOX 2025) in Salt Lake City (Utah).
July 2025
Imteaz's work on "Investigation of diamond/Ga2O3 and diamond/GaN hetero-p-n junctions using mechanical grafting" has been published in semiconductor science and Technology. (Most read article)