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High EUV Absorbing Metal Based Inorganic PR
High EUV Absorbing Metal Based Inorganic PR
In semiconductor industry, EUV (13.5 nm) lithography is an important factor in determining the superiority of technology leadership. Many global companies invest in EUV lithography for logic devices and DRAMs applications. The EUV light has 14.3 times higher energy than the energy of ArF. The high resolution and low production cost of EUVL can be achieved by reducing patterning steps and eliminating defects with single patterning of EUVL. However, the stochastic blurring effect limit from low EUV absorption and low EUV sensitivity has been significant challenges for next generation semiconductor development.
In semiconductor industry, EUV (13.5 nm) lithography is an important factor in determining the superiority of technology leadership. Many global companies invest in EUV lithography for logic devices and DRAMs applications. The EUV light has 14.3 times higher energy than the energy of ArF. The high resolution and low production cost of EUVL can be achieved by reducing patterning steps and eliminating defects with single patterning of EUVL. However, the stochastic blurring effect limit from low EUV absorption and low EUV sensitivity has been significant challenges for next generation semiconductor development.
Here, high EUV absorbing metal based inorganic materials can be promising candidates for EUV lithography. It has advantages of high EUV absorption rate, short mean-free path improving electron blur, high etch resistance, and possibility of sensitivity engineering based on the property of metals with large redox potential. We are developing advanced high EUV absorbing inorganic photoresist materials for next-generation electronics.
Here, high EUV absorbing metal based inorganic materials can be promising candidates for EUV lithography. It has advantages of high EUV absorption rate, short mean-free path improving electron blur, high etch resistance, and possibility of sensitivity engineering based on the property of metals with large redox potential. We are developing advanced high EUV absorbing inorganic photoresist materials for next-generation electronics.
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