Quantum Photonics

based on

Semiconductor

KIST 반도체 양자 포토닉스 연구실 인턴, 대학원생 모집 공고

급여조건 : KIST 원내 규정에 따른 석사/박사 인건비 지급

입사형태 : 학연생 (고려대, 한양대, 경희대) 또는 KU-KIST

연구내용 : 1. 양자 광원 기반 광소자, 2. 양자 소용돌이 기반 광 소자, 3. 양자 광원 기반 광 소자

지원문의처 : hgsong@kist.re.kr (자기소개서 1장 및 성적을 포함한 CV 1장)

Senior Researcher, Dr. Hyun Gyu Song (송현규)

(e-mail : hgsong@kist.re.kr, google scholar)

Welcome to "Quantum Photonics based on Semiconductor Laboratory" homepage. We have been studied with strong light matter interaction between microcavity and semiconductor for classic to quantum photonic devices. Currently, we are making "Room temperature dipolar exciton polariton Platform". This development of platform require students with various background including physics, materials, electrical engineering. Regardless of your major, if you interested in light-matter interaction for photonic device application, you can join us. Feel free to e-mail me for applying our laboratory. We provide full funding resources.

저희 연구실 홈페이지에 오신것을 환영합니다. 우리 연구실에서는 마이크로 공진기와 반도체의 강한 상호작용의 결과물인 엑시톤 폴라리톤 형성을 통한 신개념 고전 및 양자 광소자 개발을 주로 하고있습니다. 현재는, "강한 상호작용이 가능한 상온 엑시톤 폴라리톤 플랫폼"에 대하여 연구가 진행 중에 있습니다. 이 플랫폼 개발에는, 물리, 재료, 전기전자 등 다양한 전문분야의 연구자들이 필요합니다. 여러분의 전공과 상관없이, 빛과 물질의 상호작용 기반의 광 소자 연구에 관심이 있으신 분들은 저희 연구팀에 합류 할 수 있습니다.

Academic Career

2007.3 ~ 2014.2 BS degree, Physics, Hanyang University, Korea

2014.3 ~ 2020.8 MS, PhD degree, Physics, KAIST, Korea

2020.9 ~ 2020.11 Postdoc, Physics, KAIST, Korea

2020.11 ~ 2021.8 Senior engineer, Samsung R&D center, Samsung electronics, Korea

2021.9 ~ 2022.2 Scientist, Sensor System Research, KIST, Korea

2022.3 ~ Senior Scientist, Nanophotonic System Research, KIST, Korea

Representative Paper (†: Equal contribution, *:Corresponding Author)

[21] “Polariton condensate far-detuned from exciton resonance in WS2 bound sates in the continuum” J. Sung†, J. Kim†, H. S. Lee, W. H. Choi, M. Jeong, J. Lee, S. Kim, D.-J. Shin, D. Choi, J. Rho*, S.-H. Gong*, H. G. Song*, Nature Communications (Accepted)

[20] “Ultrafast topological control ” H. G. Song*, S.-H. Gong*, Nature Physics, News & Veiws (2025)

[19] “Tailored fabrication of a self-rolled-up AlGaN/GaN tubular structure with photoelectrochemical etching ” H Hwang, S Ahn, H. G. Song, KY Woo, YH Cho* , Optics Letters 49, 1945 (2024)

[18] “Label-Free Optical Detection of Calcium Ion Influx in Cell-Derived Nanovesicles Using a Conical Au/PDMS Biosensor” J. Kwak, W. Kim, H. Cho, J. Han, S. J. Sim, H. G. Song*, Y. Park*, H. S. Song*, Lab on a chip 24, 4138 (2024)

[17] “Enhancement of Single-Photon Purity and Coherence of III-Nitride Quantum Dot with Polarization-Controlled Quasi-Resonant Excitation”, S. Jun, M. Choi, B. Kim, M. Morassi, M. Tchernycheva, H. G. Song, H. Yeo, N. Gogneau, Y. Cho*, Small 2205229 (2023)

[16] “Influence of wafer quality on chip size-dependent efficiency variation in blue and green micro light-emitting diodes”, K. Woo, H. G. Song, K. Lee, Y. Sim & Y. Cho*, Scientific Reports 12, 7955 (2022)

[15] “Nanoscale Focus Pinspot for High-Purity Quantum Emitters via Focused-Ion-Beam-Induced Luminescence Quenching”, M. Choi, S. Jun, K. Y. Woo, H. G. Song, H.-S. Yeo, S. Choi, D. Park, C.-H. Park, Y.-H. Cho*, ACS nano 15, 11317 (2021)

[14] “Room-temperature polaritonic non-Hermitian system with single microcavity”, H. G. Song, M. H. Choi, K. Y. Woo, C. H. Park, and Y.-H. Cho*, Nature photonics 15, 582 (2021)

[13] “AlGaN Deep Ultraviolet Light-Emitting Diodes with Localized Surface Plasmon Resonance by high density array of 40 nm Al Nanoparticles”, J. W. Lee, G. Ha, J. Park, H. G. Song, J. Park, J. Lee, , Y.-H. Cho, J.-L. Lee, J. K. Kim*, and Jong Kyu Kim*, ACS Applied Materials & Interfaces 12, 36339 (2020)

[12] “Growth of a-axial GaN core nanowires, semi-polar (1101) GaN/InGaN multiple quantum well co-axial nanowires on Si substrate, and their carrier dynamics", M. Johar, W. Aadil, H. G. Song, M. Hassan, I. Bagal, Y.-H. Cho, and S.-W. Ryu*, Optical Materials 105, 109854 (2020)

[11] “Three-Dimensional Hierarchical Semi-polar GaN/InGaN MQW Coaxial Nanowires on a Patterned Si Nanowire Template”, M. Johar, T. Kim, H. G. Song, A. Waseem, J.-H. Kang, M. Hassan, I. V. Bagal, Y.-H. Cho, S.-W. Ryu*, Nanoscale Advances 2, 1654 (2020)

[10] “Universal and scalable route to fabricate GaN nanowire-based LED on amorphous substrate by MOCVD”, M. A. Johar, H. G. Song, A. Waseem, M. A. Hassan, I. V. Bagal, Y.-H. Cho, and S.-W. Ryu*, Applied Materials Today 19, 100541 (2020).

[9] “Orthogonally Polarized, Dual-Wavelength Quantum Wire Network Emitters Embedded in Single Microrod”, S. Choi†, H. G. Song†, S. Cho, and Y.-H. Cho*, Nano Letters 19, 8454 (2019).

[8] “Tailoring the potential landscape of room-temperature single-mode whispering gallery polariton condensate”, H. G. Song, S. Choi, C. H. Park, S.-H. Gong, C. Lee, M. S. Kwon, D. G. Choi, K. Y. Woo, and Y.-H. Cho*, Optica 6, 1313 (2019).

[7] “Interplay of strain and intermixing effects on direct-bandgap optical transition in strained Ge-on-Si under thermal annealing”, C. Lee, Y.-S. Yoo, B. Ki, M.-H. Jang, S.-H. Lim, H. G. Song, J.-H. Cho, J.Oh, and Y.-H. Cho*, Scientific Reorts 9, 1 (2019).

[6] “Optical properties of GaN nanowires grown on chemical vapor deposited-graphene”, L. Mancini, M. Morassi, C. Sinito, O. Brandt, L. Geelhaar, H. G. Song, Y.-H. Cho, N. Guan, A. Cavanna, J. Njeim, A. Madouri, C. Barbier, L. Largeau, A. Babichev, F. H. Julien, L. Travers, F. Oehler, N. Gogneau, J. C. Harmand, and M. Tchernycheva*, Nanotechnology 30, 214005 (2019).

[5] “Ultrafast carrier dynamics of conformally grown semi-polar (1122) GaN/InGaN multiple quantum well co-axial nanowires on m-axial GaN core nanowires”, M. A. Johar, H. G. Song, A. Waseem, J.-H. Kang, J.-S. Ha, Y.-H. Cho, and S. W. Ryu*, Nanoscale 11, 10932 (2019).

[4] “Axial Inhomogeneity of Mg-Doped GaN Rods: A Strong Correlation among Componential, Electrical, and Optical Analyses”, S. Choi, H. G. Song, Y.-S. Yoo, C. Lee, K. Y. Woo, E. Lee, S. David Roh, and Y.-H. Cho*, ACS Photonics 5, 2825 (2018).

[3] “Morphology Tailoring and Growth Mechanism of Indium-Rich InGaN/GaN Axial Nanowire Heterostructures by Plasma-Assisted Molecular Beam Epitaxy”, M. Morassi, L. Largeau, F. Oehler, H. G. Song, L. Travers, F. H. Julien, J.-C. Harmand, Y.-H. Cho, F. Glas, M. Tchernycheva*, and N. Gogneau*, Crystal Growth & Design 18, 2545 (2018).

[2] "Three-dimensional GaN dodecagonal ring structure for highly efficient phosphor-free warm white light-emitting diodes", Y. C. Sim, S.-H. Lim, Y. S. Yoo, M. H. Jang, S. Choi, H. S. Yeo, K. Y. Woo, H. G. Song, and Y.-H. Cho*, Nanoscale 10, 4686 (2018).

[1] "Electrically driven, highly efficient three-dimensional GaN-based light emitting diodes fabricated by self-aligned twofold epitaxial lateral overgrowth", Y.-S. Yoo, H. G. Song, M.-H Jang, S.-W Lee, and Y.-H. Cho*, Scientific Reports 7, 9663 (2017).