HJT Solar Cell

What Is HJT Solar Cell?
Superior temperature coefficient
Extremely low LID and PID

Huasun hjt solar cell technology was made of ultra-thin N-type silicon wafer which employs 0BB/SMBB and μc-Si technology. The champion efficiency has reached 26.5% in mass production, and there is a clear path of efficiency improvement with huge potential.
 

Huasun HJT G12 Solar Cell
G12-0BB HJT Solar Cell
Format: N-type, 210.1mm*105.05mm±0.15mm

Thickness: 110+20/-10μm, 120+20/-10μm

Max. Power: 5.56W

Max. Efficiency: 25.2%

G12-20BB HJT Solar Cell
Format: N-type, 210.1mm*105.05mm±0.15mm
Thickness: 110+20/-10μm, 120+20/-10μm

Max. Power: 5.78W

Max. Efficiency: 26.2%

G12R-0BB HJT Solar Cell
Format: N-type, 182.1mm*105.05mm±0.15mm
Thickness: 110+20/-10μm, 120+20/-10μm

Max. Power: 5.01W

Max. Efficiency: 26.2%

G12R-18BB HJT Solar Cell
Format: N-type, 182.1mm*105mm±0.15mm
Thickness: 110+20/-10μm, 120+20/-10μm

Max. Power: 5.01W

Max. Efficiency: 26.2%

G10-18BB HJT Solar Cell
Format: N-type, 182.1mm*91.75mm±0.25mm
Thickness: 110+20/-10μm, 120+20/-10μm

Max. Power: 4.27W

Max. Efficiency: 25.6%

Characteristics of Huasun HJT Solar Cell
Higher HJT Solar Cell Efficiency

HJT cell uses α-Si thin-film as passivation materials to reduce the loss caused by the migration, which increases the open circuit voltage to 750mV.

Natural Symmertrical Bifacial Structure

Up to 97% bifaciality faciliates more sunlight to be captured and converted into power on the backside.

Superior Temperature Coefficient
The temperature coefficient of Huasun HJT himalaya cell is -0.24%/℃, which ensures more power output in high temperature environment.

SMBB Technology
Minimize the path of flowing current and lower resistance-related power losses, further improving cell efficiency.

As a hjt solar cell manufacturer, we will do our best to meet all the needs of customers.

If you want to know more about g12 solar cell size and hjt solar cell structure, please visit our website.

Anhui Huasun Energy Co., Ltd (hereinafter referred to as "Huasun"), founded in July 2020, is a technological innovation enterprise specialized in the R&D and large-scale manufacturing of ultra-high efficiency N-type silicon heterojunction (HJT) solar wafer, cell and module.