The 26th HU-SNU Joint Symposium Satellite Session

Next-generation oxide semiconductor materials and devices

November 1-3, 2023

Research Institute for Electronic Science, Hokkaido University

The session covers fundamental properties including structural, chemical, and electrical properties of alkali earth stannates, ASnO3 (A = Ca, Sr, and Ba). Especially, electron-doped BaSnO3 is one of the essential energy materials because it improves the conversion efficiency of solar cells. In 2012, Prof. Char at SNU found that electron-doped BaSnO3 single crystals exhibit extremely high electron mobility of 320 cm2/Vs at room temperature, and therefore BaSnO3 has been extensively studied. On the other hand, Prof. Ohta at HU is studying the electron transport properties of SrSnO3, which has a larger bandgap. Recently, both groups have collaborated on the topic of two-dimensional electron gases that form at the polar heterointerface. They used the electric field thermopower modulation method to clarify the effective thickness of the two-dimensional electron gases. We will cover both experimental and theoretical aspects of the topics.

The goal of this session is to provide a platform to present and discuss recent advances in the growth, characterization, material design, and property prediction and optimization of functional materials and to bring together researchers, scientists, and students to exchange ideas. The satellite session will be held at Research Institute for Electronic Science, Hokkaido University from Nov. 2 and 3, 2023.

Day 1: November 1st

15:00-20:30 Plenary session and reception

Day 2: November 2nd

Venue Conference room, Research Institute for Electronic Science, Hokkaido University

Organizers Hiromichi Ohta (HU), Tsukasa Katayama (HU), Yusaku Magari (HU), Kookrin Char (SNU)

Secretary Mamiko Ozaki

Program

09:50-10:00 Welcoming remarks Prof. Kookrin Char (SNU), Prof. Hiromichi Ohta (HU)

10:00-11:00 "2DEG state at LaInO3/BaSnO3 perovskite oxide interface" Prof. Kookrin Char (SNU)

11:00-11:30 "All-epitaxial perovskite double-gate field effect transistor" Juhan Kim (SNU)

11:30-12:00 "All-perovskite ferroelectric field effect transistor based on BaSnO3" Hahoon Lee (SNU)

12:00-13:30 Lunch

13:30-14:00 "Introduction of Laboratory of Functional Thin Film Materials" Prof. Hiromichi Ohta (HU)

14:00-14:30 "Antiferroelectric-to-ferroelectric phase transition in hexagonal rare-earth iron oxides" Prof. Tsukasa Katayama (HU)

14:30-15:00 "High mobility transparent thin-film transistors with polycrystalline In2O3:H channel layer" Prof. Yusaku Magari (HU)

15:00-15:30 Coffee break

15:30-16:00 "Flexible epitaxial BaTiO3 films with bulk-like ferroelectricity and piezoelectricity" Lizhikun Gong (HU)

16:00-16:30 "Solid-state electrochemical thermal transistors with perovskite cobalt oxide-based solid solutions as the active layers" Zhiping Bian (HU)

16:30-17:00 "Preparation and thermoelectric properties of freestanding Ba1/3CoO2 single crystalline films" Kungwan Kang (HU)

18:00-20:00 Informal discussion