1. H. Li,* H. Zhang, J. Song, P. Li, S. Nakamura, S. P. DenBaars, “Toward heteroepitaxially grown semipolar GaN laser diodes under electrically-injected continuous-wave mode: from materials to lasers,” Submitted to Applied Physics Review, Under review, 2020.
2. H. Li,* H. Zhang, P. Li, J. Song, S. Nakamura, S. P. DenBaars, “Analysis of temperature-dependent electroluminescence properties of heteroepitaxial semipolar (20-21) blue laser diodes”, Submitted to Optics Express, Under review, 2020.
3. H. Zhang, P. Li, H. Li*, S. Nakamura, S. P. DenBaars, “Electrically driven, highly polarized monolithic white semipolar (20-21) InGaN micro-light-emitting diodes with surface plasmon coupled indium tin oxide gratings,” Accepted by Applied Physics Letter, 2020. (Corresponding author) (Editor’s Pick)
4. P. Li, H. Li*, H. Zhang, M. Iza, J. Speck, S. Nakamura, S. P. DenBaars, “Optimization of efficient metalorganic chemical vapor deposition grown TJs for InGaN light-emitting diodes: epitaxy design and light extraction simulation,” Submitted to Applied Surface Science, Under Review, 2020. (Corresponding author)
5. P. Li, H. Zhang, H. Li*, Y. Zhang. Y. Yao, N. Palmquist, M. Iza, J. Speck, S. Nakamura, S. P. DenBaars, “Metalorganic chemical vapor deposition grown n-InGaN/n-GaN tunnel junctions for micro-light-emitting diodes with very low forward voltage,” Semiconductor Science Technology, 35 125023, 2020. (Corresponding author)
6. P. Li, H. Li*, H. Zhang, M. Iza, , J. Speck, S. Nakamura, S. P. DenBaars, “Optimization of efficient metalorganic chemical vapor deposition grown TJs for InGaN light-emitting diodes: epitaxy design and light extraction simulation,” Submitted to Applied Surface Science, Under review, 2020. (Corresponding author)
7. H. Zhang, H. Li*, P. Li, J. Song, J. S. Speck, S. Nakamura, S. P. DenBaars, “Room-temperature continuous-wave electrically driven semipolar (20-21) blue laser diodes heteroepitaxially grown on sapphire substrate,” ACS Photonics 7, 1662, 2020. (Corresponding author). (Covered by Semiconductor Today: http://www.semiconductor-today.com/news_items/2020/aug/ucsb-060820.shtml)
8. H. Li, P. Li, H. Zhang, S. Nakamura, S. P. DenBaars, “Demonstration of efficient semipolar 410 nm violet laser diodes heteroepitaxially grown on high quality GaN/sapphire templates,” ACS Applied Electronics Materials, 2, 1874, 2020.
9. P. Li, H. Zhang, H. Li*, M. Iza, Y. Yao, M. S. Wong, N. Palmquist, J. S. Sspeck, S. Nakamura, S. P. DenBaars “Size-independent low voltage of InGaN micro-light-emitting diodes with epitaxial tunnel junctions using selective area growth by metalorganic chemical vapor deposition,” Optics Express, 28, 18707, 2020. (Corresponding author) (Featured by Semiconductor Today: http://www.semiconductor-today.com/news_items/2020/jul/ucsb-160720.shtml)
10. H. Li*, P. Li, H. Zhang, Y. Chow, M. S. Wong, S. Pinna, J. Klamkin, J. S. Sspeck, S. Nakamura, S. P. DenBaars, “Electrically driven, polarized, phosphor-free white semipolar (20-21) InGaN light-emitting diodes grown on semipolar bulk GaN substrate,” Optics Express, 28, 13569, 2020. (Covered by Semiconductor Today: http://www.semiconductor-today.com/news_items/2020/jun/ucsb-110620.shtml )
11. H. Li*, H. Zhang, P. Li, M. S Wong, Y. C. Chow, S. Pinna, J. Klamkin, P. Mierry, J. Speck, S. Nakamura, S. P DenBaars, “Development of efficient semipolar InGaN long wavelength light-emitting diodes and blue laser diodes grown on high quality semipolar GaN/sapphire template,” Journal of Physics: Photonics, 2, 18150, 2020.
12. M. Khoury, H. Li, B. Bonef, T. Mates, F. Wu, P. Li, M. S. Wong, H. Zhang, J. Song, J. Choi, J. S. Speck, S. Nakamura, and S. P. DenBaars “560 nm InGaN micro-LEDs on Low-defect Density and Scalable (20-21) Semipolar GaN on Patterned Sapphire Substrates,” Optics Express, 28, 18150, 2020.
13. M. Khoury, H. Li*, Panpan Li, Y. C. Chow, B. Bonef, H. Zhang, M. S. Wong, S. Pinna, J. Song, J. Choi, J. S. Speck, S. Nakamura, and S. P. DenBaars, “Polarized monolithic white semipolar (20-21) InGaN light-emitting diodes grown on high quality (20-21) GaN/sapphire templates and its application to visible light communication,” Nano Energy, 67, 104236, 2020. (Corresponding author)
14. M. Khoury*, H. Li*, H. Zhang, B. Bonef, D. Cohen, F. Wu, M. Wong, P. DeMierry, J. S. Speck, S. Nakamura, and S. P. DenBaars, “Demonstration of First Electrically Injected Semipolar Laser Diode on Low Defect Density Scalable Sapphire Substrates,” ACS Appl. Mat. Int. 11, 47106, 2019. (Equally contribution)
15. T. Kamikawa, S. Grandrothula, M. Araki, H. Li, V. Bonito Oliva, F. Wu, D. Cohen, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Realization of thin-film m-plane InGaN laser diode fabricated by epitaxial lateral overgrowth and mechanical separation from a reusable growth substrate,” Optics Express 27, 24717, 2019.
16. H. Li,* M. S Wong, M. Khoury, B. Bonef, H. Zhang, Y. C. Chow, P. Li, J. Kearns, A. A Taylor, P. De Mierry, Z. Hassan, S. Nakamura, S. P DenBaars, “Study of efficient semipolar (11-22) InGaN green micro-light-emitting diodes on high-quality (11-22) GaN/sapphire template”, Optics Express 27, 24154, 2019.
17. P. Li, Y. Zhao, H. Li,* Z. Li, Y. Zhang, J. Kang, M. Liang, Z. Liu, X. Yi, and G .Wang, Highly efficient InGaN green mini-size flipchip light-emitting diodes with AlGaN insertion layer, Nanotechnology 30, 095203, 2019. (Corresponding author)
18. P. Li, Y. Zhao, H. Li,* J. Che, Z. Zhang, Z. Li, Y. Zhang, L. Wang, M. Liang, X. Yi, and G. Wang, “Very high external quantum efficiency and wall-plug efficiency 527 nm InGaN green LEDs by MOCVD”, Optics Express 26 (25), 33108-33115, 2018. (Corresponding author)
19. M. Khoury, H. Li,* B. Bonef, L. Y. Kuritzky, A. J. Mughal, S. Nakamura, J. S. Speck, and S. P. DenBaars, “Semipolar GaN templates on sapphire: 432 nm InGaN light-emitting diodes and light extraction simulations”, Appl. Phys. Express 11, 036501, 2018. (Equally contribution)
20. P. Li, Y. Zhao, X. Yi, H. Li*, “Effects of a Reduced Effective Active Region Volume on Wavelength-Dependent Efficiency Droop of InGaN-Based Light-Emitting Diodes”, Applied Sciences 8, 2138, 2018. (Corresponding author)
21. Y. Zhang,* H. Li,* L. Liu, P. Li, L. Wang, X. Yi, G. Wang, “UV-C whispering-gallery modes in AlN microdisks with AlGaN-based multiple quantum wells on Si substrate,” Journal of Nanophotonics 12, 043502, 2018. (Equally contribution)
22. I. Demir, H. Li, Y. Robin, R. McClintock, S. Elagoz, M. Razeghi. “Sandwich method to grow high quality AlN by MOCVD,” J. Phys. D: Appl. Phys. 51, 085104, 2018.
23. P. Li, B. Bonef, M. Khoury, G. Lheureux, H. Li,* J. Kang, S. Nakamura and S. P. DenBaars, “Carrier dynamics of two distinct localized centers in 530 nm InGaN green light-emitting diodes”, Superlattices and Microstructures, 113, 684, 2018. (Corresponding author)
24. H. Li,* M. Khoury, B. Bonef, A. I. Alhassan, A. J. Mughal, E. Azimah, M. E.A. Samsudin, P. De Mierry, S. Nakamura, J. S. Speck, and S. P. DenBaars, “Efficient Semipolar (11-22) 550 nm Yellow/Green InGaN Light-Emitting Diodes on Low Defect Density (11–22) GaN/Sapphire Templates”, ACS Appl. Mater. Interfaces, 9, 36417, 2017.
25. M. Khoury, H. Li, L. Y. Kuritzky, A. J. Mughal, P. DeMierry, S. Nakamura, J. S. Speck S. P. DenBaars, “444 nm InGaN light emitting diodes on low-defect-density GaN templates on patterned sapphire”, Appl. Phys. Express 10, 106501, 2017. (Equally contribution)
26. Y. Zhang, H. Li, P. Li, A. Dehzangi, L. Wang, X. Yi, G. Wang, “Optically-pumped single-mode deep-ultraviolet microdisk lasers with AlGaN-based multiple quantum wells on Si substrate”, IEEE Photonics J. 9, 2400508, 2017. (Equally contribution)
27. L. Wang, Z. Liu, Z. Li, Y. Zhang, H. Li, X. Yi, J. Wang, G. Wang, J. Li, “Nanostructure nitride light emitting diodes via the Talbot effect using improved colloidal photolithography”, Nanoscale 9, 7021, 2017.
28. J. Kang, V.Q. Dang, H. Li, S. Moon, P. Li, Y. Kim, C. Kim, J. Choi, H. Choi, Z. Liu, “Broadband light-absorption InGaN photoanode assisted by imprint patterning and ZnO nanowire growth for energy conversion”, Nanotechnology 28, 045401, 2016.
29. J. Kang, V. Dang, H. Li, S. Moon, P. Li, Y. Kim, C. Kim, H. Choi, Z. Liu, H. Lee, “InGaN-based photoanode with ZnO nanowires for water splitting”, Nano convergence 3, 34, 2016.
30. Z-H. Zhang, Y. Zhang, H. Li, S. Xu, C. Geng, W Bi, “On the Importance of the Polarity for GaN/InGaN Last Quantum Barriers in III-Nitride-Based Light-Emitting Diodes”, IEEE Photonics J. 8, 1, 2016.
31. L. Wang, Z. Liu, X. Yi, Y. Zhang, H. Li, J. Li, G. Wang, “Analysis of symmetry breaking configurations in metal nanocavities: Identification of resonances for generating high-order magnetic modes and multiple tunable magnetic-electric Fano resonances”, J. Appl. Phys. 119, 173106, 2016.
32. H. Li, P. Li, J. Kang, J. Ding, J. Ma, Y. Zhang, X. Yi, G. Wang, “Broadband full-color monolithic InGaN light-emitting diodes by self-assembled InGaN quantum dots”, Scientific Reports 6, 35217, 2016.
33. P. Li, H. Li,* Y. Zhao, J. Kang, Z. Li, Z Liu, X. Yi, J. Li, G Wang, “Excellent ESD Resistance Property of InGaN LEDs With Enhanced Internal Capacitance”, IEEE Photonics Technology Letters, 27, 2004, 2015. (Corresponding author)
34. P. Li, H. Li,* Z. Li, J. Kang, X. Yi, J. Li, G. Wang, “Strong carrier localization effect in carrier dynamics of 585 nm InGaN amber light-emitting diodes”, J. Appl. Phys. 117, 073101, 2015. (Corresponding author)
35. P. Li, H. Li,* L. Wang, X. Yi, G. Wang, “High Quantum Efficiency and Low Droop of 400-nm InGaN Near-ultraviolet light-emitting diodes through suppressed leakage current”, IEEE J. Quantum Electronics 51, 1, 2015. (Corresponding author)
36. Z. Li, J. Kang, B. Wang, H. Li, Y. Hsiang Weng, YC Lee, Z. Liu, X. Yi, G. Wang, “Two distinct carrier localization in green light-emitting diodes with InGaN/GaN multiple quantum wells”, J. Appl. Phys. 115, 083112, 2014.
37. J. Kang, Z. Li, Z. Liu, H. Li, Y. Zhao, Y. Tian, P. Ma, X. Yi, G. Wang, “Investigation of the wet-etching mechanism of Ga-polar AlGaN/GaN micro-pillars,” Journal of Crystal Growth, 386, 175, 2014.
38. H. Li,* P. Li, J. Kang, Z. Li, Z. Li, J. Li, X. Yi, G. Wang, “Phosphor-free, color-tunable monolithic InGaN light-emitting diodes”, Appl. Phys. Express 6, 102103, 2013. (Covered by Semiconductor Today: http://www.semiconductor-today.com/news_items/2013/NOV/CAS_041113.shtml )
39. J. Kang, Z. Li, H. Li, Z. Liu, P. Ma, X. Yi, G. Wang, “Optimal width of quantum well for reversed polarization blue InGaN light-emitting diodes”, AIP Advances 3, 072121, 2013.
40. J. Kang, H. Li, Z. Li, Z. Liu, P. Ma, X. Yi, G. Wang, “Enhancing the performance of green GaN-based light-emitting diodes with graded superlattice AlGaN/GaN inserting layer”, Appl. Phys. Lett. 103, 102104, 2013.
41. H. Li,* P. Li, J. Kang, Z. Li, Y. Zhang, M. Liang, Z. Li, J. Li, X. Yi, G. Wang, “Analysis model for efficiency droop of InGaN light-emitting diodes based on reduced effective volume of active region by carrier localization”, Appl. Phys. Express 6, 092101, 2013.
42. H. Li,* P. Li, J. Kang, Z. Li, Y. Zhang, Z. Li, J. Li, X. Yi, J. Li, G. Wang, “Quantum efficiency enhancement of 530 nm InGaN green light-emitting diodes with shallow quantum well”, Appl. Phys. Express 6, 052102, 2013. (Covered by Semiconductor Today: http://www.semiconductor-today.com/news_items/2013/MAY/GREENLEDS_060513.html)
43. H. Li,* J. Kang, P. Li, J. Ma, H. Wang, M. Liang, Z. Li, J. Li, X. Yi, G. Wang, “Enhanced performance of GaN based light-emitting diodes with a low temperature p-GaN hole injection layer”, Appl. Phys. Lett. 102, 011105, 2013.
44. J. Kang, Z. Li, H. Li, Z. Liu, X. Li, X. Yi, P. Ma, H. Zhu, G. Wang, “Pyramid Array InGaN/GaN Core–Shell Light Emitting Diodes with Homogeneous Multilayer Graphene Electrodes”, Appl. Phys. Express 6, 072102, 2013. (Covered by Semiconductor Today: http://www.semiconductor-today.com/news_items/2013/JUL/CAS_170713.html )