• Papers (as first^ or corresponding* author)

  1. Jai-Youn Jeong^, ..., Changhwan Shin*, and Jae-Hoon Han*, in preparation (2024).

  2. Kyul Ko^, Dae-Hwan Ahn^, ..., Byeong-Kwon Ju*, and Jae-Hoon Han*, "," under revision (2024).

  3. Kyung Yeun Kim, Joohyuk Kang, Sangmin Song, Kyungwoo Lee, Suk-Won Hwang, Seung Hwan Ko, Hojeong Jeon*, Jae-Hoon Han*, and Wonryung Lee*, "," under revision (2024).

  4. Sunghan Jeon^, DaeHwan Ahn^, Kyul Ko, Woo-Young Choi*, and Jae-Hoon Han*, "Responsivity Enhancement of Wafer-bonded In0.53Ga0.47As Photo-FET on Si Substrate via EOT Scaling," accepted to physica status solidi (a) (2024). https://doi.org/10.1002/pssa.202300664

  5. Kyul Ko^, Dae-Hwan Ahn*, Hoyoung Suh, Byeong-Kwon Ju, and Jae-Hoon Han*, "Effects of Al2O3 Interfacial Layer Thickness for HZO/InGaAs Ferroelectric Capacitors with Superior Polarization and MOS Interface Properties," IEEE Transactions on Electron Devices 70, 6237 (2023).

  6. Tae Soo Kim^, Sung-Han Jeon, Kyeol Ko, Dae-Hwan Ahn, Jae-Hoon Han*, Won Jun Choi*, and Ki Jun Yu*, "Fast, Energy-Efficient InGaAs Synaptic Phototransistors on Flexible Substrate," Advanced Electronic Materials 9, 2300437 (2023).

  7. DaeHwan Ahn^, Sunghan Jeon^, Hoyoung Suh, Seungwan Woo, Rafael Jumar Chu, Daehwan Jung, Won Jun Choi, Donghee Park, Jin-Dong Song, Woo-Young Choi, and Jae-Hoon Han*, "High-Responsivity InAs Quantum Well Photo-FET Integrated on Si Substrates for Extended-Range Short-Wave Infrared Photodetector Applications," Photonics Research 11, 1465 (2023). (Editors' pick)

  8. Taewon Jin^, SangHyeon Kim^, Jae-Hoon Han^, Dae-Hwan Ahn, Seong Ui An, Tae Hyeon Noh, Xinkai Sun, Cheol Jun Kim, Juhyuk Park, Younghyun Kim*, "Demonstration of programmable light intensity of a micro-LED with a Hf-based ferroelectric ITZO TFT for Mura-free displays," Nanoscale Advances 5, 1316 (2023).

  9. Song-Hyeon Kuk^, Seungmin Han, Dong Hyun Lee, Bong Ho Kim, Joonsup Shim, Min Hyuk Park, Jae-Hoon Han*, Sang-Hyeon Kim*, "Logic and Memory Ferroelectric Field-Effect-Transistor Using Reversible and Irreversible Domain Wall Polarization," IEEE Electron Device Letters 44, 36 (2023).

  10. Dae-Hwan Ahn^, Suman Hu^, Kyeol Ko, Donghee Park, Hoyoung Suh, Gyu-Tae Kim, Jae-Hoon Han*, Jin-Dong Song*, YeonJoo Jeong*, "Energy-Efficient III–V Tunnel FET-Based Synaptic Device with Enhanced Charge Trapping Ability Utilizing Both Hot Hole and Hot Electron Injections for Analog Neuromorphic Computing," ACS Applied Materials & Interfaces 14, 24592 (2022).

  11. Sooseok Kang^, DaeHwan Ahn, Inho Lee, Won Jun Choi, Jindong Song, Jae-Hoon Han* "A Cavity-Enhanced InGaAs Photo-FET with a Metal Gate Reflector Fabricated by Wafer Bonding on Si," Optics Express 29, 42630 (2021).

  12. Younghyun Kim^, Jae-Hoon Han*, Daehwan Ahn, SangHyeon Kim, "Heterogeneously-Integrated Optical Phase Shifters for Next-Generation Modulators and Switches on a Silicon Photonics Platform: A Review," Micromachines. 12, 625 (2021). 

  13. Pavlo Bidenko^, Jae-Hoon Han^*, Jindong Song, SangHyeon Kim*, "Study on Charge-Enhanced Ferroelectric SIS Optical Phase Shifters Utilizing Negative Capacitance Effect," Journal of Quantum Electronics. 56, 5000110 (2020).

  14.  SangHyeon Kim^*, Jae-Hoon Han^, Jae-Phil Shim, Hyung-jun Kim, Won Jun Choi, “Verification of Ge-on-insulator structure for a mid-infrared photonics platform,” Optics Material Express. 8, 440-451 (2018).

  15. Jae-Hoon Han^*, Frederic Boeuf, Junichi Fujikata, Shigeki Takahashi, Shinichi Takagi, Mitsuru Takenaka*, “Efficient low-loss InGaAsP/Si hybrid MOS optical modulator,” Nature Photonics. 11, 486-490 (2017).

  16. Jae-Hoon Han^*, Mitsuru Takenaka*, Shinichi Takagi, “Analysis of interface trap density of plasma post-nitrided Al2O3/SiGe MOS interface with high Ge content using high-temperature conductance method”, Journal of Applied Physics. 120, 125707 (2016).

  17. Jae-Hoon Han^*, Mitsuru Takenaka*, Shinichi Takagi, “Study on void reduction in direct wafer bonding using Al2O3/HfO2 bonding interface for high-performance Si high-k MOS optical modulators,” Japanese Journal of Applied Physics. 55, 04EC06 (2016).

  18. Jae-Hoon Han^*, Rui Zhang, Takenori Osada, Masahiko Hata, Mitsuru Takenaka*, Shinichi Takagi, “Impact of plasma post-nitridation on HfO2/Al2O3/SiGe gate stacks toward EOT scaling”, Microelectronic Engineering. 109, 266-269 (2013).

  19. Jaehoon Han^*, Rui Zhang, Takenori Osada, Masahiko Hata, Mitsuru Takenaka*, Shinichi Takagi, “Reduction in Interface Trap Density of Al2O3/SiGe Gate Stack by Electron Cyclotron Resonance Plasma Post-nitridation”, Applied Physics Express. 6, 051302 (2013).

• International Conferences

  1. (Oral) S.-H. Kuk^, J.-H. Han*, B. H. Kim, J. P. Kim, S.-H. Kim*, "Strategy for 3D Ferroelectric Transistor: Critical Surface Orientation Dependence of HfZrOx on Si," 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), T5-1, 13 June 2023.

  2. (Oral) K. Ko^, D.-H. Ahn, B.-K. Ju, and J.-H. Han*, "Investigation of Ferroelectric Behaviors in the lnGaAs MFMIS Fe-TFET," Compound Semiconductor Week (CSW) 2023, TuE3-4, 30 May 2023.

  3. (Oral) S.-H. Jeon^, D.-H. Ahn, W.-Y. Choi*, and J.-H. Han*, "Responsivity Enhancement of ln0.53Ga0.47As Photo-FET Fabricated by Wafer Bonding on Si Substrate via Cavity Effect and EOT Scaling," Compound Semiconductor Week (CSW) 2023, WeA4-4, 31 May 2023.

  4. (Poster) T.-Y. Kim, D.-H. Ahn, W. Lee, and J.-H. Han*, "Study on Al2O3, Surface Passivation for Infrared micro-LEDs," Compound Semiconductor Week (CSW) 2023, P1-100, 31 May 2023.

  5. (Oral) J. -H. Han^*, S. -M. Han, D. -H. Ahn, W. -Y. Choi and J. -D. Song, "Capacitance Matching for a Non-volatile Hybrid SIS Optical Phase Shifter with a Ferroelectric Capacitor," International Conference on Group IV Photonics (GFP2021), ThA3, 09 December 2021.

  6. (Poster) S. -M. Han^, D. -W. Rho, D. -H. Ahn, J. -D. Song, W. -Y. Choi and J. -H. Han*, "Non-Volatile Operation of a Si PN Ring Resonator with a Ferroelectric Capacitor," 2021 Optical Fiber Communications Conference and Exhibition (OFC), 2021, pp. 1-3.

  7. (Poster) J.-H. Han^*, H. Kim, WJ Choi, J. Song, and SH Kim*, “Design of Efficient Phase Shifter using InGaAs-InAs/Ge SIS Capacitor for Mid-IR Photonics Application,” International Conference on Group IV Photonics (GFP2018), P11, Cancun, Maxico, 29 August 2018.

  8. (Poster) J.-H. Han^*, P. Bidenko, J. Song, and SH Kim*, “Feasibility Study on Negative Capacitance SIS Phase Shifter for Low-Power Optical Phase Modulation,” International Conference on Group IV Photonics (GFP2018), P12, Cancun, Maxico, 29 August 2018.

  9. (Oral) J.-H. Han^, S. Takagi, and M. Takenaka “High-Efficiency O-Band Mach-Zehnder Modulator based on InGaAsP/Si Hybrid MOS Capacitor,” The Optical Fiber Communication Conference and Exhibition (OFC’17), W3E.2, Los Angeles, 22 May 2017.

  10. (Oral) J.-H. Han^, M. Takenaka, and S. Takagi, “Extremely high modulation efficiency III-V/Si hybrid MOS optical modulator fabricated by direct wafer bonding,” The International Electron Devices Meeting (IEDM’16), 25.5, San Francisco, 7 Dec 2016.

  11. (Oral) J. Han^, M. Takenaka, and S. Takagi, "Improvement in the modulation bandwidth of MOS optical modulators by using p-SiGe slab," Asia Communications and Photonics Conference (ACP 2015), ASu5B.2, Hong Kong, 22 November 2015.

  12. (Oral) J.-H. Han^, M. Takenaka, and S. Takagi, "Comparison of Al2O3/Si1-xGex MOS interfaces grown on p-Si (100) and p-Si (110) with plasma post-nitridation," IEEE Semiconductor Interface Specialists conference (SISC2014), 13.4, San Diego, 13 December 2014.

  13. (Oral) J.-H. Han^, R. Zhang, T. Osada, M. Hata, M. Takenaka, and S. Takagi, “Impact of Ge composition on the interface trap density at Al2O3/Si1-xGex MOS interface with plasma post-nitridation”, 45th IEEE Semiconductor Interface Specialists Conference (SISC), 1 (2013) 3.

  14. (Oral) J.-H. Han^, R. Zhang, T. Osada, M. Hata, M. Takenaka, and S. Takagi, “Impact of plasma post-nitridation on HfO2/Al2O3/SiGe gate stacks toward EOT scaling”, 18th Conference of Insulating Films on Semiconductors (INFOS), 7.3 (2013).

  15. (Oral) J.-H. Han^, R. Zhang, T. Osada, M. Hata, M. Takenaka, and S. Takagi, “Improvement of Al2O3/Si0.75Ge0.25 MOS interface by plasma post-nitridation”, 44th IEEE Semiconductor Interface Specialists Conference (SISC), 7 (2012) 3. 

• Papers (as co-author, visit my Google Scholar)

  1. ‪SK Kim, D.-M. Geum, H.-R. Lim, J.-H. Han, H. Kim, YJ Jeong, SH Kim, "Photo-Responsible Synapse Using Ge Synaptic Transistors and GaAs Photodetectors," ‪IEEE Electron Device Letters. 41, 605-608 (2020).

  2. SK Kim, YJ Jeong, P. Bidenko, H.-R. Lim, Y.-R. Jeon, H. Kim, YJ Lee, D.-M. Geum, J.-H. Han, C. Choi, H Kim, SH Kim, "3D stackable synaptic transistor for 3D integrated artificial neural networks," ACS Applied Materials & Interfaces. 12, 7372-7380 (2020).

  3. SK Kim, D.-M. Geum, H.-R. Lim, H. Kim, J.-H. Han, DK Hwang, JD Song, H. Kim, SH Kim, "‪Improved characteristics of MOS interface between In0.53Ga0.47As and insulator by H2 annealing with Pt gate electrode," Applied Physics Letters. 115, 143502 (2019).

  4. S. Lee, SK Kim, J.-H. Han, JD Song, D.-H. Jun, SH Kim, "Epitaxial lift-off technology for large size III–V-on-insulator substrate," IEEE Electron Device Letters. 40, 1732-1735 (2019).

  5. H.-R. Lim, SK Kim, J.-H. Han, H. Kim, D.-M. Geum, Y.-J. Lee, B.-K. Ju, H. Kim, SH Kim, "Impact of Bottom-Gate Biasing on Implant-Free Junctionless Ge-on-Insulator n-MOSFETs," IEEE Electron Device Letters. 40, 1362-1365 (2019).

  6. SH Kim, SK Kim, S. Shin, J.-H. Han, D.-M. Geum, J.-P. Shim, S. Lee, H. Kim, G. Ju, JD Song, M. A. Alam, H. Kim, "Highly stable self-aligned Ni-InGaAs and non-self-aligned Mo contact for monolithic 3-D integration of InGaAs MOSFETs," IEEE Journal of the Electron Devices Society. 7, 869-877 (2019).

  7. M. Takenaka, J.-H. Han, F. Boeuf, J.-K. Park, Q. Li, C. P. Ho, D. Lyu, S. Ohno, J. Fujikata, S. Takahashi, and S. Takagi, “III-V/Si Hybrid MOS Optical Phase Shifter for Si Photonic Integrated Circuits,” Journal of Lightwave Technology. 37, 1474-1483 (2019).

  8. D.-M. Geum, SK Kim, C.-M. Kang, S.-H. Moon, J. Kyhm, J.-H. Han, D.-S. Lee, SH Kim, "Strategy toward the fabrication of ultrahigh-resolution micro-LED displays by bonding-interface-engineered vertical stacking and surface passivation," Nanoscale. 11, 23139-23148 (2019).

  9. SH Kim, J.-H. Han, W. J. Choi, J. D. Song, and HJ Kim, “Functionalized Bonding Materials and Interfaces for Heterogeneously Layer-Stacked Applications,” Journal of the Korean Physical Society. 74, 82 (2019).

  10. Q. Li, J.-H. Han, C. P. Ho, S. Takagi, and M. Takenaka, “Ultra-power-efficient 2×2 Si Mach-Zehnder interferometer optical switch based on III-V/Si hybrid MOS phase shifter,” Optics Express. 26, 35003 (2018).

  11.  J.-P. Shim, H.-S. Kim, G. Ju, H.-R. Lim, S. K. Kim, J.-H. Han, H. Kim, S.-H. Kim, “Low-Temperature Material Stacking of Ultrathin Body Ge (110)-on-Insulator Structure via Wafer Bonding and Epitaxial Liftoff From III–V Templates,” IEEE Transactions on Electron Devices. 65, 1253-1257 (2018).

  12. J. Fujikata, M. Noguchi, Y. Kim, J. Han, S. Takahashi, T. Nakamura, M. Takenaka, “High-speed and highly efficient Si optical modulator with strained SiGe layer,” Applied Physics Express. 11, 032201 (2018).

  13. P. Bidenko, S. Lee, J.-H. Han, J. D. Song, SH Kim, “Simulation Study on the Design of Sub-kT/q Non-Hysteretic Negative Capacitance FET Using Capacitance Matching,” IEEE Journal of the Electron Devices Society. 6, 910 (2018).

  14. S.-H Kim, S.-K. Kim, J.-P. Shim, D.-M. Geum, G. Ju, H. S. Kim, H. J. Lim, H. R. Lim, J.-H. Han, S. Lee, H.-S. Kim, P. Bidenko, C. M. Kang, D. S. Lee, J. D. Song, W. J. Choi, H. Kim, “Heterogeneous Integration toward a Monolithic 3D Chip Enabled by III-V and Ge Materials,” IEEE Journal of the Electron Devices Society. 6, 579 (2018).

  15. F. Boeuf, J.-H. Han, S. Takagi, M. Takenaka, “Benchmarking Si, SiGe, and III–V/Si Hybrid SIS Optical Modulators for Datacenter Applications,” Journal of Lightwave Technology. 35, 4047-4055 (2017).

  16. N. Sekine, J.-H. Han, S. Takagi, M. Takenaka, “Numerical analysis of carrier-depletion InGaAsP optical modulator with lateral PN junction formed on III–V-on-insulator wafer,” Japanese Journal of Applied Physics. 56, 04CH09 (2017).

  17. M. Takenaka, Y. Kim, J. Han, J. Kang, Y. Ikku, Y. Cheng, J. Park, M. Yoshida, S. Takashima, S. Takagi, “Heterogeneous CMOS Photonics Based on SiGe/Ge and III–V Semiconductors Integrated on Si Platform,” IEEE Journal of Selected Topics in Quantum Electronics. 23, 64-76 (2017).

  18. M. Takenaka, Y. Kim, J. Han, J. Kang, and S. Takagi, “Challenges and opportunities of near and mid-infrared photonics based on SiGe and Ge,” ECS Transactions. 75, 447-459 (2016).

  19. J.-K. Park, J. Han, M. Takenaka, and S. Takagi, “InGaAsP variable optical attenuator with lateral P-I-N junction formed by Ni-InGaAsP and Zn diffusion on III-V on insulator wafer,” MRS Advances. 1, 3295-3300 (2016).

  20. S. Takagi, C. Y. Chang, M. Yokoyama, K. Nishi, R. Chang, M. Ke, J.-H. Han, and M. Takenaka, "MOS interface control technologies for advanced III-V/Ge devices," ECS Transactions. 69, 37-51 (2015).

  21. N. Yoshida, E. Waki, M. Arai, K. Yamasaki, J.-H. Han, M. Takenaka, and S. Takagi, “Extraction of interface state density at SiO2/SiC interfaces based on impedance measurements with different temperatures”, Thin Solid Films. 557, 237-240, (2014).

  22. Y. Kim, J. Han, M. Takenaka, and S. Takagi, “Low temperature Al2O3 surface passivation for carrier-injection SiGe optical modulator”, Optics Express. 22, 7458-7464 (2014). 

• Patents

  1. Method of producing semiconductor wafer, semiconductor wafer, method of producing semiconductor device and semiconductor device, US9117658 (2015).

  2. (Applying, Japan) ＭＯＳ型光変調器及びその製造方法、特願２０１６－１６０２２９

  3. (Korea) 중적외선 광 위상 변조기 및 이의 제조방법, 10-1944272

  4. (Applying, Korea) 중적외선을 이용한 반도체 칩간 광통신 기술, 2018-0039807

  5. (Applying, Korea) 강유전체 물질을 이용하는 광 위상 변환기 및 광 스위치 소자, 2018-0090707

^ Co-first authors

* Corresponding author(s)